DISCRETE SEMICONDUCTORS DATA SHEET BLT71 UHF power transistor Product specification 1995 Aug 17 Philips Semiconductors Product specification UHF power transistor BLT71 FEATURES • Very high efficiency • Low supply voltage. 4 handbook, halfpage APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communications band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a SOT223 envelope. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL DESCRIPTION 1 e emitter 2 b base 3 e emitter 4 c collector Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) CW, class-AB 900 4.8 1.2 ≥6 ≥60 1995 Aug 17 206 Philips Semiconductors Product specification UHF power transistor BLT71 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 16 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 500 mA Ptot total power dissipation up to Ts = 90 °C − 3.5 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 175 °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 3.5 W; up to Ts = 90 °C; note 1 VALUE 24 UNIT K/W Note 1. Ts is the temperature at the soldering point of the collector lead. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. − MAX. UNIT − V V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 8 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − − V ICES collector leakage current VCE = 8 V; VBE = 0 − − 100 µA open emitter; IC = 0.5 mA 16 hFE DC current gain VCE = 5 V; IC = 100 mA 25 − − Cc collector capacitance VCB = 4.8 V; IE = ie = 0; f = 1 MHz − − 7 pF Cre feedback capacitance VCE = 4.8 V; IC = 0; f = 1 MHz − − 5 pF 1995 Aug 17 207 Philips Semiconductors Product specification UHF power transistor BLT71 MLD129 1 MLD130 6 handbook, halfpage handbook, halfpage Cc (pF) IC (A) 4 2 10 1 1 10 1 10 VCE (V) 0 10 2 0 4 8 12 16 20 VCB (V) IE = ie = 0; f = 1 MHz. Ts = 90 °C. Fig.3 Fig.2 DC SOAR. MLD131 150 handbook, halfpage h FE 100 50 0 0 200 400 600 800 IC (mA) Measured under pulsed conditions: tp ≤ 300 µs; δ ≤ 0.01. VCE = 4.8 V. Fig.4 DC current gain as a function of collector current; typical values. 1995 Aug 17 208 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLT71 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) CW, class-AB 900 4.8 1 1.2 ≥6 ≥60 Ruggedness in class-AB operation The BLT71 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the following conditions: PL = 1.2 W; VCE = 6.5 V; f = 900 MHz. MLD133 MLD132 10 Gp (dB) 8 2.0 PL (W) 100 η (%) handbook, halfpage Gp handbook, halfpage 80 1.6 6 60 1.2 4 40 0.8 2 20 0.4 η 0 0 0 0.4 0.8 1.2 1.6 0 0 2 P L (W) VCE = 4.8 V. ICQ = 1 mA. VCE = 4.8 V. ICQ = 1 mA. f = 900 MHz. f = 900 MHz. Fig.5 1995 Aug 17 Power gain and efficiency as functions of load power; typical values. Fig.6 209 100 200 300 400 500 Pi (mW) Load power as a function of input power; typical values. Philips Semiconductors Product specification UHF power transistor BLT71 VS handbook, full pagewidth C11 L8 R1 V bias C8 C6 C9 L3 input 50 Ω C1 C2 C3 L1 C4 C5 L2 L7 DUT L4 L5 L6 C7 L9 C10 C12 C14 L10 C16 C13 C15 output 50 Ω MLD134 Fig.7 Class-AB test circuit at 900 MHz. 1995 Aug 17 210 Philips Semiconductors Product specification UHF power transistor BLT71 List of components (see Figs 7 and 8) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C6, C9, C16 multilayer ceramic chip capacitor; note 1 100 pF C2, C4, C12, C14 multilayer ceramic chip capacitor; note 1 1 pF C3, C5, C13, C15 film dielectric trimmer 1.4 to 5.5 pF C7 multilayer ceramic chip capacitor; note 1 6.8 pF C8 tantalum capacitor 1 µF, 35 V C10 multilayer ceramic chip capacitor; note 1 5.1 pF C11 tantalum capacitor 100 µF, 20 V L1 stripline; note 2 50 Ω length 28.5 mm width 5 mm L2 stripline; note 2 50 Ω length 23 mm width 5 mm L3 11 turns enamelled 0.6 mm copper 100 nH wire L4 stripline; note 2 50 Ω length 1 mm width 5 mm L5 stripline; note 2 50 Ω length 3 mm width 2.5 mm L6 stripline; note 2 50 Ω length 9 mm width 5 mm L7 7 turns enamelled 0.6 mm copper wire 37 nH length 7.3 mm internal dia. 3.3 mm L8 grade 3B Ferroxcube wideband HF choke L9 stripline; note 2 50 Ω length 13.5 mm width 5 mm L10 stripline; note 2 50 Ω length 26.5 mm width 5 mm R1 metal film resistor 0.1 W, 10 Ω CATALOGUE No. 2222 809 09004 length 7.5 mm internal dia. 3.3 mm 4132 020 36640 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2); thickness 1⁄16"; thickness of the copper sheet 2 × 35 µm. 1995 Aug 17 211 Philips Semiconductors Product specification UHF power transistor BLT71 139 handbook, full pagewidth 79 VS V bias L8 C11 C8 Copper foil C6 C1 C3 R1 L3 C4 C2 L1 L2 C5 C9 C12 L7 L5 L4 L6 C7 C10 L9 C13 C14 C16 L10 C15 Plated through holes BLT71 MLD135 Dimensions in mm. The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.8 Component lay-out and printed-circuit board for 900 MHz class-AB test circuit. 1995 Aug 17 212 Philips Semiconductors Product specification UHF power transistor BLT71 SPICE parameters for the BLT71 crystal SEQUENCE No. PARAMETER VALUE UNIT 1 IS 3.503 fA 2 BF 190.5 − 3 NF 0.981 − 4 VAF 35.45 V 5 IKF 24.52 A 6 ISE 184.9 fA 7 NE 1.475 − 8 BR 12.61 − 9 NR 1.042 − 10 VAR 1.476 V 11 IKR 2.206 A 12 ISC 866.5 aA 13 NC 1.025 − 14 RB 2.000 Ω 15 IRB 1.000 µA 16 RBM 2.000 Ω 17 RE 373.8 mΩ 18 RC 330.6 mΩ 19(1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 9.746 pF 23 VJE 0.600 V 24 MJE 0.288 − 25 TF 11.99 ps 26 XTF 0.979 − 27 VTF 19.52 mV 28 ITF 0.137 A 29 PTF 0.000 deg 30 CJC 5.028 pF 31 VJC 0.609 V 32 MJC 0.368 − 33 XCJC 0.150 − 34 TR 3.841 ns 35(1) CJS 0.000 F 36(1) VJS 750.0 mV 37(1) MJS 0.000 − 38 FC 0.813 − L1 LB B L2 B' C' E' C be C Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E (f) = QLB,E√(f/Fc); Fc = scaling frequency = 1 GHz. Fig.9 Package equivalent circuit SOT223H. List of components (see Fig.9) DESIGNATION Note 1. These parameters have not been extracted, the default values are shown. 1995 Aug 17 C cb handbook, halfpage 213 VALUE UNIT Cbe 182 fF Ccb 16 fF Cce 249 fF L1 0.025 nH L2 1.19 nH L3 0.6 nH LB 1.85 nH LE 1.22 nH Philips Semiconductors Product specification UHF power transistor BLT71 MLD136 MLD137 20 20 handbook, halfpage handbook, halfpage Zi (Ω) 16 ZL (Ω) RL 10 ri 12 0 8 XL xi 10 4 0 800 850 900 950 20 800 1000 f (MHz) 850 900 950 1000 f (MHz) VCE = 4.8 V; ICQ = 1 mA. PL = 1.2 W; Tamb = 25 °C. VCE = 4.8 V; ICQ = 1 mA. PL = 1.2 W; Tamb = 25 °C. Fig.10 Input impedance as a function of frequency (series components); typical values. Fig.11 Load impedance as a function of frequency (series components); typical values. MLD138 10 Gp handbook, halfpage (dB) 8 6 handbook, halfpage 4 Zi ZL MBA451 2 0 800 850 900 950 1000 f (MHz) VCE = 4.8 V; ICQ = 1 mA. PL = 1.2 W; Tamb = 25 °C. Fig.12 Gain as a function of frequency; typical values. 1995 Aug 17 Fig.13 Definition of transistor impedance. 214 Philips Semiconductors Product specification UHF power transistor BLT71 PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 0.32 0.24 6.7 6.3 3.1 2.9 B 4 A 0.10 0.01 16 o max 16 3.7 3.3 10 o max 2 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.14 SOT223. 1995 Aug 17 7.3 6.7 o 1 1.80 max 0.2 M A 215 3 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification UHF power transistor BLT71 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Aug 17 216