Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55% (Typical) 2.0 W, to 500 MHz TMOS BROADBAND RF POWER FET • Grounded Source Package for High Gain and Excellent Heat Dissipation (MRF158R) • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Excellent Thermal Stability, Ideally Suited for Class A Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. D G CASE 305A–01, STYLE 2 S MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc VGS ±40 Vdc Drain Current — Continuous ID 0.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 8.0 45 Watts mW/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 13.2 °C/W Gate–Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF158 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 0.5 mAdc Gate–Source Leakage Current (VGS = 40 V, VDS = 0) IGSS — — 1.0 µAdc VGS(th) 1.0 4.0 6.0 Vdc gfs 50 85 — mmhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss — 3.0 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss — 4.2 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss — 0.45 — pF Common Source Power Gain (VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA) Gps 16 20 — dB Drain Efficiency (Figure 1) (VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA) η 45 55 — % Electrical Ruggedness (Figure 1) (VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA, VSWR 30:1 at all Phase Angles) ψ OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 5.0 mA) ON CHARACTERISTICS Gate Threshold Voltage (ID = 10 mA, VDS = 10 V) Forward Transconductance (VDS = 10 V, ID = 100 mA) DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS (Figure 1) No Degradation in Output Power Series Equivalent Input Impedance (VDD = 28 V, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA) Zin — 8.8 – j27.37 — Ohms Series Equivalent Output Impedance (VDD = 28 V, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA) Zout — 16.96 – j62 — Ohms MRF158 2 MOTOROLA RF DEVICE DATA D1 C10 R4 RFC1 C11 R3 C8 VDD 28 V + + C9 C12 VDC – RFC2 R2 C7 RF INPUT Z1 C2 Z5 R1 Z6 L2 Z2 Z3 C3 L3 C4 L1 RF OUTPUT Z8 Z7 C6 C5 Z4 C1 D.U.T. C1, C4, C5 — Johanson Trimmer Capacitor, 2 – 20 pF C2, C6 — 270 pF Chip Capacitor C3 — Arco 404 C7, C8, C9 — 0.1 µF C10, C11 — 680 pF Feed Through C12 — 50 µF, 50 V 0.245″ D1 — 1N5925A Motorola Zener L1 — #18 AWG, Hairpin 0.825″ long, bend into hairpin L2 — #18 AWG, Hairpin 0.875″ long, bend into hairpin 0.240″ L3 — #18 AWG, Hairpin 0.965″ long, bend into hairpin L1 0.330″ 0.390″ L2 Board Material — 0.062″, Teflon Fiberglass, 2 oz., Copper clad both sides, ∈r = 2.55 R1 — 91 Ω 1/2 Watt R2 — 10 kΩ 1/2 Watt R3 — 10 kΩ, 10 Turns Bourns R4 — 1.8 k 1.4 Watt RFC1 — Ferroxcube VK200–19/4B RFC2 — 10 Turns #20 AWG Enameled, 0.250″ ID Z1 — Microstrip Line 0.150″ wide, 0.420″ long Z2 — Microstrip Line 0.150″ wide, 0.420″ long Z3 — Microstrip Line 0.150″ wide, 0.475″ long Z4 — Microstrip Line 0.150″ wide, 0.825″ long Z5 — Microstrip Line 0.150″ wide, 0.750″ long Z6 — Microstrip Line 0.150″ wide, 0.500″ long Z7 — Microstrip Line 0.150″ wide, 0.500″ long Z8 — Microstrip Line 0.150″ wide, 0.450″ long 0.235″ 0.475″ L3 Figure 1. 400 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF158 3 TYPICAL CHARACTERISTICS 1 5 Coss 2 Ciss ID , DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 10 0.1 1 Crss 0.5 VGS = 0 V f = 1 MHz 0.2 0.1 0.01 0 5 10 15 20 VDS,DRAIN–SOURCE VOLTAGE (VOLTS) 25 1 Figure 2. Capacitance versus Drain–Source Voltage Figure 3. DC Safe Operating Area 3.2 2.8 f = 400 MHz Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 3.2 2.4 500 MHz 2 1.6 1.2 VDS = 28 V IDQ = 100 mA 0.8 0.4 0 100 10 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 20 40 60 Pin, INPUT POWER (mW) 80 100 Pin = 80 mW 2.8 2.4 50 mW 2 1.6 20 mW 1.2 f = 400 MHz IDQ = 100 mA 0.8 0.4 0 10 12 Figure 4. Output Power versus Input Power 14 18 22 26 16 20 24 VDS, DRAIN–SOURCE VOLTAGE (VOLTS)) 28 30 Figure 5. Output Power versus Voltage Table 1. Typical Common Emitter S–Parameters S11 S21 S12 S22 VDS (Volts) ID (mA) f (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 28 100 5 10 30 50 100 200 300 400 500 600 700 800 900 1000 1.00 1.00 1.00 1.00 0.98 0.93 0.88 0.83 0.79 0.75 0.73 0.72 0.71 0.71 – 2.0 – 2.0 – 7.0 –11 – 21 – 41 – 58 – 75 – 87 – 99 –110 –120 –130 –139 3.84 3.81 3.74 3.72 3.62 3.28 2.88 2.57 2.24 1.94 1.72 1.52 1.35 1.18 –179 179 174 170 159 137 120 104 91 78 68 58 48 40 0.003 0.004 0.011 0.018 0.034 0.061 0.077 0.088 0.090 0.084 0.077 0.067 0.055 0.043 73 83 81 78 70 52 39 27 17 8.0 2.0 – 3.0 – 6.0 – 4.0 0.97 0.97 0.97 0.96 0.95 0.90 0.86 0.81 0.78 0.75 0.75 0.75 0.74 0.73 – 2.0 – 2.0 – 6.0 – 9.0 –19 – 35 – 50 – 63 – 74 – 84 – 93 – 99 –108 –114 MRF158 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS M D K DIM A C D F H J K M 4 1 3 2 F J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 2: PIN 1. 2. 3. 4. A C INCHES MIN MAX 0.200 0.220 0.095 0.130 0.055 0.065 0.025 0.035 0.040 0.050 0.003 0.007 0.435 ––– 45 _REF MILLIMETERS MIN MAX 5.08 5.59 2.41 3.30 1.40 1.65 0.64 0.89 1.02 1.27 0.08 0.18 11.05 ––– 45 _REF SOURCE GATE SOURCE DRAIN H CASE 305A–01 ISSUE A MOTOROLA RF DEVICE DATA MRF158 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF158 6 ◊ *MRF158/D* MRF158/D MOTOROLA RF DEVICE DATA