Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Performance Specifications at 3.5 V, 850 MHz: Output Power = 31 dBm Min Power Gain = 11 dB Typ Efficiency = 70% Min • Guaranteed Ruggedness at Load VSWR = 20:1 • New Plastic Surface Mount Package • Available in Tape and Reel Packaging Options: T1 suffix = 1,000 Units per Reel • Device Marking = 9822 CASE 449–02, STYLE 1 (PLD–1) MAXIMUM RATINGS Rating Symbol Value Unit VDGO 12 Vdc VGS –6 Vdc Drain Current – Continuous ID 3 Adc Total Device Dissipation @ TC = 50°C Derate above 50°C PD 10 100 W mW/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 150 °C Symbol Max Unit RθJC 10 °C/W Drain–Gate Voltage Gate–Source Voltage Operating Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain–Gate Breakdown Voltage (ID = 1.5 mA) BVGDO 12 – – Vdc Off–state Leakage Current (VDS = 5.5 V, VGS = –2. 6 V) IDS(off) – – 3 mA Gate–Source Leakage Current (VGS = –2. 6 V) IGSS – – 10 µAdc OFF CHARACTERISTICS NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF9822T1 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VGS(th) – 1.5 – – 0.5 Vdc gfs – 1.5 – mhos IDSS 1.8 2.5 – A Power Gain (VDD = 3.5 Vdc, Pin = 20 dBm, IDQ = 150 mA, f = 850 MHz) Gps 10.5 11 – dB Drain Efficiency (VDD = 3.5 Vdc, Pin = 20 dBm, IDQ = 150 mA, f = 850 MHz) ηD 65 70 – % ON CHARACTERISTICS Gate Threshold Voltage (VDS = 3.5 V, ID = 150 mA) Forward Transconductance (VDS = 6 V, ID = 200 mA) Saturation Drain–Current (VGS = 0.0 V, VDS = 1.5 V) FUNCTIONAL CHARACTERISTICS L1 L3 L4 Vgate C7 C6 C8 C9 C10 C11 R1 C12 L2 OUTPUT C1 Z4 INPUT Z5 DUT Z1 C2 Z2 Z6 C4 C5 C13 Z3 C3 0.75″ x 0.65″ CERAMIC SUBSTRATE C1, C13 C2 C3 C4 C5 C6, C12 C7, C8, C9, C10, C11 L1, L4 1000 pF, ATC “B” Series 2.7 pF, ATC “B” Series 2.7 pF, ATC “B” Series 7.5 pF, ATC “B” Series 33 pF, ATC “B” Series 47 µF, Ceramic 0.05 µF Chip VK–200 4 Turn Ferrite Bead L2 7 Turns, AWG #18, 0.09″ I.D., Close Wound L3 3 Ferrite Beads on 1/2″ AWG #16 R1 680 Ω, 1/8 Watt Leaded Z1 0.075″ x 0.790″ Microstrip Z2 0.075″ x 0.09″ Microstrip Z3, Z4 0.075″ x 0.25″ Microstrip Z5 0.075″ x 0.09″ Microstrip Z6 0.075″ x 0.53″ Microstrip Substrate Material: 0.05, Teflon/Glass, εr = 2.55, 2 oz. cu. Figure 1. 850 MHz Test Fixture Schematic Table 1. Large Signal Impedance VDD = 3.5 V, Pin = 20 dBm, IDQ = 150 mA f MHz Zin Ohms ZOL* Ohms 850 5.0 – j6.3 5.5 – j1.2 Z OL * is the conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. MRF9822T1 2 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS C L A S P 1 R B 4 3 N ÉÉ ÉÉ 2 Q K D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M E T G ÉÉ ÉÉÉÉ ÉÉ ÉÉÉÉ ÉÉ W 8 PL H Y X DRAFT 4 PL 2 PL J 8 PL ÉÉ ÉÉ Z AA RESIN BLEED/FLASH ALLOWABLE CASE 449–02 ISSUE A MOTOROLA RF DEVICE DATA ZONE U ZONE V F 2 PL DIM A B C D E F G H J K L M N P Q R S T U V W X Y Z AA INCHES MIN MAX 0.185 0.195 0.175 0.185 0.058 0.064 0.017 0.023 0.014 0.017 0.027 0.033 0.071 0.077 0.017 0.023 0.000 0.007 0.018 0.026 0.253 0.263 5 _REF 1.75 REF 0.000 0.006 0.120 0.130 0.220 0.230 0.030 0.038 0.050 0.060 0.000 0.018 0.000 0.014 0.004 0.016 0.131 0.141 0.065 0.075 0.089 0.099 0.056 0.066 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 4.70 4.95 4.44 4.70 1.47 1.63 0.43 0.58 0.36 0.43 0.69 0.84 1.80 1.96 0.43 0.58 0.00 0.18 0.46 0.66 6.43 6.68 5 _REF 4.44 REF 0.00 0.15 3.05 3.30 5.59 5.84 0.76 0.97 1.27 1.52 0.00 0.46 0.00 0.36 0.10 0.41 3.33 3.58 1.65 1.90 2.26 2.51 1.42 1.67 DRAIN GATE SOURCE SOURCE MRF9822T1 3 Motorola reserves the right to make changes without further notice to any products herein. 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