PHILIPS BLV2042

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLV2042
UHF power transistor
Product specification
Supersedes data of 1997 July 11
2000 May 08
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
FEATURES
PINNING - SOT409A
• Emitter ballasting resistors for optimum
temperature profile
PIN
DESCRIPTION
1, 4, 5 and 8
• Gold metallization ensures excellent reliability
• Internal input matching to achieve high power gain and
easy design of wideband circuits.
APPLICATIONS
emitter
2 and 3
base
6 and 7
collector
8
handbook, halfpage
5
c
• Common emitter class-AB operation in base stations in
the 1800 to 1990 MHz frequency range.
b
DESCRIPTION
e
1
NPN silicon planar epitaxial power transistor in an 8-lead
SOT409A SMD package with ceramic cap.
All leads are isolated from the mounting base.
4
MSA467
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
dim
(dBc)
CW, class-AB
1950
26
4
≥11
≥40
−
CW, class-AB
1990
26
4
≥11
≥40
−
2-tone, class-AB
f1 = 1950; f2 = 1950.1
26
4 (PEP)
typ. 14
typ. 35
typ. −30
2000 May 08
2
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
28
V
VEBO
emitter-base voltage
open collector
−
4
V
IC
collector current (DC)
−
1.2
A
IC(AV)
collector current (average)
−
1.2
A
Ptot
total power dissipation
−
14.6
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
Tmb = 25 °C; note 1
Note
1. Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering
recommendations in the General part of the associated handbook”.
MGU192
10
MGU193
20
handbook, halfpage
handbook, halfpage
Ptot
(W)
IC
(A)
16
12
1
(1)
8
4
10−1
1
10
VCE (V)
0
102
0
40
80
120
160
200
Ts (°C)
(1) Ts = 60 °C.
Fig.3
Fig.2 DC SOAR.
2000 May 08
3
Total power dissipation as a function of the
soldering point temperature.
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
CONDITIONS
thermal resistance from junction to
mounting base
VALUE
UNIT
12
K/W
Ptot = 14.6 W; Tmb = 25 °C; note 1
Note
1. Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering
recommendations in the General part of the associated handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 5 mA
60
−
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA
28
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.5 mA
4
−
−
V
ICES
collector leakage current
VCE = 26 V; VBE = 0
−
−
1.3
mA
hFE
DC current gain
VCE = 26 V; IC = 600 mA
30
−
120
Cc
collector capacitance
VCB = 26 V; IE = ie = 0; f = 1 MHz
−
6
−
pF
Cre
feedback capacitance
VCE = 26 V; IC = 0; f = 1 MHz
−
2.5
−
pF
MGD936
120
MGD947
50
handbook, halfpage
handbook, halfpage
C
(pF)
hFE
40
(1)
(2)
80
30
20
40
10
0
Cc
Cre
0
0
0.4
0.8
1.2
IC (A)
10
0
1.6
(1) VCE = 26 V; tp = 500 µs; δ = < 1 %.
(2) VCE = 10 V.
f = 1 MHz.
Fig.4
Fig.5
DC current gain as a function of collector
current; typical values.
2000 May 08
4
20
30
40
50
VCE (V)
Capacitance as a function of
collector-emitter voltage; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
APPLICATION INFORMATION
RF performance at Tmb = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
CW, class-AB
1950
26
15
4
CW, class-AB
1990
26
15
2-tone, class-AB
f1 = 1950; f2 = 1950.1
26
15
Gp
(dB)
ηC
(%)
dim
(dBc)
≥11
≥40
typ. 13
typ. 43
4
≥11
≥40
−
4 (PEP)
typ. 14
typ. 35
typ. −30
−
Ruggedness in class-AB operation
The BLV2042 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the
following conditions: f = 1950 MHz; VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 °C.
MGU190
16
handbook, halfpage
80
ηC
(%)
Gp
(dB)
Gp
12
MGU191
6
handbook, halfpage
PL
(W)
60
4
ηC
8
40
2
4
20
0
0
0
0
1
2
3
4
5
0
0.1
0.2
0.3
0.4
PD (W)
PL (W)
CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 1950 MHz;
Tmb = 25 °C.
CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 1950 MHz;
Tmb = 25 °C.
Fig.6
Fig.7
Power gain and collector efficiency as
functions of load power; typical values.
2000 May 08
5
Load power as a function of drive power;
typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
MGD950
16
handbook, halfpage
Gp
(dB)
handbook, halfpage
ηC
(%)
PL
(PEP)
(W)
60
12
MGL163
6
80
Gp
4
8
40
ηC
2
4
20
0
0
0
1
2
3
4
PL (PEP) (W)
0
5
0.05
0
0.1
0.2
0.15
PD (PEP) (W)
VCE = 26 V; ICQ = 15 mA; f1 = 1950 MHz; f2 = 1950.1 MHz.
VCE = 26 V; ICQ = 15 mA; f1 = 1950 MHz; f2 = 1950.1 MHz.
Fig.8
Power gain and collector efficiency as
functions of peak envelope load power;
typical values.
Fig.9
MGD951
−20
Peak envelope load power as a function of
peak envelope drive power; typical values.
MGD952
−20
handbook, halfpage
handbook, halfpage
dim
(dBc)
d3
(dBc)
(3)
−30
(2)
−30
d3
(1)
−40
d5
−40
d7
−50
−50
0
1
2
3
−60
4
5
PL (PEP) (W)
0
1
2
3
4
5
PL (PEP) (W)
VCE = 26 V; f1 = 1950 MHz; f2 = 1950.1 MHz.
(1) ICQ = 15 mA.
(2) ICQ = 40 mA.
(3) ICQ = 60 mA.
VCE = 26 V; ICQ = 15 mA; f1 = 1950 MHz; f2 = 1950.1 MHz.
Fig.10 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
2000 May 08
Fig.11 Intermodulation distortion as a function of
peak envelope load power; typical values.
6
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
Test circuit information
,,,,,,
,,,,,,
,,,,,
,,,,,,
,,,,,
,,,,,,
,,,,
,,,,,
,
,,,,,,
,
,,,,,,
+Vbias
handbook, full pagewidth
L9
+VC
C5
C1
RF-in
L1
C4
C3
C11
L4
L2
L3
C10
L5
L7
DUT
L6
C2
C9
R1
C8
L8
C6
C7
MGD961
Fig.12 Class-AB test circuit at 1950 MHz.
2000 May 08
7
RF-out
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
List of components (see Figs 12 and 13)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C9
multilayer ceramic chip capacitor; note 1
100 pF
C2, C6
multilayer ceramic chip capacitor; note 2
3 pF
C3, C8
multilayer ceramic chip capacitor; note 2
27 pF
C4, C10
multilayer ceramic chip capacitor
100 nF
C5, C11
tantalum SMD capacitor
47 µF; 35 V
C7
multilayer ceramic chip capacitor; note 2
1.2 pF
L1
stripline; note 3
50 Ω
length 9.9 mm
width 0.91 mm
L2
stripline; note 3
50 Ω
length 6.66 mm
width 0.91 mm
L3
stripline; note 3
10 Ω
length 4 mm
width 8 mm
L4
stripline; note 3
31 Ω
length 3 mm
width 2 mm
L5
stripline; note 3
31 Ω
length 3 mm
width 2 mm
L6
stripline; note 3
8.3 Ω
length 17.25 mm
width 10.3 mm
L7
stripline; note 3
50 Ω
length 2.42 mm
width 0.91 mm
L8
stripline; note 3
50 Ω
length 6.14 mm
width 0.91 mm
L9
grade 4S2 ferroxcube chip-bead
R1
metal film resistor
CATALOGUE No.
2222 581 16641
4330 030 36301
100 Ω; 0.4 W
Notes
1. American Technical Ceramics type 100B or capacitor of the same quality.
2. American Technical Ceramics type 100A or capacitor of the same quality.
3. The striplines are on a double copper-clad printed-circuit board with epoxy fibreglass dielectric (εr = 6.15);
thickness 0.64 mm.
2000 May 08
8
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
70
handbook, full pagewidth
41
L9
C3
C11
C10
R1
C4
C9
C5
C1
L1
C2
L2
L3
L4
L7
L5
L6
C6
C8
L8
C7
MGD965
Dimensions in mm.
The components are situated on one side of the copper-clad epoxy fibreglass board, the other side is not etched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.13 Component layout for 1950 MHz class-AB test circuit.
2000 May 08
9
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
MGD953
8
MGD954
12
handbook, halfpage
handbook, halfpage
Zi
(Ω)
XL
ZL
(Ω)
6
xi
8
4
ri
RL
4
2
0
1800
1850
1900
1950
f (MHz)
0
1800
2000
1850
1900
1950
f (MHz)
2000
VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 °C.
VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 °C.
Fig.14 Input impedance as a function of frequency
(series components); typical values.
Fig.15 Load impedance as a function of frequency
(series components); typical values.
MGD955
16
handbook, halfpage
handbook, halfpage
Gp
(dB)
Zi
12
ZL
Fig.17 Definition of transistor impedance.
8
4
0
1800
MOUNTING RECOMMENDATIONS
1850
1900
1950
Heat from the device is transferred via the leads and the
metallized underside. For optimum heat transfer it is
recommended that the transistor be mounted on a
grounded metallized area on the component side of the
printed-circuit board. This metallized area should contain a
large number of metallized, solder-filled through-holes.
The non-component side of the printed-circuit board forms
a ground plane. When the printed-circuit board is mounted
on the heatsink using heatsink compound, a thermal
resistance from mounting base to heatsink of 0.9 K/W can
be attained.
2000
f (MHz)
VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 °C.
Fig.16 Power gain as a function of frequency;
typical values.
2000 May 08
MBA451
10
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
PACKAGE OUTLINE
Ceramic surface mounted package; 8 leads
SOT409A
D
A
D2
B
c
w2 B
H1
8
5
L
E2
H
E
A
1
4
e
α
w1
b
Q1
0
2.5
5 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D2
E
E2
e
H
H1
L
Q1
w1
w2
α
mm
2.36
2.06
0.58
0.43
0.23
0.18
5.94
5.03
5.16
5.00
4.93
4.01
4.14
3.99
1.27
7.47
7.26
4.39
4.24
1.02
0.51
0.10
0.00
0.25
0.25
7°
0°
inches
0.093
0.081
0.023
0.017
0.009
0.007
0.234
0.198
0.203
0.197
0.194
0.158
0.163
0.157
0.050
0.294
0.286
0.173
0.167
0.040
0.020
0.004
0.000
0.010
0.010
7°
0°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
98-01-27
SOT409A
2000 May 08
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 May 08
12
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
NOTES
2000 May 08
13
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
NOTES
2000 May 08
14
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
NOTES
2000 May 08
15
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SCA 69
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Printed in The Netherlands
613524/03/pp16
Date of release: 2000
May 08
Document order number:
9397 750 07006