DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV2042 UHF power transistor Product specification Supersedes data of 1997 July 11 2000 May 08 Philips Semiconductors Product specification UHF power transistor BLV2042 FEATURES PINNING - SOT409A • Emitter ballasting resistors for optimum temperature profile PIN DESCRIPTION 1, 4, 5 and 8 • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS emitter 2 and 3 base 6 and 7 collector 8 handbook, halfpage 5 c • Common emitter class-AB operation in base stations in the 1800 to 1990 MHz frequency range. b DESCRIPTION e 1 NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base. 4 MSA467 Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) dim (dBc) CW, class-AB 1950 26 4 ≥11 ≥40 − CW, class-AB 1990 26 4 ≥11 ≥40 − 2-tone, class-AB f1 = 1950; f2 = 1950.1 26 4 (PEP) typ. 14 typ. 35 typ. −30 2000 May 08 2 Philips Semiconductors Product specification UHF power transistor BLV2042 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 28 V VEBO emitter-base voltage open collector − 4 V IC collector current (DC) − 1.2 A IC(AV) collector current (average) − 1.2 A Ptot total power dissipation − 14.6 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C Tmb = 25 °C; note 1 Note 1. Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering recommendations in the General part of the associated handbook”. MGU192 10 MGU193 20 handbook, halfpage handbook, halfpage Ptot (W) IC (A) 16 12 1 (1) 8 4 10−1 1 10 VCE (V) 0 102 0 40 80 120 160 200 Ts (°C) (1) Ts = 60 °C. Fig.3 Fig.2 DC SOAR. 2000 May 08 3 Total power dissipation as a function of the soldering point temperature. Philips Semiconductors Product specification UHF power transistor BLV2042 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER CONDITIONS thermal resistance from junction to mounting base VALUE UNIT 12 K/W Ptot = 14.6 W; Tmb = 25 °C; note 1 Note 1. Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering recommendations in the General part of the associated handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 5 mA 60 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 28 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.5 mA 4 − − V ICES collector leakage current VCE = 26 V; VBE = 0 − − 1.3 mA hFE DC current gain VCE = 26 V; IC = 600 mA 30 − 120 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz − 6 − pF Cre feedback capacitance VCE = 26 V; IC = 0; f = 1 MHz − 2.5 − pF MGD936 120 MGD947 50 handbook, halfpage handbook, halfpage C (pF) hFE 40 (1) (2) 80 30 20 40 10 0 Cc Cre 0 0 0.4 0.8 1.2 IC (A) 10 0 1.6 (1) VCE = 26 V; tp = 500 µs; δ = < 1 %. (2) VCE = 10 V. f = 1 MHz. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. 2000 May 08 4 20 30 40 50 VCE (V) Capacitance as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLV2042 APPLICATION INFORMATION RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) CW, class-AB 1950 26 15 4 CW, class-AB 1990 26 15 2-tone, class-AB f1 = 1950; f2 = 1950.1 26 15 Gp (dB) ηC (%) dim (dBc) ≥11 ≥40 typ. 13 typ. 43 4 ≥11 ≥40 − 4 (PEP) typ. 14 typ. 35 typ. −30 − Ruggedness in class-AB operation The BLV2042 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the following conditions: f = 1950 MHz; VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 °C. MGU190 16 handbook, halfpage 80 ηC (%) Gp (dB) Gp 12 MGU191 6 handbook, halfpage PL (W) 60 4 ηC 8 40 2 4 20 0 0 0 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 PD (W) PL (W) CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 1950 MHz; Tmb = 25 °C. CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 1950 MHz; Tmb = 25 °C. Fig.6 Fig.7 Power gain and collector efficiency as functions of load power; typical values. 2000 May 08 5 Load power as a function of drive power; typical values. Philips Semiconductors Product specification UHF power transistor BLV2042 MGD950 16 handbook, halfpage Gp (dB) handbook, halfpage ηC (%) PL (PEP) (W) 60 12 MGL163 6 80 Gp 4 8 40 ηC 2 4 20 0 0 0 1 2 3 4 PL (PEP) (W) 0 5 0.05 0 0.1 0.2 0.15 PD (PEP) (W) VCE = 26 V; ICQ = 15 mA; f1 = 1950 MHz; f2 = 1950.1 MHz. VCE = 26 V; ICQ = 15 mA; f1 = 1950 MHz; f2 = 1950.1 MHz. Fig.8 Power gain and collector efficiency as functions of peak envelope load power; typical values. Fig.9 MGD951 −20 Peak envelope load power as a function of peak envelope drive power; typical values. MGD952 −20 handbook, halfpage handbook, halfpage dim (dBc) d3 (dBc) (3) −30 (2) −30 d3 (1) −40 d5 −40 d7 −50 −50 0 1 2 3 −60 4 5 PL (PEP) (W) 0 1 2 3 4 5 PL (PEP) (W) VCE = 26 V; f1 = 1950 MHz; f2 = 1950.1 MHz. (1) ICQ = 15 mA. (2) ICQ = 40 mA. (3) ICQ = 60 mA. VCE = 26 V; ICQ = 15 mA; f1 = 1950 MHz; f2 = 1950.1 MHz. Fig.10 Third order intermodulation distortion as a function of peak envelope load power; typical values. 2000 May 08 Fig.11 Intermodulation distortion as a function of peak envelope load power; typical values. 6 Philips Semiconductors Product specification UHF power transistor BLV2042 Test circuit information ,,,,,, ,,,,,, ,,,,, ,,,,,, ,,,,, ,,,,,, ,,,, ,,,,, , ,,,,,, , ,,,,,, +Vbias handbook, full pagewidth L9 +VC C5 C1 RF-in L1 C4 C3 C11 L4 L2 L3 C10 L5 L7 DUT L6 C2 C9 R1 C8 L8 C6 C7 MGD961 Fig.12 Class-AB test circuit at 1950 MHz. 2000 May 08 7 RF-out Philips Semiconductors Product specification UHF power transistor BLV2042 List of components (see Figs 12 and 13) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C9 multilayer ceramic chip capacitor; note 1 100 pF C2, C6 multilayer ceramic chip capacitor; note 2 3 pF C3, C8 multilayer ceramic chip capacitor; note 2 27 pF C4, C10 multilayer ceramic chip capacitor 100 nF C5, C11 tantalum SMD capacitor 47 µF; 35 V C7 multilayer ceramic chip capacitor; note 2 1.2 pF L1 stripline; note 3 50 Ω length 9.9 mm width 0.91 mm L2 stripline; note 3 50 Ω length 6.66 mm width 0.91 mm L3 stripline; note 3 10 Ω length 4 mm width 8 mm L4 stripline; note 3 31 Ω length 3 mm width 2 mm L5 stripline; note 3 31 Ω length 3 mm width 2 mm L6 stripline; note 3 8.3 Ω length 17.25 mm width 10.3 mm L7 stripline; note 3 50 Ω length 2.42 mm width 0.91 mm L8 stripline; note 3 50 Ω length 6.14 mm width 0.91 mm L9 grade 4S2 ferroxcube chip-bead R1 metal film resistor CATALOGUE No. 2222 581 16641 4330 030 36301 100 Ω; 0.4 W Notes 1. American Technical Ceramics type 100B or capacitor of the same quality. 2. American Technical Ceramics type 100A or capacitor of the same quality. 3. The striplines are on a double copper-clad printed-circuit board with epoxy fibreglass dielectric (εr = 6.15); thickness 0.64 mm. 2000 May 08 8 Philips Semiconductors Product specification UHF power transistor BLV2042 70 handbook, full pagewidth 41 L9 C3 C11 C10 R1 C4 C9 C5 C1 L1 C2 L2 L3 L4 L7 L5 L6 C6 C8 L8 C7 MGD965 Dimensions in mm. The components are situated on one side of the copper-clad epoxy fibreglass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.13 Component layout for 1950 MHz class-AB test circuit. 2000 May 08 9 Philips Semiconductors Product specification UHF power transistor BLV2042 MGD953 8 MGD954 12 handbook, halfpage handbook, halfpage Zi (Ω) XL ZL (Ω) 6 xi 8 4 ri RL 4 2 0 1800 1850 1900 1950 f (MHz) 0 1800 2000 1850 1900 1950 f (MHz) 2000 VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 °C. VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 °C. Fig.14 Input impedance as a function of frequency (series components); typical values. Fig.15 Load impedance as a function of frequency (series components); typical values. MGD955 16 handbook, halfpage handbook, halfpage Gp (dB) Zi 12 ZL Fig.17 Definition of transistor impedance. 8 4 0 1800 MOUNTING RECOMMENDATIONS 1850 1900 1950 Heat from the device is transferred via the leads and the metallized underside. For optimum heat transfer it is recommended that the transistor be mounted on a grounded metallized area on the component side of the printed-circuit board. This metallized area should contain a large number of metallized, solder-filled through-holes. The non-component side of the printed-circuit board forms a ground plane. When the printed-circuit board is mounted on the heatsink using heatsink compound, a thermal resistance from mounting base to heatsink of 0.9 K/W can be attained. 2000 f (MHz) VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 °C. Fig.16 Power gain as a function of frequency; typical values. 2000 May 08 MBA451 10 Philips Semiconductors Product specification UHF power transistor BLV2042 PACKAGE OUTLINE Ceramic surface mounted package; 8 leads SOT409A D A D2 B c w2 B H1 8 5 L E2 H E A 1 4 e α w1 b Q1 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 E E2 e H H1 L Q1 w1 w2 α mm 2.36 2.06 0.58 0.43 0.23 0.18 5.94 5.03 5.16 5.00 4.93 4.01 4.14 3.99 1.27 7.47 7.26 4.39 4.24 1.02 0.51 0.10 0.00 0.25 0.25 7° 0° inches 0.093 0.081 0.023 0.017 0.009 0.007 0.234 0.198 0.203 0.197 0.194 0.158 0.163 0.157 0.050 0.294 0.286 0.173 0.167 0.040 0.020 0.004 0.000 0.010 0.010 7° 0° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 98-01-27 SOT409A 2000 May 08 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification UHF power transistor BLV2042 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 May 08 12 Philips Semiconductors Product specification UHF power transistor BLV2042 NOTES 2000 May 08 13 Philips Semiconductors Product specification UHF power transistor BLV2042 NOTES 2000 May 08 14 Philips Semiconductors Product specification UHF power transistor BLV2042 NOTES 2000 May 08 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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