Order this document by BCW33LT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 1 BASE 3 1 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 20 Vdc Collector – Base Voltage VCBO 30 Vdc Emitter – Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Collector Current — Continuous 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING BCW33LT1 = D3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 32 — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CBO 32 — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc — — 100 10 nAdc µAdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) 0.062 in. 0.024 in. 99.5% alumina. ICBO 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 BCW33LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 420 800 — 0.25 0.55 0.70 Cobo — 4.0 pF NF — 10 dB ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) — hFE Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) VCE(sat) Base – Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V + 3.0 V 10 < t1 < 500 µs DUTY CYCLE = 2% t1 +10.9 V 10 k – 0.5 V <1.0 ns 275 10 k 0 CS < 4.0 pF* – 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* *Total shunt capacitance of test jig and connectors Figure 1. Turn–On Time 2 Figure 2. Turn–Off Time Motorola Small–Signal Transistors, FETs and Diodes Device Data BCW33LT1 TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 20 100 BANDWIDTH = 1.0 Hz RS = 0 50 300 µA 10 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 100 µA 7.0 5.0 10 µA 3.0 20 300 µA 100 µA 10 5.0 2.0 1.0 30 µA 0.5 30 µA BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 10 µA 0.2 2.0 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 10 k 20 50 Figure 3. Noise Voltage 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k Figure 4. Noise Current NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) BANDWIDTH = 1.0 Hz 200 k 100 k 50 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500 k 20 k 10 k 5k 2.0 dB 2k 1k 500 3.0 dB 4.0 dB 6.0 dB 10 dB 200 100 50 1M 500 k BANDWIDTH = 1.0 Hz 200 k 100 k 50 k 20 k 10 k 1.0 dB 5k 2.0 dB 2k 1k 500 5.0 dB 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k 8.0 dB 10 20 Figure 5. Narrow Band, 100 Hz 500 k RS , SOURCE RESISTANCE (OHMS) 3.0 dB 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k Figure 6. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200 k 100 k 50 k ǒ Noise Figure is defined as: 20 k 10 k 5k NF 1.0 dB 2k 1k 500 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 en2 Ǔ ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 2.0 dB 200 100 50 + 20 log10 1k IC, COLLECTOR CURRENT (µA) Figure 7. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 BCW33LT1 100 1.0 BCW33LT1 TJ = 25°C 0.8 IC = 1.0 mA 0.6 10 mA 50 mA IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 200 µA 40 100 µA 20 0 5.0 10 0 20 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages 4 40 Figure 9. Collector Characteristics 1.4 0.1 400 µA 60 Figure 8. Collector Saturation Region 0.8 IB = 500 µA 50 100 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 25°C to 125°C 0 *qVC for VCE(sat) – 55°C to 25°C – 0.8 25°C to 125°C – 1.6 qVB for VBE – 2.4 0.1 0.2 – 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 Figure 11. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data 100 BCW33LT1 TYPICAL DYNAMIC CHARACTERISTICS 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 700 500 ts 300 200 t, TIME (ns) t, TIME (ns) 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 20 3.0 1.0 2.0 20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA) 50 70 10 1.0 100 2.0 3.0 50 70 100 Figure 13. Turn–Off Time 500 10 TJ = 25°C f = 100 MHz TJ = 25°C f = 1.0 MHz 7.0 300 200 C, CAPACITANCE (pF) VCE = 20 V 5.0 V 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz) Figure 12. Turn–On Time 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 14. Current–Gain — Bandwidth Product Figure 15. Capacitance 1.0 0.7 0.5 10 20 50 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19A 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 16. Thermal Response Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 BCW33LT1 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 Vdc 103 102 ICEO 101 ICBO AND ICEX @ VBE(off) = 3.0 Vdc 100 10–1 10–2 –4 0 –2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) A train of periodical power pulses can be represented by the model as shown in Figure 16A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 16 was calculated for various duty cycles. To find Z θJA(t), multiply the value obtained from Figure 16 by the steady state value RθJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569. Figure 16A. 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data BCW33LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 BCW33LT1 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 G C H D K J CASE 318–08 ISSUE AE SOT–23 (TO–236AB) DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data BCW33LT1/D