ETC BLT71/T1

DISCRETE SEMICONDUCTORS
DATA SHEET
BLT71
UHF power transistor
Product specification
1995 Aug 17
Philips Semiconductors
Product specification
UHF power transistor
BLT71
FEATURES
• Very high efficiency
• Low supply voltage.
4
handbook, halfpage
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB
operation in the 900 MHz communications band.
c
b
DESCRIPTION
e
NPN silicon planar epitaxial transistor encapsulated in a
SOT223 envelope.
1
PINNING - SOT223
2
3
MAM043 - 1
Top view
PIN
SYMBOL
DESCRIPTION
1
e
emitter
2
b
base
3
e
emitter
4
c
collector
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
CW, class-AB
900
4.8
1.2
≥6
≥60
1995 Aug 17
206
Philips Semiconductors
Product specification
UHF power transistor
BLT71
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
16
V
VCEO
collector-emitter voltage
open base
−
8
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
500
mA
Ptot
total power dissipation
up to Ts = 90 °C
−
3.5
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
175
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
Ptot = 3.5 W; up to Ts = 90 °C;
note 1
VALUE
24
UNIT
K/W
Note
1. Ts is the temperature at the soldering point of the collector lead.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
−
MAX.
UNIT
−
V
V(BR)CBO
collector-base breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage open base; IC = 10 mA
8
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
2.5
−
−
V
ICES
collector leakage current
VCE = 8 V; VBE = 0
−
−
100
µA
open emitter; IC = 0.5 mA
16
hFE
DC current gain
VCE = 5 V; IC = 100 mA
25
−
−
Cc
collector capacitance
VCB = 4.8 V; IE = ie = 0; f = 1 MHz
−
−
7
pF
Cre
feedback capacitance
VCE = 4.8 V; IC = 0; f = 1 MHz
−
−
5
pF
1995 Aug 17
207
Philips Semiconductors
Product specification
UHF power transistor
BLT71
MLD129
1
MLD130
6
handbook, halfpage
handbook, halfpage
Cc
(pF)
IC
(A)
4
2
10 1 1
10
1
10
VCE (V)
0
10 2
0
4
8
12
16
20
VCB (V)
IE = ie = 0; f = 1 MHz.
Ts = 90 °C.
Fig.3
Fig.2 DC SOAR.
MLD131
150
handbook, halfpage
h FE
100
50
0
0
200
400
600
800
IC (mA)
Measured under pulsed conditions: tp ≤ 300 µs; δ ≤ 0.01.
VCE = 4.8 V.
Fig.4
DC current gain as a function of collector
current; typical values.
1995 Aug 17
208
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT71
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
CW, class-AB
900
4.8
1
1.2
≥6
≥60
Ruggedness in class-AB operation
The BLT71 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: PL = 1.2 W; VCE = 6.5 V; f = 900 MHz.
MLD133
MLD132
10
Gp
(dB)
8
2.0
PL
(W)
100
η
(%)
handbook, halfpage
Gp
handbook, halfpage
80
1.6
6
60
1.2
4
40
0.8
2
20
0.4
η
0
0
0
0.4
0.8
1.2
1.6
0
0
2
P L (W)
VCE = 4.8 V.
ICQ = 1 mA.
VCE = 4.8 V.
ICQ = 1 mA.
f = 900 MHz.
f = 900 MHz.
Fig.5
1995 Aug 17
Power gain and efficiency as functions
of load power; typical values.
Fig.6
209
100
200
300
400
500
Pi (mW)
Load power as a function of input
power; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT71
VS
handbook, full pagewidth
C11
L8
R1
V bias
C8
C6
C9
L3
input
50 Ω
C1
C2
C3
L1
C4
C5
L2
L7
DUT
L4
L5
L6
C7
L9
C10
C12 C14
L10
C16
C13
C15
output
50 Ω
MLD134
Fig.7 Class-AB test circuit at 900 MHz.
1995 Aug 17
210
Philips Semiconductors
Product specification
UHF power transistor
BLT71
List of components (see Figs 7 and 8)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C6, C9, C16
multilayer ceramic chip capacitor;
note 1
100 pF
C2, C4, C12, C14
multilayer ceramic chip capacitor;
note 1
1 pF
C3, C5, C13, C15
film dielectric trimmer
1.4 to 5.5 pF
C7
multilayer ceramic chip capacitor;
note 1
6.8 pF
C8
tantalum capacitor
1 µF, 35 V
C10
multilayer ceramic chip capacitor;
note 1
5.1 pF
C11
tantalum capacitor
100 µF, 20 V
L1
stripline; note 2
50 Ω
length 28.5 mm
width 5 mm
L2
stripline; note 2
50 Ω
length 23 mm
width 5 mm
L3
11 turns enamelled 0.6 mm copper 100 nH
wire
L4
stripline; note 2
50 Ω
length 1 mm
width 5 mm
L5
stripline; note 2
50 Ω
length 3 mm
width 2.5 mm
L6
stripline; note 2
50 Ω
length 9 mm
width 5 mm
L7
7 turns enamelled 0.6 mm copper
wire
37 nH
length 7.3 mm
internal dia. 3.3 mm
L8
grade 3B Ferroxcube wideband
HF choke
L9
stripline; note 2
50 Ω
length 13.5 mm
width 5 mm
L10
stripline; note 2
50 Ω
length 26.5 mm
width 5 mm
R1
metal film resistor
0.1 W, 10 Ω
CATALOGUE No.
2222 809 09004
length 7.5 mm
internal dia. 3.3 mm
4132 020 36640
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2); thickness 1⁄16";
thickness of the copper sheet 2 × 35 µm.
1995 Aug 17
211
Philips Semiconductors
Product specification
UHF power transistor
BLT71
139
handbook, full pagewidth
79
VS
V bias
L8
C11
C8
Copper foil
C6
C1
C3
R1
L3
C4
C2
L1
L2
C5
C9 C12
L7
L5
L4
L6
C7
C10
L9
C13
C14
C16
L10
C15
Plated through holes
BLT71
MLD135
Dimensions in mm.
The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Component lay-out and printed-circuit board for 900 MHz class-AB test circuit.
1995 Aug 17
212
Philips Semiconductors
Product specification
UHF power transistor
BLT71
SPICE parameters for the BLT71 crystal
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
3.503
fA
2
BF
190.5
−
3
NF
0.981
−
4
VAF
35.45
V
5
IKF
24.52
A
6
ISE
184.9
fA
7
NE
1.475
−
8
BR
12.61
−
9
NR
1.042
−
10
VAR
1.476
V
11
IKR
2.206
A
12
ISC
866.5
aA
13
NC
1.025
−
14
RB
2.000
Ω
15
IRB
1.000
µA
16
RBM
2.000
Ω
17
RE
373.8
mΩ
18
RC
330.6
mΩ
19(1)
XTB
0.000
−
20(1)
EG
1.110
eV
21(1)
XTI
3.000
−
22
CJE
9.746
pF
23
VJE
0.600
V
24
MJE
0.288
−
25
TF
11.99
ps
26
XTF
0.979
−
27
VTF
19.52
mV
28
ITF
0.137
A
29
PTF
0.000
deg
30
CJC
5.028
pF
31
VJC
0.609
V
32
MJC
0.368
−
33
XCJC
0.150
−
34
TR
3.841
ns
35(1)
CJS
0.000
F
36(1)
VJS
750.0
mV
37(1)
MJS
0.000
−
38
FC
0.813
−
L1
LB
B
L2
B'
C'
E'
C be
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E (f) = QLB,E√(f/Fc);
Fc = scaling frequency = 1 GHz.
Fig.9 Package equivalent circuit SOT223H.
List of components (see Fig.9)
DESIGNATION
Note
1. These parameters have not been extracted, the
default values are shown.
1995 Aug 17
C cb
handbook, halfpage
213
VALUE
UNIT
Cbe
182
fF
Ccb
16
fF
Cce
249
fF
L1
0.025
nH
L2
1.19
nH
L3
0.6
nH
LB
1.85
nH
LE
1.22
nH
Philips Semiconductors
Product specification
UHF power transistor
BLT71
MLD136
MLD137
20
20
handbook, halfpage
handbook, halfpage
Zi
(Ω)
16
ZL
(Ω)
RL
10
ri
12
0
8
XL
xi
10
4
0
800
850
900
950
20
800
1000
f (MHz)
850
900
950
1000
f (MHz)
VCE = 4.8 V; ICQ = 1 mA.
PL = 1.2 W; Tamb = 25 °C.
VCE = 4.8 V; ICQ = 1 mA.
PL = 1.2 W; Tamb = 25 °C.
Fig.10 Input impedance as a function of frequency
(series components); typical values.
Fig.11 Load impedance as a function of frequency
(series components); typical values.
MLD138
10
Gp
handbook, halfpage
(dB)
8
6
handbook, halfpage
4
Zi
ZL
MBA451
2
0
800
850
900
950
1000
f (MHz)
VCE = 4.8 V; ICQ = 1 mA.
PL = 1.2 W; Tamb = 25 °C.
Fig.12 Gain as a function of frequency;
typical values.
1995 Aug 17
Fig.13 Definition of transistor impedance.
214
Philips Semiconductors
Product specification
UHF power transistor
BLT71
PACKAGE OUTLINE
0.95
0.85
handbook, full pagewidth
S
0.1 S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
4
A
0.10
0.01
16 o
max
16
3.7
3.3
10 o
max
2
0.80
0.60
2.3
4.6
Dimensions in mm.
Fig.14 SOT223.
1995 Aug 17
7.3
6.7
o
1
1.80
max
0.2 M A
215
3
0.1 M B
(4x)
MSA035 - 1
Philips Semiconductors
Product specification
UHF power transistor
BLT71
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Aug 17
216