PHILIPS LTE42012R

DISCRETE SEMICONDUCTORS
DATA SHEET
LTE42012R
NPN microwave power transistor
Product specification
Supersedes data of June 1992
1997 Feb 21
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42012R
FEATURES
PINNING - SOT440A
• Interdigitated structure provides high emitter efficiency
PIN
DESCRIPTION
• Diffused emitter ballasting resistor provides excellent
current sharing and withstanding a high VSWR
1
collector
• Gold metallization realizes very stable characteristics
and excellent lifetime
2
base
3
emitter connected to flange
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Input matching cell improves input impedance and
allows an easier design of wideband circuits.
1
olumns
c
APPLICATIONS
b
• Common emitter class-A power amplifiers up to 4.2 GHz
in CW conditions for military and professional
applications.
3
2
e
MAM131
Top view
DESCRIPTION
Marking code: 198
NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class-A selective amplifier.
MODE OF OPERATION
Class-A (CW)
f
(GHz)
VCE
(V)
IC
(mA)
PL1
(W)
Gpo
(dB)
Zi
(Ω)
ZL
(Ω)
4.2
16
400
≥1
≥6
7.5 + j12
4 − j8
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 21
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42012R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCER
collector-emitter voltage
RBE = 70 Ω
−
20
V
VCEO
collector-emitter voltage
open base
−
16
V
IC
collector current (DC)
−
800
mA
Ptot
total power dissipation
Tmb ≤ 75 °C
−
8
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
at 0.1 mm from ceramic;
t ≤ 10 s
MGL006
1
MGD973
10
handbook, halfpage
handbook,
Ptot
(W)
8
IC
(A)
(1)
6
(2)
10−1
4
2
10−2
1
10 16
VCE (V)
0
102
0
50
100
150
200
Tmb (°C)
Tmb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 70 Ω.
Fig.2 DC SOAR.
1997 Feb 21
Fig.3
3
Power derating curve.
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42012R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
Tj = 75 °C
10
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink
Tj = 75 °C; note 1
0.7
K/W
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
VCB = 20 V; IE = 0
−
−
200
µA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
−
−
600
nA
hFE
DC current gain
VCE = 5 V; IC = 400 mA
15
−
100
Ccb
collector-base capacitance
VCB = 16 V; VEB = 1.5 V;
IE = IC = 0; f = 1 MHz
−
3
−
pF
Cce
collector-emitter capacitance
VCE = 16 V; VEB = 1.5 V;
IE = IC = 0; f = 1 MHz
−
1.5
−
pF
Ceb
emitter-base capacitance
VCB = 10 V; VEB = 1 V;
IC = IE = 0; f = 1 MHz
−
28
−
pF
1997 Feb 21
4
Philips Semiconductors
Product specification
NPN microwave power transistor
Table 1
f
(MHz)
LTE42012R
Common-emitter scattering parameters: VCE = 16 V; IC = 400 mA; Tmb = 25 °C; Zo = 50 Ω; typical values.
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
2000
0.84
163
0.049
64
0.96
47.2
0.60
179.3
2100
0.84
161
0.051
62.7
0.94
43.3
0.59
178.0
2200
0.84
159
0.054
60.4
0.93
39.8
0.59
175.6
2300
0.85
158
0.055
58.8
0.91
36.2
0.59
174.2
2400
0.85
156
0.057
57.5
0.91
32.2
0.60
172.6
2500
0.85
155
0.060
56.1
0.90
29.1
0.60
171.1
2600
0.85
154
0.064
54.9
0.89
24.6
0.60
169.8
2700
0.85
153
0.067
53.1
0.89
21.2
0.60
168.6
2800
0.85
152
0.071
51.3
0.89
17.2
0.61
167.1
2900
0.84
150
0.073
49.5
0.90
13.8
0.62
165.7
3000
0.83
149
0.076
48.0
0.90
9.3
0.62
164.7
3100
0.82
149
0.080
46.0
0.91
5.2
0.63
163.8
3200
0.80
147
0.084
44.1
0.92
0.6
0.64
163.0
3300
0.78
146
0.088
40.5
0.93
−4.3
0.65
161.5
3400
0.76
145
0.091
36.1
0.95
−9.7
0.67
160.9
3500
0.74
144
0.093
34.4
0.97
−16.1
0.69
159.6
3600
0.71
143
0.095
30.7
0.98
−23.2
0.70
158.3
3700
0.70
142
0.095
26.3
0.99
−30.6
0.73
156.2
3800
0.67
142
0.093
21.6
0.99
−37.9
0.76
153.6
3900
0.66
142
0.091
17.0
1.00
−46.6
0.79
150.7
4000
0.64
142
0.088
13.2
0.98
−55.8
0.82
147.0
4100
0.64
142
0.084
9.7
0.95
−64.9
0.85
143.1
4200
0.65
143
0.077
7.0
0.91
−73.8
0.88
138.4
4300
0.67
143
0.068
5.9
0.86
−82.6
0.90
133.6
4400
0.69
143
0.060
8.2
0.81
−92.3
0.93
129.3
4500
0.72
141
0.054
13.8
0.74
−101.7
0.94
124.9
4600
0.75
139
0.050
20.5
0.68
−110.6
0.95
120.1
4700
0.76
137
0.050
31.2
0.61
−119.7
0.96
116.5
4800
0.78
135
0.054
43.5
0.56
−129.1
0.97
113.5
4900
0.79
133
0.061
46.6
0.50
−139.5
0.97
110.1
5000
0.77
130
0.068
54.3
0.44
−148.6
0.97
106.7
1997 Feb 21
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42012R
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class-A selective circuit; note 1.
MODE OF OPERATION
Class-A
f
(GHz)
VCE
(V)
IC
(mA)
PL1
(W)
Gpo
(dB)
Zi
(Ω)
ZL
(Ω)
4.2
16
400
>1
typ. 1.25
>6
typ. 7
7.5 + j12
4 − j8
Note
1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
handbook, full pagewidth
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,, ,,,,,,,,
2.2 2.5 2
2.5
6
1.5
1
6
2.5
2
5.5 8.5
12.8
11.2
6
6
11.3
30
30
MSA102
Dimensions in mm.
Input striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.54); thickness: 0.8 mm.
Fig.4 Prematching test circuit board.
1997 Feb 21
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42012R
MGL013
1.6
MGL059
10
handbook, halfpage
handbook, halfpage
PL
(W)
PL1
Gpo
(1)
1.2
1.5
PL1
(W)
(dB)
PL1
8
1
Gpo
0.8
6
0.5
0.4
4
200
0
0
0.1
0.2
0.3
Pi (W)
0.4
f = 4.2 GHz; VCE = 16 V; IC = 400 mA (regulated).
(1) Gpo = 7 dB.
400
500
IC (mA)
0
600
f = 4.2 GHz; VCE = 16 V.
Fig.6
Fig.5 Load power as a function of input power.
1997 Feb 21
300
7
Low level power gain associated with
PL1 as a function of collector current.
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42012R
PACKAGE OUTLINE
0.1
handbook, full pagewidth
3.45
2.90
1.7 max
4.5
max
3
20.5 max
seating plane
0.25 M
1.0
1
4.5
min
O 0.25 M
3.2
2.9
5.1
3.4
(1)
2
2.0
7.1
14.2
Dimensions in mm.
Torque on screw: Max. 0.4 Nm
Recommended screw: M2.5
(1) Flatness of this area ensures full thermal contact with bolt head.
Fig.7 SOT440A.
1997 Feb 21
8
MBC888
5.5
max
4.5
min
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42012R
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 21
9
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42012R
NOTES
1997 Feb 21
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42012R
NOTES
1997 Feb 21
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 21
Document order number:
9397 750 01813