ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances 1.0 GHz, 85 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 375B–04, STYLE 1 NI–860 ARCHIVED 2005 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ±20 Vdc Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.45 Watts W/°C Symbol Max Unit RθJC 0.7 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 – – Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS – – 1 µAdc Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS – – 1 µAdc OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 1 mAdc) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF185 1 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VGS(Q) 3 4 5 Vdc Delta Quiescent Voltage between sides (VDS = 26 V, ID = 300 mA per side) ∆VGS(Q) – 0.15 0.3 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 3 A per side) VDS(on) – 0.75 1 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A per side) gfs 1.6 2 – s Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Coss – 38 – pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Crss – 4.6 6 pF Common Source Power Gain (VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA) Gps 11 14 – dB Drain Efficiency (VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA) η 45 53 – % ON CHARACTERISTICS Gate Quiescent Voltage (VDS = 26 V, ID = 300 mA per side) DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS Ψ No Degradation in Output Power ARCHIVED 2005 Load Mismatch (VDD = 28 Vdc, Pout = 85 W, f = 960 MHz, IDQ = 600 mA, Load VSWR 5:1 at All Phase Angles) MRF185 2 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 PACKAGE DIMENSIONS 2X A A Q ((( !" # # $ %! & ! % 4 G B L 1 2 B (FLANGE) 5 3 4X K 4X 4 D ((( ''' R ''' N C (LID) E F (LID) H S (INSULATOR) ((( M PIN 5 (INSULATOR) T SEATING PLANE CASE 375B–04 ISSUE E NI–860 INCHES MIN MAX ! MILLIMETERS MIN MAX $ ARCHIVED 2005 ((( DIM A B C D E F G H K L M N Q R S bbb ccc MOTOROLA RF DEVICE DATA MRF185 3 Archived 2005 ARCHIVED 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF185 4 ◊ MOTOROLA RF DEVICE DATA MRF185/D Archived 2005