Order this document by MGSF1N02ELT1/D SEMICONDUCTOR TECHNICAL DATA $ ! " # !""# ! Part of the GreenLine Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Motorola Preferred Device N–CHANNEL LOGIC LEVEL ENHANCEMENT–MODE TMOS MOSFET 3 3 DRAIN 1 2 CASE 318–08, Style 21 SOT–23 (TO–236AB) • Low rDS(on) Provides Higher Efficiency and Extends Battery Life 1 GATE • Miniature SOT–23 Surface Mount Package Saves Board Space 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDSS 20 Vdc Gate–to–Source Voltage — Continuous VGS ± 8.0 Vdc Drain Current — Continuous @ TA = 25°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) ID IDM 750 2000 mA Drain–to–Source Voltage Total Power Dissipation @ TA = 25°C PD 400 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction–to–Ambient RθJA 300 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds ORDERING INFORMATION Device Reel Size Tape Width Quantity MGSF1N02ELT1 7″ 8mm embossed tape 3000 MGSF1N02ELT3 13″ 8mm embossed tape 10,000 GreenLine is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Transistors, FETs and Diodes Device Data Motorola, Small–Signal Inc. 1998 1 MGSF1N02ELT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 — — Vdc — — — — 1.0 10 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µA) µAdc Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Source Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) IGSS — — ± 0.1 µAdc Gate–Source Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 0.5 — 1.0 Vdc Static Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 1.0 A) (VGS = 2.5 Vdc, ID = 0.75 A) rDS(on) — — — — 0.085 0.115 ON CHARACTERISTICS(1) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Ciss — 160 — Output Capacitance (VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Coss — 130 — pF Transfer Capacitance (VDG = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Crss — 60 — td(on) — 6.0 — tr — 26 — td(off) — 117 — tf — 105 — QT — 6500 — pC IS — — 0.6 A Pulsed Current ISM — — 0.75 Forward Voltage(2) (VGS = 0 Vdc, IS = 0.6 Adc) VSD — — 1.2 SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time ((VDD = 5 Vd Vdc,, ID = 1.0 1 0 Adc, Ad , RL = 5 Ω, RG = 6 Ω) Fall Time Total Gate Charge (VDS = 16 Vdc, ID = 1.2 Adc, VGS = 4.0 Vdc) ns SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current V (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 2.5 2 2.5 V 2 ID, DRAIN CURRENT (AMPS) ID , DRAIN CURRENT (AMPS) 1.8 TJ = 150°C 1.5 25°C – 55°C 1 0.5 2.25 V 1.6 1.75 V 2.0 V 1.4 1.5 V 1.2 1 0.8 0.6 VGS = 1.25 V 0.4 0.2 0 0 0.5 0.8 1.1 1.4 1.7 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics 2 2.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 2. On–Region Characteristics Motorola Small–Signal Transistors, FETs and Diodes Device Data 0.2 VGS = 2.5 V 0.18 TJ = 150°C 0.16 0.14 0.12 25°C 0.1 – 55°C 0.08 0.06 0.04 0.02 0 0 0.2 0.6 0.4 0.8 1 1.4 1.2 1.8 1.6 2 RDS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) MGSF1N02ELT1 0.14 VGS = 4.5 V TJ = 150°C 0.12 0.1 0.08 25°C 0.06 – 55°C 0.04 0.02 0 0 0.2 0.6 0.4 ID, DRAIN CURRENT (AMPS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) 1.6 VGS = 4.5 V ID = 1.2 A 1.4 VGS = 2.5 V ID = 1.0 A 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 – 50 1.2 1.4 1.8 2 5 VDS = 16 V TJ = 25°C 4 3 2 ID = 1.2 A 1 0 –25 0 25 50 75 100 125 150 6000 4000 2000 0 TJ, JUNCTION TEMPERATURE (°C) 8000 10000 QT, TOTAL GATE CHARGE (pC) Figure 6. Gate Charge Figure 5. On–Resistance Variation Over Temperature 500 1 450 TJ = 150°C 25°C f = 1 MHz TJ = 25°C 400 – 55°C C, CAPACITANCE (pF) ID, DIODE CURRENT (AMPS) 1.6 Figure 4. On–Resistance versus Drain Current Figure 3. On–Resistance versus Drain Current 1.5 1 0.8 ID, DRAIN CURRENT (AMPS) 0.1 0.01 350 300 250 200 Ciss Coss 150 100 Crss 50 0.001 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 8. Capacitance Variation 3 MGSF1N02ELT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 416 milliwatts. PD = 150°C – 25°C 300°C/W = 416 milliwatts The 300°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 416 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 4 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data MGSF1N02ELT1 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 DIM A B C D G H J K L S V G C D H K J CASE 318–08 ISSUE AE SOT–23 (TO–236AB) INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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This device has a class 1 ESD rating. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: [email protected] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ Motorola Small–Signal Transistors, ◊FETs and Diodes Device Data MGSF1N02ELT1/D 5