RB420D Diodes Schottky barrier diode RB420D !External dimensions (Units : mm) 2.9±0.2 1.9±0.2 !Features 1) Small surface mounting type. (SMD3) 2) Low IR. (IR=50nA Typ.) 3) High reliability 1.1 0.95 0.95 !Construction Silicon epitaxial planar 2.8±0.2 +0.2 −0.1 0.8±0.1 1.6 D3B 0.4 0~0.1 +0.1 −0.05 0.15 +0.1 −0.06 (All leads have the same dimensions) ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Circuit !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Peak reverse voltage Parameter VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A IFSM 1 A Peak forward surge current∗ Junction temperature Tj 125 ˚C Storage temperature Tstg −40∼+125 ˚C ∗ 60Hz for 1 !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit VF − − 0.45 V Forward voltage Conditions IF=10mA Reverse current IR − − 1 µA VR=10V Capacitance between terminals CT − 6.0 − pF VR=10V, f=1MHz Note) ESD sensitive product handling required. +0.2 −0.1 0.3∼0.6 !Applications Low power rectification RB420D Diodes !Electrical characteristic curves (Ta=25°C) REVERSE CURRENT : IR (A) Ta =1 25 ˚C 75 ˚C 25 ˚C −2 5˚C FORWARD CURRENT : IO (A) 100m 10m 1m 100µ 10µ 0 0.1 0.2 0.3 0.4 0.5 0.6 100µ Ta=125˚C 10µ 75˚C 1µ 25˚C 100n 10n 0 0.7 CAPACITANCE BETWEEN TERMINALS : CT (pF) 1m 1 5 15 20 25 30 PULSE WIDTH P=50% 0 100µ 1m 10m 100m 1 Io CURRENT (%) SURGE CURRENT : I surge (A) 10 5 2 0 0 2 4 6 8 10 12 Fig.3 Capacitance between terminals characteristics 80 60 40 20 0 0 10 Fig.2 Reverse characteristics 100 I surge 20 REVERSE VOLTAGE : VR (V) Ta=25˚C 20 35 50 REVERSE VOLTAGE : VR (V) FORWARD VOLTAGE : VF (V) Fig.1 Forward characteristics 10 100 25 50 75 100 125 PULSE WIDTH (sec) AMBIENT TEMPERATURE : Ta (˚C) Fig.4 Surge current characteristics Fig.5 Derating curve (mounting on glass epoxy PCBs) 14