DISCRETE SEMICONDUCTORS DATA SHEET MX1011B200Y Microwave power transistor Product specification Supersedes data of January 1995 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency MX1011B200Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION CONDITIONS tp = 10 µs; δ = 1% Class C f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) 1.09 50 200 ≥7.5 ≥45 PINNING - SOT439A • Gold metallization with barrier realizes very stable characteristics and excellent lifetime PIN 1 collector • Multicell geometry improves power sharing reduces thermal resistance 2 emitter 3 base connected to flange DESCRIPTION • Internal input and output prematching networks allow an easier design of circuits. APPLICATIONS Intended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz bandwidth. Also suitable for medium pulse, heavy duty operation within the 1030 MHz to 1150 MHz bandwidth. 1 ok, 4 columns c b 3 3 e 2 MAM045 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification Microwave power transistor MX1011B200Y LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCES collector-emitter voltage RBE = 0 − 65 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V ICM peak collector current tp = 10 µs; δ = 1% − 11.5 A Ptot total power dissipation Tmb < 75 °C; tp ≤ 10 µs; δ ≤ 1% − 515 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MLC465 600 handbook, halfpage P tot (W) 400 200 0 50 0 50 100 150 200 o T mb ( C) tp = 10 µs; δ = 1%. Fig.2 Power derating curve. 1997 Feb 18 3 Philips Semiconductors Product specification Microwave power transistor MX1011B200Y THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT 2.5 K/W 0.2 K/W 0.16 K/W Tj = 120 °C Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink note 1 Zth thermal impedance from junction to heatsink tp = 10 µs; δ = 1%; notes 1 and 2 Notes 1. See “Mounting recommendations in the General part of handbook SC19a”. 2. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 50 V 6 mA ICES collector cut-off current VBE = 0; VCE = 50 V 6 mA IEBO emitter cut-off current IC = 0; VEB = 1.5 V 1.5 mA V(BR)CBO collector-base breakdown voltage IC = 40 mA 65 V V(BR)CES collector-emitter breakdown voltage IC = 40 mA; VBE = 0 65 V APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common-base test circuit as shown in Fig.3. MODE OF OPERATION CONDITIONS tp = 10 µs; δ = 1% tp = 0.5 µs; δ = 50% Class C tp = 112 µs; δ = 1% tp = 6.6 µs; δ = 51% tp = 3.3 µs; δ = 43% tp = 32 µs; δ = 1% 1997 Feb 18 f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) 1.09 50 ≥200 typ. 220 ≥7.5 typ. 8.3 ≥45 typ. 52 1.03 to 1.09 50 typ. 220 typ. 7.5 typ. 50 1.03 to 1.15 50 typ. 100 typ. 6 typ. 35 1.09 50 typ. 210 typ. 7.5 typ. 47 4 Philips Semiconductors Product specification Microwave power transistor MX1011B200Y 30 handbook, full pagewidth 30 19.0 3.0 5.0 3.0 6.0 4.0 2.3 11.5 2.7 40 9.5 1 2.5 40 2.8 0.64 0.64 8.0 9.5 10.0 C3 VCC C4 C2 L1 L3 input output C1 L2 C5 MLC464 Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.3 Broadband test circuit. 1997 Feb 18 5 Philips Semiconductors Product specification Microwave power transistor MX1011B200Y List of components (see Fig.3) COMPONENT DESCRIPTION VALUE ORDERING INFORMATION C1 capacitor 100 pF ATC 100A101kp50x C2 tantalum capacitor 10 µF; 50 V − C3 electrolytic capacitor 63 V; 1000 µF − C4 feedthrough bypass capacitor − Erie1250-003 C5 variable gigatrim capacitor 0.8 to 8 pF Tekelec 729-1 L1, L2 0.65 mm copper wire; total length = 26 mm; height of loop = 10 mm − − L3 0.85 mm silver wire; total length = 30 mm; height of loop = 15 mm − − MLC466 250 PL (W) MLC467 55 handbook, halfpage handbook, halfpage ηc (%) 230 50 210 190 45 170 150 40 15 25 35 P i (W) 45 15 35 P i (W) 45 Class C pulse operation. tp = 10 µs; δ = 1%; VCC = 50 V; f = 1.09 GHz. In broadband test circuit as shown in Fig.3. Class C pulse operation. tp = 10 µs; δ = 1%; VCC = 50 V; f = 1.09 GHz. In broadband test circuit as shown in Fig.3. Fig.5 Fig.4 Load power as a function of input power. 1997 Feb 18 25 6 Collector efficiency as a function of input power. Philips Semiconductors Product specification Microwave power transistor MX1011B200Y 1 handbook, full pagewidth 0.5 2 0.2 Zi +j 0.2 0 5 1.03 GHz 0.5 1.09 GHz 1.15 GHz 2 10 5 ∞ 10 –j 10 5 0.2 2 0.5 MLC468 1 VCC = 50 V; Zo = 10 Ω; Po = 240 W. Fig.6 Input impedance as a function of frequency. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 0.2 0.5 2 5 ∞ 10 1.09 GHz 1.15 GHz 10 1.03 GHz ZL 5 0.2 2 0.5 1 MLC469 VCC = 50 V; Zo = 50 Ω; Po = 240 W. Fig.7 Optimum load impedance as a function of frequency. 1997 Feb 18 7 Philips Semiconductors Product specification Microwave power transistor MX1011B200Y PACKAGE OUTLINE 12.85 max handbook, full pagewidth 0.15 max 6 max 3.3 2.9 1.6 max 3 23 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 2.7 min 2 MBC881 8.25 16.5 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. Fig.8 SOT439A 1997 Feb 18 8 10.3 10.0 Philips Semiconductors Product specification Microwave power transistor MX1011B200Y DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 9 Philips Semiconductors Product specification Microwave power transistor MX1011B200Y NOTES 1997 Feb 18 10 Philips Semiconductors Product specification Microwave power transistor MX1011B200Y NOTES 1997 Feb 18 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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