Order this document by MMBT3904LT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 200 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance Junction to Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Collector Current — Continuous CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT3904LT1 = 1AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 — Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL — 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX — 50 nAdc Characteristic OFF CHARACTERISTICS 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. v v Thermal Clad is a registered trademark of the Berquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MMBT3904LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 40 70 100 60 30 — — 300 — — — — 0.2 0.3 0.65 — 0.85 0.95 fT 300 — MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 8.0 pF Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 k ohms Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10– 4 Small – Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 — Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mmhos Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) NF — 5.0 dB (VCC = 3.0 Vdc, VBE = – 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) td — 35 tr — 35 (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts — 200 tf — 50 ON CHARACTERISTICS(3) DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) HFE Collector – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width 2 v 300 ms, Duty Cycle v 2.0%. ns ns Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT3904LT1 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms 275 t1 DUTY CYCLE = 2% +3 V +10.9 V 275 10 k 10 k 0 – 0.5 V CS < 4 pF* < 1 ns CS < 4 pF* 1N916 – 9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) VCC = 40 V IC/IB = 10 3000 7.0 Cibo 3.0 Cobo 2.0 1000 700 500 QT 300 200 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 3 MMBT3904LT1 500 500 IC/IB = 10 100 70 tr @ VCC = 3.0 V 50 30 20 VCC = 40 V IC/IB = 10 300 200 t r, RISE TIME (ns) TIME (ns) 300 200 40 V 100 70 50 30 20 15 V 10 7 5 10 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn – On Time Figure 6. Rise Time IC/IB = 10 200 500 t′s = ts – 1/8 tf IB1 = IB2 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 t f , FALL TIME (ns) t s′ , STORAGE TIME (ns) IC/IB = 20 200 IC, COLLECTOR CURRENT (mA) 500 300 200 7 5 100 70 IC/IB = 20 50 IC/IB = 10 30 20 100 70 50 10 10 7 5 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 2 0 0.1 4 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 W IC = 1.0 mA IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 4.0 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Figure 10. 40 Motorola Small–Signal Transistors, FETs and Diodes Device Data 100 MMBT3904LT1 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE (m mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 11. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 5.0 10 Figure 12. Output Admittance 20 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 – 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 15. DC Current Gain Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3904LT1 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25°C VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 – 55°C TO +25°C – 0.5 – 55°C TO +25°C – 1.0 +25°C TO +125°C qVB FOR VBE(sat) – 1.5 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 1.0 1.0 6 2.0 5.0 10 20 50 100 200 – 2.0 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 180 200 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT3904LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 MMBT3904LT1 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 DIM A B C D G H J K L S V G C H D K J CASE 318–08 ISSUE AE SOT–23 (TO–236AB) INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT3904LT1/D