MJL4281A (NPN) MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBase power transistors for high power audio. • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary: • • • Gain Linearity from 100 mA to 5 A High Gain − 80 to 240 hFE = 50 (min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area − 1.0 A/100 V @ 1 Second High fT http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS 230 WATTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO 350 Vdc Collector−Base Voltage VCBO 350 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 350 Vdc Collector Current − Continuous Collector Current − Peak (Note 1) IC 15 30 Adc Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 230 1.84 Watts °C/W TJ, Tstg − 65 to +150 °C Symbol Max Unit RJC 0.54 °C/W Rating Operating and Storage Junction Temperature Range 1 2 Thermal Resistance, Junction to Case TO−264 CASE 340G STYLE 2 MARKING DIAGRAM MJL 4xxxA LLYWW THERMAL CHARACTERISTICS Characteristic 3 1 BASE 3 EMITTER 2 COLLECTOR MJL4xxxA xxx LL Y WW 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. = Device Code = 281 OR 302 = Location Code = Year = Work Week ORDERING INFORMATION Device Package Shipping MJL4281A TO−264 25 Units/Rail MJL4302A TO−264 25 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 July, 2003 − Rev. 1 1 Publication Order Number: MJL4281A/D MJL4281A (NPN) MJL4302A (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min VCE(sus) 350 Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (IC = 50 mA, IB = 0) Collector Cut−off Current (VCE = 200 V, IB = 0) ICEO Collector Cutoff Current (VCB = 350 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc 100 Adc Adc − 50 − 5.0 4.5 1.0 − − 80 80 80 80 50 10 250 250 250 250 − − − 1.0 − 1.4 − 1.5 35 − − 600 Adc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1.0 s (non−repetitive) (VCE = 100 Vdc, t = 1.0 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 3.0 Adc, VCE = 5.0 Vdc) (IC = 5.0 Adc, VCE = 5.0 Vdc) (IC = 8.0 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc) VCE(sat) Emitter−Base Saturation Voltage (IC = 8.0 Adc, IB = 0.8 A) VBE(sat) Base−Emitter ON Voltage (IC = 8.0 Adc, VCE = 5.0 Vdc) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz) MHz Cob http://onsemi.com 2 pF MJL4281A (NPN) MJL4302A (PNP) TYPICAL CHARACTERISTICS 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 TJ = 100°C 100 TJ = 25°C 0.1 1 10 100 0.01 10 100 IC, COLLECTOR CURRENT (A) 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TJ = 25°C 0.1 1 10 TJ = 100°C 100 10 0.01 100 TJ = 25°C 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain, VCE = 20 V, NPN MJL4281A Figure 4. DC Current Gain, VCE = 20 V, PNP MJL4302A 2.0 1.8 1.2 SATURATION VOLTAGE (V) SATURATION VOLTAGE (V) 1 Figure 2. DC Current Gain, VCE = 5 V, PNP MJL4302A 1.4 1 0.8 Vbe(sat) 0.6 0.4 Vce(sat) 0.2 0 0.01 0.1 IC, COLLECTOR CURRENT (A) TJ = 100°C 10 0.01 TJ = 25°C Figure 1. DC Current Gain, VCE = 5 V, NPN MJL4281A 1000 100 100 10 10 0.01 TJ = 100°C 0.1 1 TJ = 25°C Ic/Ib = 10 10 1.6 1.4 1.2 1.0 Vbe(sat) 0.8 0.6 0.4 Vce(sat) 0.2 100 0.0 0.01 0.1 1 TJ = 25°C Ic/Ib = 10 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Typical Saturation Voltage, NPN MJL4281A Figure 6. Typical Saturation Voltage, PNP MJL4302A http://onsemi.com 3 100 MJL4281A (NPN) MJL4302A (PNP) TYPICAL CHARACTERISTICS 2.5 VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 fT, CURRENT BANDWIDTH PRODUCT (MHz) 0.0 0.01 0.1 1 10 100 1.0 0.5 0.0 0.01 0.1 1 10 Figure 7. Typical Base−Emitter Voltages, NPN MJL4281A Figure 8. Typical Base−Emitter Voltages, PNP MJL4302A 60 VCE = 5 V 50 40 VCE = 10 V 30 20 TJ = 25°C ftest = 1 MHz 0 1.5 IC, COLLECTOR CURRENT (A) 70 10 2.0 IC, COLLECTOR CURRENT (A) 0.1 1 10 fT, CURRENT BANDWIDTH PRODUCT (MHz) VBE(on), BASE−EMITTER VOLTAGE (V) 1.4 100 70 60 VCE = 5 V 50 VCE = 10 V 40 30 20 10 TJ = 25°C ftest = 1 MHz 0 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 9. Typical Current Gain Bandwidth Product, NPN MJL4281A Figure 10. Typical Current Gain Bandwidth Product, PNP MJL4302A 100 10 mS IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 100 10 1 Sec 1 100 mS 0.1 TJ = 25°C 0.01 1 10 mS 10 1 Sec 1 100 mS 0.1 TJ = 25°C 0.01 10 100 1000 1 Vce, COLLECTOR−EMITTER VOLTAGE (V) 10 100 1000 Vce, COLLECTOR−EMITTER VOLTAGE (V) Figure 11. Active Region Safe Operating Area, NPN MJL4281A Figure 12. Active Region Safe Operating Area, PNP MJL4302A http://onsemi.com 4 MJL4281A (NPN) MJL4302A (PNP) PACKAGE DIMENSIONS TO−3PBL (TO−264) CASE 340G−02 ISSUE H 0.25 (0.010) M T B M −Q− −B− −T− C E U N A 1 R 2 L 3 −Y− P K W F 2 PL G J H D 3 PL 0.25 (0.010) M Y Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER S http://onsemi.com 5 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 MJL4281A (NPN) MJL4302A (PNP) PowerBase is a trademark of Semiconductor Components Industries, LLC. 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