WIRELESS COMMUNICATIONS DIVISION TQ5131 RF IN VDD GND LO IN DATA SHEET 3V Cellular Band CDMA/AMPS RFA/Mixer IC Mode Select/ LO Input IFA Gain Select GIC CDMA IF IF Out Out IF Out AMP's IF Out Features Small size: SOT23-8 Single 3V operation Product Description Low-current operation The TQ5131 is a 3V, RFA/Mixer IC designed specifically for Cellular band CDMA/AMPS applications. It’s RF performance meets the requirements of products designed to the IS-95 and AMPS standards. The TQ5131 is designed to be used with the TQ3131 (CDMA/AMPS LNA) which provides a complete CDMA receiver for 800MHz dual-mode phones. Gain Select The RFA/Mixer incorporates on-chip switches which determine CDMA, AMPS and bypass mode select. When used with the TQ3131 (CDMA/AMPS LNA), four gain steps are available. The RF input port is internally matched to 50 Ω, greatly simplifying the design and keeping the number of external components to a minimum. The TQ5131 achieves good RF performance with low current consumption, supporting long standby times in portable applications. Coupled with the very small SOT23-8 package, the part is ideally suited for Cellular band mobile phones. Electrical Specifications1 Parameter Min Typ Max Units 881 MHz Gain 15.0 dB Noise Figure 4.5 dB 3rd 2.5 dBm 15.0 mA Order Intercept DC supply Current High IP3 performance Few external components Applications IS-95 CDMA Mobile Phones AMPS Mobile Phones Frequency Input Mode Select Dual Mode CDMA Cellular application Note 1: Test Conditions: Vdd=2.8V, RF=881MHz, LO=966MHz, IF=85MHz, Ta=25C, CDMA High Gain state. For additional information and latest specifications, see our website: www.triquint.com 1 TQ5131 Data Sheet Electrical Characteristics Parameter Conditions Min. Typ/Nom Max. Units RF Frequency Cellular band 869 881 894 MHz IF Frequency Range High side LO 85 130 MHz CDMA Mode-High Gain Gain 13.0 Noise Figure 15.0 4.5 Input IP3 0 Supply Current dB 5.5 2.5 15.0 dB dBm 18.0 mA CDMA Mode-High Gain Low Linearity Gain 14.0 17.0 dB Noise Figure 4.5 5.5 dB Input IP3 -1.0 dBm Supply Current 15.0 mA 3.5 dB Noise Figure 11.0 dB Input IP3 13.5 dBm Supply Current 10.5 mA 7.0 dB Noise Figure 10.0 dB Input IP3 10.0 dBm Supply Current 10.5 mA 12.0 dB CDMA Mode-Mid Gain Gain 1.0 CDMA Mode-Low Gain Gain 5.0 AMPS Mode Gain 9.5 Noise Figure 5.0 Input IP3 -5.0 Supply Current -3.0 9.0 Supply Voltage 6.0 2.8 dB dBm 12.5 mA V Note 1: Test Conditions: Vdd=2.8V, RF=881MHz, LO=966MHz, IF=85MHz, TC = 25° C, Min/Max limits are at +25°C case temperature, unless otherwise specified. Absolute Maximum Ratings Parameter Value Units DC Power Supply 5.0 V Power Dissipation 500 mW Operating Temperature -40 to 85 C Storage Temperature -60 to 150 C Signal level on inputs/outputs +20 dBm Voltage to any non supply pin +0.3 V 2 For additional information and latest specifications, see our website: www.triquint.com TQ5131 Data Sheet Typical Performance, Note: HG Mode=CDMA High Gain, LG Mode=CDMA Low Gain Test Conditions, unless otherwise specified: Vdd=2.8V, Ta=25C, RF=881MHz, LO=966MHz, IF=85MHz, LO input=-4dBm Gain vs. Frequency Idd vs. Frequency 18 16 12 Idd (mA) Gain (dB) 14 10 8 6 HG Mode LG Mode AMPS Mode 4 2 869 875 882 888 16 15 14 13 12 11 10 9 8 7 6 HG Mode LG Mode AMPS Mode 869 894 875 Input IP3 vs. Frequency 888 894 Gain vs. Temperature 18 12 16 10 HG Mode 8 14 LG Mode 6 Gain (dB) Input IP3 (dBm) 882 Frequency (MHz) Frequency (MHz) AMPS Mode 4 2 12 HG Mode LG Mode AMPS Mode 10 8 0 6 -2 4 -4 869 875 882 888 -30 894 0 Frequency (MHz) 25 55 85 Temperature (Celsius) Noise Figure vs. Frequency Input IP3 vs. Temperature 11 12 9 9 8 HG Mode LG Mode AMPS Mode 7 6 Input IP3 (dBm) Noise Figure (dB) 10 5 4 3 HG Mode LG Mode AMPS Mode 6 3 0 -3 2 869 875 882 Frequency (MHz) 888 894 -6 -30 0 25 55 85 Temperature (Celsius) For additional information and latest specifications, see our website: www.triquint.com 3 TQ5131 Data Sheet Input IP3 vs. LO Power Noise Figure vs. Temperature 12 10 10 8 8 6 Input IP3 (dBm) Noise Figure (dB) 12 6 4 HG Mode LG Mode AMPS Mode 2 HG Mode LG Mode AMPS Mode 4 2 0 -2 -4 0 -6 -30 0 25 55 85 -8 -6 Temperature (Celsius) Idd vs. Temperature 10 14 9 Noise Figure (dB) Idd (mA) 0 11 16 12 10 8 HG Mode LG Mode AMPS Mode 6 8 HG Mode LG Mode AMPS Mode 7 6 5 4 3 4 2 -30 0 25 55 85 -8 Temperature (Celsius) 18 16 16 14 14 Gain (dB) 12 10 8 -2 0 12 HG Mode LG Mode AMPS Mode 10 8 HG Mode LG Mode AMPS Mode 4 -4 Gain vs. Vdd 18 6 -6 LO Power (dBm) Gain vs. LO Power Gain (dB) -2 Noise Figure vs. LO Power 18 6 2 4 -8 -6 -4 -2 0 2.6 LO Power (dBm) 4 -4 LO Power (dBm) For additional information and latest specifications, see our website: www.triquint.com 2.8 3 Vdd (volts) 3.2 TQ5131 Data Sheet Input IP3 vs. Vdd 12 10 Input IP3 (dBm) 8 HG Mode LG Mode AMPS Mode 6 4 2 0 -2 -4 -6 2.6 2.8 3 3.2 Vdd (volts) Noise Figure vs. Vdd 11 Noise Figure (dB) 10 9 8 HG Mode LG Mode AMPS Mode 7 6 5 4 3 2 2.6 2.8 3 3.2 Vdd (volts) Idd vs. Vdd 18 16 Idd (mA) 14 12 10 8 HG Mode LG Mode AMPS Mode 6 4 2.6 2.8 3 3.2 Vdd (volts) For additional information and latest specifications, see our website: www.triquint.com 5 TQ5131 Data Sheet Control 2 RF AMP Gain Select Control 1 Mixer Mode Select R1 L4 RF IN VDD GND LO IN RF input VDD R4 C22 R2 Control 3 IF AMP Gain Select GIC C4 R3 CDMA IF Out C6 C7 IF Out LO INPUT C12 IF Out C9 AMP's IF Out L3 L2 C10 VDD VDD C8 C5 Application/Test Circuit Bill of Material for TQ5131 RF AMP/Mixer Component Reference Designator Part Number Receiver IC U1 TQ5131 Capacitor C4 .022µF 0402 Capacitor C10 18pF 0402 Capacitor C5,C8 1200pF 0402 Capacitor C6,C7 27pF 0402 Capacitor C9 12pF 0402 Capacitor C12 100pF 0402 Capacitor C22 2.7pF 0402 Resistor R1, R4 5.1K Ω 0402 Resistor R2 8.2 Ω 0402 Resistor R3 82Ω 0402 Inductor L2 180nH 0805 Inductor L3 270nH 0805 Inductor L4 18nH 0402 6 Value For additional information and latest specifications, see our website: www.triquint.com Size Manufacturer SOT23-8 TriQuint Semiconductor TQ5131 Data Sheet following source impedance z = 1.86 + j2.41 Ω(normalized to 50 TQ5131 Product Description The TQ5131 is a miniature low noise mixer (downconverter) in a small SOT-23-8 package (2.9X2.8X1.14 mm) with operation at 2.8v. It is designed for cellular CDMA applications and dualmode CDMA/AMPS mobile phones. The IC features excellent linearity with an input intercept point of +2.5dBm in its high gain mode and +10.0dBm in its low gain mode. It has a typical noise figure of 4.5 dB for CDMA and 5.0 for AMPS mode. For optimum performance the TQ5131 RF frequency of operation should be from 869 to 894 MHz. The IF range is from 85 to 130 Ω). 1.0 0.5 2.0 A Source Impedance 0.68 @ 30.2 z = 1.86 + j 2.41 y = 0.20 - j 0.26 A 0.5 1.0 2.0 Input Impedance (High Gain) MHz and its injection mode for the local oscillator is high side. B Operation 0.75 @ -63.1 z = 0.5 - j 1.51 y = 0.20 + j 0.60 B -2.0 -0.5 The TQ5131 is a single-ended mixer with switching capabilities for the various signal levels found in CDMA applications. It consists of a RF amplifier, followed by a single-ended mixer driven by a grounded gate LO buffer amplifier. The mixer output can be directed either to the CDMA IF amplifier or the AMPS IF amplifier via a switch. Pin 1 and 7 are used to control the RF amplifier gain select and the mixer mode select respectively. TQ5131 RF / C2 1 8 GND 2 7 LO / C1 GIC 3 6 IFA GS/C3 CDMA IF 4 5 AMPS IF Mx Vdd -1.0 Figure 2. RFA Input and Source Impedance LO Buffer Amplifier The on-chip LO buffer amplifier is a grounded gate FET. The capacitor also serves as a DC block to the control voltage. The TQ5131 has internal LO tuning. This eases the work of the RF system designer and eliminates the need for the external tank circuit (inductor and capacitor) that would otherwise be needed to tune the frequency response of the LO buffer. The LO is limited to high-side injection mode and it operates from 950MHz to 1030MHz. The input to the LO buffer is through pin 7 which also feeds the control line (C1) that selects the mixer mode of Figure 1. TQ5131 Block Diagram operation, either CDMA or AMPS. Due to this logic control, the only external component required at the LO port is a series capacitor to prevent DC from traveling to other parts of the system. The LO drive level of operation should be between -7 Detailed Circuit Description: RF Amplifier and 0 dBm. Best performance is obtained between –6 and –2 dbm. The TQ5131 has an integrated pre-amplifier stage in a cascode configuration. The output is internally matched to 50 ohms at 881MHz. Pin 1 requires an external match that is set to deliver a 2:1 VSWR in both the low and high gain modes (i.e. RFA is on or off). Figure 2 shows an approximated impedance at pin 1 (RFA input) to implement any desired match. The TQ5131 performance in TriQuint’s demo board was achieved using the LO/filter/Mixer interaction The physical position of the image reject filter is likely to have an effect on the performance of the mixer especially in the Low Gain mode where the RF amplifier is switched out. This is primarily due to self-mixing of the LO energy bouncing from the filter back into the mixer either out-of-phase or in-phase creating an offset in magnitude. To minimize this effect, TriQuint For additional information and latest specifications, see our website: www.triquint.com 7 TQ5131 Data Sheet recommends placing the image-reject filter as close to the IC as possible. In TriQuint’s demo board its position is 42 mils from Performance Vs. Bias Resistance (R3) for CDMA High Gain: (RF_Freq=882MHz, IF_Freq=85MHz, LO_Freq=967MHz, PLO=-4dBm, Vdd=2.8) the pad of the matching inductor and 126 mils from the IC pad. This location for the image-reject filter works well. 17 CDMA IF Amplifier 12 The CDMA IF amplifier is an open drain stage with a gain step to adjust the output power levels according to the system requirement. The source of the CDMA IF amplifier is connected directly to pin 3. This allows the system designer to adjust gain, output intercept and current (GIC) by adding an external selfbias circuit at this pin (see figure 4a and b). Recommended capacitor value in the self-bias circuit is 0.022 uF or greater. In addition to the 0.5 to 1 dB more of input intercept obtained by using a large value capacitor, the effects of low frequency components present at this pin are also reduced. Figure 4a. GIC Pin Self-Bias Circuit 7 Idd (mA) 2 R2 R3 C4 8 2 7 3 6 4 5 C4 = 0.022uF R2 = 8.2 Ω R3 = 82 Ω Note: These values were optimized for TriQuint's 5131 Demo board. The discrepancy between these values and those of the customer's application may differ due to board and component parasitics. IIP3 (dBm) -3 82 100 130 160 180 200 220 240 270 300 Bias Resistance R3 (ohms): (R2 constant at 8.2 ohms) Figure 4b. Performance Vs. GIC Pin Bias Resistance, R3 AC degeneration of the CDMA IFA source has minimum or no effect on AMPS performance. Maximum gain is obtained when the total DC resistance (R2 + R3) at pin 3 is bypassed (see figure 4c). TQ5131 1 Gain (dB) Performance Vs. Bias Resistance (R2) for CDMA High Gain: (RF_Freq=882MHz, IF_Freq=85MHz, LO_Freeq=967MHz, PLO=-4dBm, Vdd=2.8) 18 16 14 12 10 8 6 4 2 0 Gain (dB) IIP3 (dBm) Idd (mA) 0 10 20 30 39 51 62 Bias Resistance R2 (ohms): (R3 constant at 82 ohms) Figure 4c. Performance Vs. GIC Pin Bias Resistance, R2 Once the operating point is chosen, the designer still has flexibility to adjust gain and intercept by varying the ratio of the total bias resistance, R2 + R3. In figure 4d one can observe how gain and intercept change while the current remains approximately constant at 16mA. 8 For additional information and latest specifications, see our website: www.triquint.com TQ5131 Data Sheet Performance Vs. RBias Ratio (R2/R3) for CDMA High Gain: (RF_Freq=882MHz, IF_Freq=85MHz, LO_Freeq=967MHz, PLO=-4dBm, Vdd=2.8) 20 15 Idd (mA) IIP3 (dBm) 5 After designing the IF match in simulation using the given S- 0 8.2/82 18/68 27/62 39/51 R2/R3 (ohms): (Total Rbias ~ 90 ohms) Figure 4d. Performance Vs. R2/R3 Ratio, Idd = 16mA Similarly, figure 4e shows gain and input intercept variation while the current is fixed at 12mA. Performance Vs. RBias Ratio (R2/R3) for CDMA High Gain: (RF_Freq=882MHz, IF_Freq=85MHz, LO_Freq=967MHz, PLO=-4dBm, Vdd=2.8) 16 14 12 10 8 6 4 2 0 -2 the IF output. When designing the PCB, it is recommended to place the self bias circuit of the amplifier as close to the pin as possible to minimize possible loading effects that might cause an oscillation. Also the shunt capacitor of the IF match should be grounded close to the IC (see figure 4c). Gain (dB) 10 selected before implementing the output match. Significant changes on this bias resistance might require a new match at parameters, some adjustment might be needed when implementing the match on the bench. At this point remember that the mixer FET must be turned on since the IFA is directly coupled to it. Also make sure that the LO buffer amplifier is providing the proper drive level and that any unused ports are properly terminated. Figure 4 shows the circuit topology and component values designed for TriQuint's demo board. Verify that the match has a 2:1 VSWR in all modes. Figure 5 shows a typical CDMA IF output impedance. Figure 4c. CDMA IF Output Match (IF = 85MHz) TQ5131 Gain (dB) Idd (mA) IIP3 (dBm) 1 8 2 7 3 6 4 5 C6=27pF CDMA IF C7=27pF 0/188.2 8.2/180 27/160 56/130 L2=180nH R2/R3 (ohms) GIC pin: (Totol Rbias ~ 190 ohms) Figure 4e. Performance Vs. R2/R3 Ratio, Idd = 12.4mA The normalized impedance at the CDMA IF output is z = 5.0 – j 2.24 Ω. There are several methods of measuring the port Vdd Note: These values were optimized for TriQuint's 5131 Demo board. The discrepancy between these values and those of the customer's application may differ due to board and component parasitics. Figure 5. CDMA Output Impedance at Pin 4 impedance of a device, this particular measurement was taken on the 5131 demo board by lifting pin 4 of the PCB pad and soldering the tip of a semirigid probe next to it. Care must be exercised when grounding the outer conductor of the semirigid probe. For the measurement to be valid the probe must be grounded very close to the pin. Before soldering the probe, its electrical length must be calculated and dialed in the network analyzer's port extension in order to move the calibration reference plane right at the tip of the probe. Keep in mind that 1.0 0.5 2.0 D CDIF output Impedance 0.72 @ -8.8 z = 5.0 - j 2.24 y = 0.17 + j 0.07 0.5 1.0 2.0 D the total DC bias resistance at the IF amplifier source must be -2.0 -0.5 -1.0 For additional information and latest specifications, see our website: www.triquint.com 9 TQ5131 Data Sheet AMPS IF Amplifier Vdd Decoupling This amplifier also uses an open drain stage with a self-bias External spurious signals at high and low frequencies can circuit. No Quiescent current adjustments are possible in this mode since the bias circuit is on-chip. While the IF output can be tuned for frequencies as high as 500 MHz, the appear on the Vdd lines. Proper decoupling of these lines is required to eliminate unwanted noise. The recommended decoupling network has a PI configuration. On the main Vdd downconverter performance is limited by the internal tuned circuit of the LO buffer amplifier. The highest IF that can be used without significant deviation from typical performance is 130 node, a large capacitor of 0.022 uF is use, followed by a 3.3 or 10 ohm resistor in series with the supply line, then another bypass cap that presents a low impedance to ground at the RF MHz. This output is a high impedance open drain FET z = 5.42 frequency of interest. The Vdd, pin 8, is bypassed on chip. – j 9.04 Ω (normalized). The match requires a RF choke to Vdd Therefore, all that is needed is a series 3.3 to 10Ω resistor to for proper biasing (see figure 6). Typical AMPS IF output impedance is shown in figure 7. the large capacitor, 0.022µFd. Figure 6. AMPS IF Output Match (IF = 85 MHz) All ground pins should be kept close to the IC and have its own via to the ground plane to minimize inductance. TQ5131 1 8 2 7 3 6 4 5 Board Layout Recommendations Most PC boards for portable applications have thin dielectric AMPS IF C9=12pF layers and very narrow line width which increase the board parasitic capacitance and inductance. To minimize these effects when implementing a matching network, it is recommended to relieve the ground underneath pads carrying RF signals whenever possible. C10=18pF L3=270nH Vdd Note: These values were optimized for TriQuint's 5131 Demo board. The discrepancy between these values and those of the customer's application may differ due to board and component parasitics. 1.0 0.5 E 2.0 AMIF output Impedance 0.91 @ - 9.3 z = 5.42 - j 9.04 y = 0.05 + j 0.08 0.5 1.0 2.0 E Control Line Description The control lines can be toggled between high and low levels using CMOS logic circuitry. Control line C1 is used to switch between CDMA and AMPS IF output. The other two control lines C2 and C3, which are also tied to the LNA gain select and LNA mode respectively, set the various CDMA output levels required by the system. Receiver State C1 C2 C3 AMPS Mode 0 0 1 CDMA High Gain 1 0 0 CDMA HG, low lin 1 0 1 CDMA Mid Gain 1 1 0 CDMA Low Gain 1 1 1 -2.0 -0.5 -1.0 Figure 7. AMPS Output Impedance at Pin 5 Table 1. Downconverter Control Bits 10 For additional information and latest specifications, see our website: www.triquint.com TQ5131 Data Sheet C1 = Mixer Mode, C2 = RFA gain select and LNA gain select , C3 = IFA gain select and LNA mode select. Receiver State RF AMP IF AMP AMPS Mode HG, AMPS Idd HG, AMPS Output CDMA High Gain HG, CDMA Idd LG, CDMA Output CDMA HG, low lin HG, CDMA Idd HG, CDMA Output CDMA Mid Gain Bypass LG, CDMA Output CDMA Low Gain Bypass HG, CDMA Output Table 2. Electrical States of RFA and IFA Rx SYSTEM PERFORMANCE When measuring the mixer alone you will find that the low gain mode has a higher gain than the mid gain mode. These two modes describe the whole system (LNA + Mixer) spec rather than just the mixer. The difference between CDMA High-Gain (HG) and CDMA High-Gain-Low-Linearity (HGLL) is the input intercept of the LNA. In HG the LNA input intercept is +8dBm and so can withstand crossmodulation while transmitting. The HGLL mode is intended for standby phone operation where no transmission is taking place. MODE IDD GAIN NF IIP3 (mA) (dB) (dB) (dBm) AMPS 14 21.5 2.3 -13 High Gain 27.8 26 1.74 -8.9 HGLL 20.9 27.2 2.08 -10.6 Mid Gain 23 14.9 3.54 2 Low Gain 12.7 3.4 14.12 17.2 Table 3. TQ3131_5131 System Performance For additional information and latest specifications, see our website: www.triquint.com 11 TQ5131 Data Sheet Package Pinout RF IN VDD GND LO IN IFA Gain Select GIC CDMA IF IF Out Out IF Out Pin Descriptions Pin Name Pin # RF IN 1 RF Input, RF amplifier gain select, Logic Control 2 GND 2 Ground, paddle GIC 3 Off chip tuning for gain/IP3/current IF OUT 4 CDMA IF Output IF OUT 5 AMPS IF Output IFA Gain 6 IF amplifier gain select, Logic Control 3 LO IN 7 LO Input, mode select (CDMA/AMPS), Logic Control 1 Vdd 8 LNA Vdd, typical 2.8V 12 Mode Select/ LO Input Description and Usage For additional information and latest specifications, see our website: www.triquint.com AMP's IF Out TQ5131 Data Sheet Package Type: SOT23-8 Plastic Package Note 1 PIN 1 E E1 b FUSED LEAD Note 2 A c e DESIGNATION A A1 b c D e E E1 L Theta A1 DESCRIPTION OVERALL HEIGHT STANDOFF LEAD WIDTH LEAD THICKNESS PACKAGE LENGTH LEAD PITCH LEAD TIP SPAN PACKAGE WIDTH FOOT LENGTH FOOT ANGLE DIE L METRIC 1.20 +/-.25 mm .100 +/-.05 mm .365 mm TYP .127 mm TYP 2.90 +/-.10 mm .65 mm TYP 2.80 +/-.20 mm 1.60 +/-.10 mm .45 +/-.10 mm 1.5 +/-1.5 DEG θ ENGLISH 0.05 +/-.250 in .004 +/-.002 in .014 in .005 in .114 +/-.004 in .026 in .110 +/-.008 in .063 +/-.004 in .018 +/-.004 in 1.5 +/-1.5 DEG NOTE 3 3 3 3 1,3 3 3 2,3 3 Notes 1. The package length dimension includes allowance for mold mismatch and flashing. 2. The package width dimension includes allowance for mold mismatch and flashing. 3. Primary dimensions are in metric millimeters. The English equivalents are calculated and subject to rounding error. For additional information and latest specifications, see our website: www.triquint.com 13 TQ5131 Data Sheet Additional Information For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: (503) 615-9000 Email: [email protected] Fax: (503) 615-8900 For technical questions and additional information on specific applications: Email: [email protected] The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright © 1998 TriQuint Semiconductor, Inc. All rights reserved. Revision A, March 10, 2000 14 For additional information and latest specifications, see our website: www.triquint.com