Order this document by MMG05N60D/D SEMICONDUCTOR TECHNICAL DATA N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. POWERLUX IGBT 0.5 A @ 25°C 600 V • • • • Built–In Free Wheeling Diode Built–In Gate Protection Zener Diode Industry Standard Package (SOT223) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn–Off SOA 4 C 1 2 3 1=G 2=4=C 3=E G E CASE 318E–04 TO–261A MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameters Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VCGR ± 15 Vdc IC25 IC90 ICM 0.5 0.3 2.0 Adc PD 1.0 Watt TJ, Tstg – 55 to 150 °C RθJC RθJA 30 150 °C/W TL 260 Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C) Single Pulse Drain–to–Source Avalanche Energy – Starting @ TC = 25°C Energy – Starting @ TC = 125°C VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W EAS mJ 125 40 (1) Pulse width is limited by maximum junction temperature repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. Power Motorola Motorola, Inc. 1997 Products Division Technical Data 1 MMG05N60D ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 600 — 680 0.7 — — Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) BVCES Vdc V/°C µAdc Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C) (VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C) ICES ICES — — 0.1 5.0 5.0 50 Gate–Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc) IGES — 10 100 — — 1.6 1.5 2.0 — 3.5 — — 6.0 6.0 — mV/°C gfe 0.3 0.42 — Mhos Cies — 75 100 pF Coes — 11 20 Cres — 1.6 5.0 — — — — 5.0 5.2 2.3 2.3 6.0 — 3.0 — — 150 — — 35 — 28 — mAdc ON CHARACTERISTICS Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C) (VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 250 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 20 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 0.3 Adc, TC = 25°C) (IEC = 0.3 Adc, TC = 125°C) (IEC = 0.1 Adc, TC = 25°C) (IEC = 0.1 Adc, TC = 125°C) VFEC Reverse Recovery Time @ TC = 25°C IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms trr Reverse Recovery Stored Charge IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms QRR Vdc ns mC SWITCHING CHARACTERISTICS (1) Turn–Off Delay Time Fall Time Turn–Off Switching Loss Turn–Off Delay Time Fall Time Turn–Off Switching Loss Gate Charge (VCC = 300 Vdc, IC = 0.4 Adc, VGE = 15 Vd Vdc, L = 3 3.0 0 mH, H RG = 25 Ω Ω, TC = 25 25°C, C, dV/dt = 1000 V/ms) Energy losses include “tail” td(off) — ns tf — 150 — Eoff — 3.25 4.25 mJ (VCC = 300 Vdc, IC = 0.4 Adc, VGE = 15 Vd Vdc, L = 3 3.0 0 mH, H RG = 25 Ω Ω, TC = 125°C, 125 C, dV/dt = 1000 V/ms) Energy losses include “tail” td(off) — 21 — ns tf — 280 — Eoff — 8.0 10 mJ (VCC = 300 Vdc, IC = 0.3 Adc, VGE = 15 Vdc) QT — 6.4 — nC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola Power Products Division Technical Data MMG05N60D 2.5 TC = 25°C VGE = 15 V 12.5 V IC , COLLECTOR–EMITTER CURRENT (A) IC , COLLECTOR–EMITTER CURRENT (A) 2.5 10 V 2.0 1.5 8.0 V 1.0 0.5 0 2.0 10 V 2.0 1.5 8.0 V 1.0 0.5 4.0 3.0 1.0 2.0 3.0 4.0 5.0 Figure 1. Saturation Characteristics Figure 2. Saturation Characteristics 12.5 V VGE = 15 V VCE , COLLECTOR–TO–EMITTER VOLTAGE (V) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) TC = –20°C 10 V 2.0 1.5 8.0 V 1.0 0.5 0 1.0 2.0 3.0 IC = 700 m 1.9 IC = 500 mA 1.8 IC = 300 mA 1.7 1.6 1.5 VG = 15 V 1.4 4.0 –25 0 25 50 75 100 125 TC, CASE TEMPERATURE (°C) Figure 3. Saturation Characteristics Figure 4. Collector–To–Emitter Saturation Voltage versus Case Temperature V FEC , COLLECTOR–TO–EMITTER VOLTAGE (V) TC = 150°C –20°C 17 25°C 12 7.0 2.0 0.5 1.0 1.5 2.0 150 10 IC = 500 m 8.0 IC = 300 mA 6.0 4.0 IC = 100 mA 2.0 0 25 50 75 100 125 IF, COLLECTOR CURRENT (AMPS) TC, CASE TEMPERATURE (°C) Figure 5. Diode Forward Voltage Figure 6. Diode Forward Voltage versus Case Temperature Motorola Power Products Division Technical Data 6.0 2.0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 22 0 0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 2.5 IC , COLLECTOR–EMITTER CURRENT (A) 12.5 V 0 1.0 V FEC , EMITTER–TO–COLLECTOR VOLTAGE (V) VGE = 15 V TC = 150°C 150 3 MMG05N60D 150 15 100 VGE, GATE–TO–EMITTER VOLTAGE (V) C, CAPACITANCE (pF) TC = 25°C Cies Coes 50 Cres 0 VCE = 300 V VGE = 15 V IC = 0.3 A TC = 25°C 5.0 0 0 5.0 10 20 15 25 3.0 4.0 6.0 5.0 7.0 Figure 7. Capacitance Variation Figure 8. Gate–To–Emitter Voltage versus Total Charge 125°C 30 20 25°C 10 0 0 2.0 QG, TOTAL GATE CHARGE (nC) L = 3.0 mH VCC = 300 V VGE = 15 V RG = 25 W dV/dt = 1.0 kV/ms 40 1.0 COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 60 50 0 Eoff , TOTAL SWITCHING ENERGY LOSSES ( m J) Eoff , TOTAL SWITCHING ENERGY LOSSES ( m J) 10 0.5 1.0 20 15 0.7 A 10 0.3 A 5.0 0 2.0 1.5 L = 3.0 mH VCC = 300 V VGE = 15 V RG = 25 W dV/dt = 1.0 kV/ms 25 75 50 100 125 IC, COLLECTOR–TO–EMITTER CURRENT (AMPS) TC, CASE TEMPERATURE (°C) Figure 9. Total Switching Losses versus Collector–To–Emitter Current Figure 10. Total Switching Losses versus Case Temperature 150 ICE, COLLECTOR–EMITTER CURRENT (A) 2.5 2.0 1.5 1.0 TC = 125°C VGE = 15 V RG = 25 W L = 3.0 mH 0.5 0 0 100 200 300 400 500 600 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 11. Minimum Turn–Off Safe Operating Area 4 Motorola Power Products Division Technical Data MMG05N60D 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE RθJC(t) = r(t) RθJC RθJC = 30°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 t, TIME (ms) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 12. Typical Thermal Response 3.8 0.15 2.0 0.079 4.6 0.181 6.2 0.244 2.3 0.091 2.0 0.079 1.5 0.059 Motorola Power Products Division Technical Data 1.5 0.059 1.5 0.059 mm inches 5 MMG05N60D PACKAGE DIMENSIONS A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) M H INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 K CASE 318E–04 TO–261A ISSUE H Motorola reserves the right to make changes without further notice to any products herein. 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