ONSEMI MGW12N120D

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SEMICONDUCTOR TECHNICAL DATA
 Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed Eoff: 150 mJ/A typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
C
G
C
E
G
CASE 340K–01
STYLE 4
TO–247AE
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
1200
Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)
VCGR
1200
Vdc
Gate–Emitter Voltage — Continuous
VGE
± 20
Vdc
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
IC25
IC90
ICM
20
12
40
Adc
PD
125
0.98
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
tsc
10
ms
RθJC
RθJC
RθJA
1.0
1.4
45
°C/W
TL
260
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
Apk
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
IGBT
 Motorola
Motorola, Inc.
1998 Device
Data
1
MGW12N120D
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
1200
—
—
870
—
—
—
—
—
—
100
2500
—
—
250
—
—
—
2.71
3.78
3.5
3.37
—
4.42
4.0
—
6.0
10
8.0
—
mV/°C
gfe
—
12
—
Mhos
Cies
—
1003
—
pF
Coes
—
126
—
Cres
—
106
—
td(on)
—
74
—
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
Vdc
mV/°C
µAdc
nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 10 Adc)
VCE(on)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
tr
—
83
—
td(off)
—
76
—
tf
—
231
—
Eoff
—
0.55
1.33
Turn–On Switching Loss
Eon
—
1.21
1.88
Total Switching Loss
Ets
—
1.76
3.21
Turn–On Delay Time
td(on)
—
66
—
tr
—
87
—
td(off)
—
120
—
tf
—
575
—
Eoff
—
1.49
—
Turn–On Switching Loss
Eon
—
2.37
—
Total Switching Loss
Ets
—
3.86
—
QT
—
29
—
Q1
—
13
—
Q2
—
12
—
—
—
—
2.26
1.37
2.86
3.32
—
4.18
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
(VCC = 720 Vdc,
Vd IC = 10 Ad
Adc,
VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 Ω)
Energy losses include “tail”
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
(VCC = 720 Vdc,
Vd IC = 10 Ad
Adc,
VGE = 15 Vdc,
Vd L = 300 mH
RG = 20 Ω, TJ = 125°C)
125 C)
Energy losses include “tail”
Gate Charge
Vdc IC = 10 Adc
(VCC = 720 Vdc,
Adc,
VGE = 15 Vdc)
ns
mJ
ns
mJ
nC
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 5.0 Adc)
(IEC = 5.0 Adc, TJ = 125°C)
(IEC = 10 Adc)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
VFEC
Vdc
(continued)
Motorola IGBT Device Data
MGW12N120D
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
trr
—
116
—
ns
ta
—
69
—
tb
—
47
—
QRR
—
0.36
—
µC
trr
—
234
—
ns
ta
—
149
—
tb
—
85
—
QRR
—
1.40
—
—
13
—
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
((IF = 10 Adc,
Ad , VR = 720 Vd
Vdc,,
dIF/dt = 100 A/µs)
Reverse Recovery Stored Charge
Reverse Recovery Time
((IF = 10 Adc,
Ad , VR = 720 Vd
Vdc,,
dIF/dt = 100 A/µs, TJ = 125°C)
Reverse Recovery Stored Charge
µC
INTERNAL PACKAGE INDUCTANCE
LE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
nH
TYPICAL ELECTRICAL CHARACTERISTICS
40
TJ = 125°C
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
40
VGE = 20 V
TJ = 25°C
30
17.5 V
20
15 V
12.5 V
10
VGE = 20 V
30
17.5 V
20
15 V
12.5 V
10
7.5 V
0
0
1
2
3
5
4
7
6
10 V
0
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1
IC, COLLECTOR CURRENT (AMPS)
24
VCE = 10 V
250 µs PULSE WIDTH
16
TJ = 125°C
12
8
25°C
4
0
5
7
9
11
13
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
Motorola IGBT Device Data
3
5
4
6
7
8
Figure 2. Output Characteristics
15
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
20
2
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
3.8
3.6
IC = 10 A
3.4
3.2
7.5 A
3.0
2.8
2.6
5A
2.4
2.2
2
– 50
VGE = 15 V
250 µs PULSE WIDTH
– 25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
3
MGW12N120D
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
1600
TJ = 25°C
VGE = 0 V
C, CAPACITANCE (pF)
1200
Cies
800
400
Coes
Cres
0
0
5
10
15
20
16
QT
12
Q1
8
4
0
25
TJ = 25°C
IC = 10 A
VGE = 15 V
0
10
5
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
20
30
25
35
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
3
VCC = 720 V
VGE = 15 V
TJ = 125°C
2.5
Eon , TURN–ON ENERGY LOSSES (mJ)
3
Eon , TURN–ON ENERGY LOSSES (mJ)
15
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
IC = 10 A
2
7.5 A
1.5
5A
1
Q2
10
20
30
40
50
VCC = 720 V
VGE = 15 V
RG = 20 Ω
2.6
2.2
IC = 10 A
1.8
7.5 A
1.4
5A
1
0.6
0.2
0
50
25
75
100
125
RG, GATE RESISTANCE (OHMS)
TC, CASE TEMPERATURE (°C)
Figure 7. Turn–On Losses versus
Gate Resistance
Figure 8. Turn–On Losses versus
Case Temperature
150
Eon , TURN–ON ENERGY LOSSES (mJ)
2.4
VCC = 720 V
VGE = 15 V
RG = 20 Ω
TJ = 125°C
2.2
2
1.8
1.6
1.4
1.2
1
5
6
7
8
9
10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Turn–On Losses versus
Collector Current
4
Motorola IGBT Device Data
25
100
IC, COLLECTOR CURRENT (AMPS)
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
MGW12N120D
20
TJ = 125°C
15
10
25°C
5
0
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
0
1
2
3
4
1
10
1000
100
10,000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage Drop
Figure 11. Reverse Biased
Safe Operating Area
1.0
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E+00
1.0E+01
t, TIME (s)
Figure 12. Thermal Response
Motorola IGBT Device Data
5
MGW12N120D
PACKAGE DIMENSIONS
0.25 (0.010)
M
–T–
–Q–
T B M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
–B–
C
4
L
U
A
R
1
K
2
3
–Y–
P
V
H
F
G
D
0.25 (0.010)
M
Y Q
J
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
MILLIMETERS
MIN
MAX
19.7
20.3
15.3
15.9
4.7
5.3
1.0
1.4
1.27 REF
2.0
2.4
5.5 BSC
2.2
2.6
0.4
0.8
14.2
14.8
5.5 NOM
3.7
4.3
3.55
3.65
5.0 NOM
5.5 BSC
3.0
3.4
STYLE 4:
PIN 1.
2.
3.
4.
S
INCHES
MIN
MAX
0.776
0.799
0.602
0.626
0.185
0.209
0.039
0.055
0.050 REF
0.079
0.094
0.216 BSC
0.087
0.102
0.016
0.031
0.559
0.583
0.217 NOM
0.146
0.169
0.140
0.144
0.197 NOM
0.217 BSC
0.118
0.134
GATE
COLLECTOR
EMITTER
COLLECTOR
CASE 340K–01
TO–247AE
ISSUE A
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6
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MGW12N120D/D
Motorola IGBT
Device Data