PHILIPS BLV958FL

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV958; BLV958FL
UHF power transistors
Product specification
Supersedes data of 1997 Oct 15
2000 Jan 12
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
FEATURES
DESCRIPTION
• Internal input and output matching for easy matching,
high gain and efficiency
NPN silicon planar epitaxial transistors primarily intended
for common emitter class-AB operation. The transistors
have internal input and output matching by means of MOS
capacitors. The encapsulations are a 2-lead rectangular
SOT391A flange package and a SOT391B flangeless
package, both with a ceramic cap.
• Poly-silicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Base stations in the 800 to 960 MHz frequency range.
PINNING - SOT391A
PIN
PINNING - SOT391B
SYMBOL
PIN
DESCRIPTION
SYMBOL
DESCRIPTION
1
c
collector
1
c
collector
2
b
base
2
b
base
3
e
emitter; connected to flange
Ground plane
e
emitter
c
handbook, halfpage 1
c
handbook, halfpage 1
b
b
3
2
MAM203
2
e
Top view
MSA465
e
Top view
Fig.1 Simplified outline (SOT391A) and symbol.
Fig.2 Simplified outline (SOT391B) and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
CW, class-AB
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
900
26
75
≥8
≥50
960
26
75
≥8.5
≥50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2000 Jan 12
2
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
70
V
VCEO
collector-emitter voltage
open base
−
30
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
15
A
IC(AV)
average collector current
−
15
A
Ptot
total power dissipation
−
250
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
Tmb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
thermal resistance from junction to
mounting base
Rth mb-h
thermal resistance from mounting base
to heatsink
CONDITIONS
Ptot = 250 W; Tmb = 25 °C;
note 1
Note
1. Thermal resistance is determined under specified RF operating conditions.
2000 Jan 12
3
VALUE
UNIT
0.7
K/W
0.2
K/W
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 60 mA
70
−
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 150 mA
30
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 3 mA
3
−
−
V
ICES
collector leakage current
VBE = 0; VCE = 28 V
−
−
5
mA
hFE
DC current gain
VCE = 10 V; IC = 4.5 A; note 1;
see Fig 3
30
−
120
Cc
collector capacitance
VCB = 26 V; IE = ie = 0;
f = 1 MHz; note 2; see Fig 4
−
75
−
pF
Notes
1. Measured under pulsed conditions: tp ≤ 500 µs; δ ≤ 0.01.
2. Value of Cc is that of the die only, it is not measurable because of internal matching network.
MLD243
120
MLD244
200
handbook, halfpage
handbook, halfpage
h FE
Cc
(pF)
(1)
150
80
(2)
100
40
50
0
0
4
8
12
0
16
I C (A)
0
10
20
30
VCB (V)
40
Measured under pulsed conditions; tp ≤ 500 µs; δ ≤ 0.01.
(1) VCE = 26 V.
(2) VCE = 10 V.
Value Cc is that of the die only, it is not measurable because of
internal matching network.
IE = ie = 0; f = 1 MHz.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
2000 Jan 12
4
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter, class-AB test circuit; Rth mb-h = 0.2 K/W.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
900
26
200
75
≥8
typ. 9.5
≥50
typ. 55
960
26
200
75
≥8.5
typ. 9.5
≥50
typ. 55
CW, class-AB
Ruggedness in class-AB operation
The transistors are capable of withstanding a load mismatch corresponding to VSWR = 4 : 1 through all phases at rated
output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 200 mA; Th = 25 °C; Rth mb-h = 0.2 K/W.
MLD245
12
handbook, halfpage
Gp
Gp
(dB)
8
MLD246
60
120
handbook, halfpage
ηC
(%)
PL
(W)
40
80
20
40
ηC
4
0
0
20
40
60
0
80
100
P L (W)
0
0
4
8
VCE = 26 V; ICQ = 200 mA; f = 960 MHz.
VCE = 26 V; ICQ = 200 mA; f = 960 MHz.
Fig.5
Fig.6
Power gain and collector efficiency as
functions of load power; typical values.
2000 Jan 12
5
12
P i (W)
16
Load power as a function of input power;
typical values.
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
handbook, full pagewidth
L5
+Vbias
C9
R1
C4
C5
C6
C7
R2
C8
L6
C11
L7
C13
C14
L1
L2
L4
L9
C16
C12
L10
DUT
C2
+VS
C15
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,
L3
input
50 Ω
L8
C10
C19
L11
C1
L12
output
50 Ω
C20
C18
C3
C17
MBH109
C21
Fig.7 Class-AB test circuit at f = 960 MHz.
List of components (see Figs 7 and 8)
COMPONENT
DESCRIPTION
VALUE
C1, C20
Tekelec, type 5201
0.8 to 10 pF
C2, C19
multilayer ceramic chip
capacitor; note 1
15 pF; 500 V
C3
multilayer ceramic chip
capacitor; note 1
6.2 pF; 500 V
C4
electrolytic capacitor
10 µF; 63 V
C5
multilayer ceramic chip
capacitor
22 nF; 50 V
C6
multilayer ceramic chip
capacitor; note 1
1 nF; 500 V
C7
multilayer ceramic chip
capacitor; note 1
33 pF; 500 V
C8, C11, C14
multilayer ceramic chip
capacitor; note 1
100 pF; 500 V
C9, C10, C13
multilayer ceramic chip
capacitor; note 1
20 pF; 500 V
C12
solid tantalum capacitor
1 µF; 35 V
C15
multilayer ceramic chip
capacitor
100 nF; 50 V
C16
electrolytic capacitor
47 µF; 40 V
2000 Jan 12
6
DIMENSIONS
CATALOGUE No.
2222 030 28109
2222 036 68479
Philips Semiconductors
Product specification
UHF power transistors
COMPONENT
BLV958; BLV958FL
DESCRIPTION
VALUE
DIMENSIONS
C17
multilayer ceramic chip
capacitor; note 1
4.7 pF; 500 V
C18
multilayer ceramic chip
capacitor; note 1
3.3 pF; 500 V
C21
multilayer ceramic chip
capacitor; note 1
2.7 pF; 500 V
L1
stripline; note 2
length 51 mm
width 2.2 mm
L2
stripline; note 2
length 7 mm
width 2.2 mm
L3
stripline; note 2
length 5.5 mm
width 20 mm
L4
stripline; note 2
length 9 mm
width 20 mm
L5, L8
Ferroxcube chip-bead
grade 4S2
L6
5 turns enamelled 1 mm
copper wire
int. diameter 4 mm
close wound
L7
4 turns enamelled 1 mm
copper wire
int. diameter 4 mm
close wound
L9
stripline; note 2
length 12.5 mm
width 20 mm
L10
stripline; note 2
length 2 mm
width 20 mm
L11
stripline; note 2
length 17 mm
width 2.2 mm
L12
stripline; note 2
length 41 mm
width 2.2 mm
R1, R2
metal film resistor
CATALOGUE No.
4330 030 36300
100 Ω; 0.4 W
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on double-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2.25); thickness 1⁄32 inch.
2000 Jan 12
7
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
75
handbook, full pagewidth
75
70
70
C12
C5
C4
C6
C7
R1
C9
C8
L6
+Vbias
L1
L5
L3
C10
L10 L7
L9
L4
L8
L11
L2
C15
C13
R2
C11
C16
C14
+VS
L12
C19
C2
C18
C20
C17
C3
C1
C21
MBH110
The same printed-circuit board can also be used for the flangeless version FL.
Dimensions in mm.
The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Component layout and printed-circuit board for 960 MHz class-AB test circuit.
2000 Jan 12
8
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
MLD252
MLD249
6
5
handbook, halfpage
handbook, halfpage
ZL
(Ω)
Zi
(Ω)
4
4
RL
2
xi
3
0
2
XL
2
ri
1
4
0
800
850
900
950
6
800
1000
1050
f (MHz)
850
900
950
1000
1050
f (MHz)
VCE = 26 V; ICQ = 200 mA; PL = 75 W;
Th = 25 °C; Rth mb-h = 0.2 K/W.
VCE = 26 V; ICQ = 200 mA; PL = 75 W;
Th = 25 °C; Rth mb-h = 0.2 K/W.
Fig.9
Fig.10 Load impedance as a function of frequency
(series components); typical values.
Input impedance as a function of frequency
(series components); typical values.
MLD253
12
handbook, halfpage
Gp
(dB)
8
handbook, halfpage
Zi
4
ZL
0
800
850
900
950
MBA451
1000
1050
f (MHz)
VCE = 26 V; ICQ = 200 mA; PL = 75 W;
Th = 25 °C; Rth mb-h = 0.2 K/W.
Fig.11 Power gain as a function of frequency;
typical values.
2000 Jan 12
Fig.12 Definition of transistor impedance.
9
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
PACKAGE OUTLINES
Flanged ceramic package; 2 mounting holes; 2 leads
SOT391A
D
A
F
3
D1
U1
B
q
c
C
1
H
p
U2
A
2
E1
E
w1 M A M B M
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
5.21
4.45
5.84
5.59
0.15
0.10
inches
D
D1
E1
E
10.87 10.92 10.26 10.29
10.67 10.67 10.06 10.03
F
H
p
Q
q
U1
U2
w1
w2
1.65
1.40
15.75
14.73
3.43
3.18
2.29
2.03
20.32
22.99
22.73
9.91
9.65
0.25
0.51
0.135 0.090
0.125 0.080
0.800
0.905
0.895
0.390
0.010 0.020
0.380
0.205 0.230 0.006 0.428 0.430 0.404 0.405 0.065 0.620
0.175 0.220 0.004 0.420 0.420 0.396 0.395 0.055 0.580
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-29
99-12-08
SOT391A
2000 Jan 12
EUROPEAN
PROJECTION
10
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
Flangeless ceramic package; 2 leads
SOT391B
D
A
c
1
L
0
5
10 mm
scale
E
L
2
b
OUTLINE
VERSION
DIMENSIONS (millimetre dimensions are derived
from the original inch dimensions)
UNIT
A
b
c
mm
4.09
3.02
5.85
5.58
0.16
0.10
D
E
11.54 10.93
10.51 9.90
L
Q
2.79
2.29
1.02
0.76
Q
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
SOT391B
ISSUE DATE
97-05-29
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Jan 12
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 69
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/04/pp12
Date of release: 2000
Jan 12
Document order number:
9397 750 06671