DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms/10% • Internal input prematching networks allow an easier design of circuits • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance. RX1214B350Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION CONDITIONS tp = 130 µs; δ = 6% Class C f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) 1.2 to 1.4 50 280 ≥7 ≥40 PINNING - SOT439A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange APPLICATIONS Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.4 GHz band. Also suitable for medium pulse, heavy duty operation within this band. 1 handbook, 4 columns c b 3 3 e 2 MAM045 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 20 V VCES collector-emitter voltage RBE = 0 Ω − 65 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) tp ≤ 130 µs; δ ≤ 6% − 25 A Ptot total power dissipation Tmb < 75 °C; tp ≤ 30 µs; δ ≤ 1% − 750 W Tstg storage temperature −65 200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MGA259 800 handbook, halfpage Ptot (W) 600 400 200 0 –100 0 100 200 300 Tamb (oC) Ptot max = 750 W; tp ≤ 30 µs; δ ≤ 1%. Fig.2 Maximum power dissipation derating as a function of mounting base temperature. 1997 Feb 18 3 Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Tj = 120 °C Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink note 1 Zth j-h thermal impedance from junction to heatsink tp = 130 µs; δ = 6%; Tj = 110 °C; notes 1 and 2 MAX. UNIT 1.2 K/W 0.2 K/W 0.17 K/W MAX. UNIT Notes 1. See “Mounting recommendations in the General part of handbook SC19a”. 2. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS ICBO collector cut-off current VCB = 50 V; IE = 0 30 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 3 mA APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common base test circuit as shown in Fig.3. MODE OF OPERATION Class C CONDITIONS tp = 130 µs; δ = 6%; note 2 VCC (V) note 1 f (GHz) 1.2 to 1.4 50 PL (W) 280 Gp (dB) ≥7; typ. 8 Notes 1. VCC during pulse. 2. Operating conditions and performances for other pulse formats can be made available on request. 1997 Feb 18 4 ηC (%) ≥40; typ. 44 Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y 30 mm handbook, full pagewidth 4 1 2 30 mm 10.5 7 10 4 1 12.5 8 40 mm 40 mm 2.5 0.6 2.5 4 12 12 MBC721 handbook, full pagewidth VCC VCC C3 C4 C2 C6 L3 L1 input output R1 C1 L2 C5 MBC722 10.3 Fig.3 Broadband test circuit. 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y List of components (see Fig.3) COMPONENT DESCRIPTION VALUE DIMENSIONS L1, L2, L3 3 turns 0.65 mm diameter copper wire C1 capacitor 100 pF C2 tantalum capacitor 10 µF, 50 V 470 µF, 63 V CATALOGUE NO. int dia. = 4 mm; length of turn = 3 mm ATC, ref. 100B101KP50X C3 electrolytic capacitor C4 feedthrough bypass capacitor C5 variable gigatrim capacitor 0.8 - 8 pF C6 capacitor 4.7 nF R1 resistor 4.7 Ω Erie, ref.1250-003 Tekelec, ref.729.1 The test jig consists of two circuits (input and output), each being 30 mm x 40 mm in size. The two circuits are mounted on a 10 mm thick hard aluminium alloy block. A recess should be machined in the aluminium block in which the transistor can be mounted. The mounting surface must be lapped to a surface roughness of Ra <0.5 µm and the sum of the depth of the recess and the thickness of the circuits should not exceed the specified minimum dimension between mounting face and the leads of the transistor. Tolerances on this dimension may be absorbed by placing a gold plated metal shim under the leads, close to the body of the transistor. MGA261 MGA260 handbook,10 halfpage handbook,50 halfpage Gp (dB) ηC 8 48 6 46 4 44 2 42 0 1.1 (%) 1.2 1.3 1.4 40 1.1 1.5 1.2 1.3 f (GHz) 1.4 1.5 f (GHz) Class C pulse operation; tp = 130 µs; δ = 6%. VCC = 50 V; PO = 280 W. Broadband test circuit as shown in Fig.3. Class C pulse operation; tp = 130 µs; δ = 6%. VCC = 50 V; PO = 280 W. Broadband test circuit as shown in Fig.3. Fig.5 Fig.4 Power gain as a function of frequency. 1997 Feb 18 6 Collector efficiency as a function of frequency. Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y 1 handbook, full pagewidth 0.5 2 1.2 GHz Zi 1.3 GHz 0.2 5 1.4 GHz 10 +j 0.2 0 0.5 1 2 5 ∞ 10 –j 10 5 0.2 2 0.5 MBC918 1 VCC = 50 V; ZO = 5 Ω; PO = 280 W. Fig.6 Input impedance as a function of frequency, associated with optimum load impedance. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 1 0.5 2 5 ∞ 10 –j 10 ZL 1.3 GHz 0.2 1.4 GHz 5 1.2 GHz 2 0.5 MBC919 1 VCC = 50 V; ZO = 5 Ω; PO = 280 W. Fig.7 Optimum load impedance as a function of frequency, associated with input impedance. 1997 Feb 18 7 Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y PACKAGE OUTLINE 12.85 max handbook, full pagewidth 0.15 max 6 max 3.3 2.9 1.6 max 3 23 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 2.7 min 2 MBC881 8.25 16.5 Dimensions in mm. Torque on nut: max 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screw: 19 mm. Fig.8 SOT439A. 1997 Feb 18 8 10.3 10.0 Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 9 Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y NOTES 1997 Feb 18 10 Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y NOTES 1997 Feb 18 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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