Order this document by MCR08BT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. • • • • • SCR 0.8 AMPERE RMS 200 thru 600 Volts Sensitive Gate Trigger Current Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Devices Supplied on 1 K Reel CASE 318E-04 (SOT-223) STYLE 10 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Forward and Reverse Blocking Voltage(1) (1/2 Sine Wave, RGK = 1000 Ω, TJ = 25 to 110°C) Value VDRM, VRRM Volts 200 400 600 MCR08BT1 MCR08DT1 MCR08MT1 On-State Current RMS (TC = 80°C) Unit IT(RMS) 0.8 Amps ITSM 10 Amps I2t 0.4 A2s PGM 0.1 Watts PG(AV) 0.01 Watts TJ –40 to +110 °C Tstg –40 to +150 °C TL 260 °C Symbol Max Unit Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 RθJA 156 °C/W Thermal Resistance, Junction to Tab Measured on Anode Tab Adjacent to Epoxy RθJT 25 °C/W Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 25°C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power, Forward, TA = 25°C Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) THERMAL CHARACTERISTICS Characteristic 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1 KΩ) Characteristic Symbol Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 1000 Ω) Min Typ Max Unit — — — — 10 200 µA µA IDRM, IRRM TJ = 25°C TJ = 110°C Maximum On-State Voltage (Either Direction)* (IT = 1.0 A Peak, TA = 25°C) VTM — — 1.7 Volts Gate Trigger Current (Continuous dc) (Anode Voltage = 7.0 Vdc, RL = 100 Ω) IGT — — 200 µA IH — — 5.0 mA Gate Trigger Voltage (Continuous dc) (Anode Voltage = 7.0 Vdc, RL = 100 Ω) VGT — — 0.8 Volts Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110°C, RGK = 1000 Ω, Exponential Method) dv/dt 10 — — V/µs Holding Current (VD = 7.0 Vdc, Initializing Current = 20 mA, RGK = 1000 Ω) * Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 0.15 3.8 0.079 2.0 0.091 2.3 0.091 2.3 0.244 6.2 0.079 2.0 0.059 1.5 0.984 25.0 0.059 1.5 0.059 1.5 0.096 2.44 0.096 2.44 0.059 1.5 ǒinchesǓ mm BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 2 Motorola Thyristor Device Data 1.0 0.1 TYPICAL AT TJ = 110°C MAX AT TJ = 110°C MAX AT TJ = 25°C 0.01 1.0 0 2.0 R θJA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ( °C/W) 10 4.0 3.0 110 100 50 OR 60 Hz HALFWAVE 90 α α = CONDUCTION ANGLE 80 dc 70 180° 60 120° α = 30° 40 60° 0 90° 0.1 0.2 MINIMUM FOOTPRINT = 0.076 cm2 0 0.4 0.3 3.0 4.0 5.0 6.0 7.0 8.0 9.0 dc 90 180° 80 120° 70 α = 30° 60 60° 50 40 20 0.5 90° α CONDUCTION ANGLE 0 0.1 0.2 0.3 0.4 0.5 Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 PAD AREA = 4.0 cm2, 50 OR 60 Hz HALFWAVE T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE ( ° C) 120° 60° 70 90° α 180° 120° α = 30° 60° 90° α α = CONDUCTION α = CONDUCTION ANGLE ANGLE 0.1 50 OR 60 Hz HALFWAVE dc 180° α = 30° 10 1.0 cm2 FOIL, 50 OR 60 Hz HALFWAVE Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature dc 0 2.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 90 50 1.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 100 60 1 2 3 30 α = 110 80 L 4 Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area 110 20 DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN Figure 2. On-State Characteristics 100 50 L TYPICAL MAXIMUM FOIL AREA (cm2) 30 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) 160 150 140 130 120 110 100 90 80 70 60 50 40 30 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 0.2 0.3 0.4 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature Motorola Thyristor Device Data 0.5 85 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 7. Current Derating Reference: Anode Tab 3 1.0 MAXIMUM AVERAGE POWER P(AV),DISSIPATION (WATTS) 0.9 α 0.8 α = 0.7 r T , TRANSIENT THERMAL RESISTANCE NORMALIZED 1.0 α = 30° CONDUCTION ANGLE 60° 0.6 90° 0.5 0.4 dc 0.3 180° 0.2 120° 0.1 0 0 0.1 0.2 0.4 0.3 0.1 0.01 0.0001 0.5 0.001 0.5 0.4 –20 0 20 40 60 80 I H , HOLDING CURRENT (NORMALIZED) VGT , GATE TRIGGER VOLTAGE (VOLTS) VAK = 7.0 V RL = 140 Ω RGK = 1.0 kΩ 0.6 VAK = 7.0 V RL = 3.0 k RGK = 1.0 k 1.0 0 –40 110 –20 0 20 40 60 80 110 TJ, JUNCTION TEMPERATURE, (°C) Figure 11. Typical Normalized Holding Current versus Junction Temperature Figure 10. Typical Gate Trigger Voltage versus Junction Temperature 1000 I GT , GATE TRIGGER CURRENT ( µA) 0.7 V GT , GATE TRIGGER VOLTAGE (VOLTS) 100 2.0 0.7 TJ, JUNCTION TEMPERATURE, (°C) 0.65 0.6 RGK = 1000 Ω, RESISTOR CURRENT INCLUDED 100 0.55 0.5 VAK = 7.0 V RL = 140 Ω TJ = 25°C 0.45 0.4 0.35 1.0 10 100 IGT, GATE TRIGGER CURRENT (µA) Figure 12. Typical Range of VGT versus Measured IGT 4 10 Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board Figure 8. Power Dissipation 0.3 0.1 1.0 t, TIME (SECONDS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 0.3 –40 0.1 0.01 1000 VAK = 7.0 V RL = 140 Ω WITHOUT GATE RESISTOR 10 1.0 –40 –20 0 20 40 60 80 110 TJ, JUNCTION TEMPERATURE (°C) Figure 13. Typical Gate Trigger Current versus Junction Temperature Motorola Thyristor Device Data 10000 100 IGT = 48 µA 10 Vpk = 400 V 1000 STATIC dv/dt (V/ µS) IH , HOLDING CURRENT (mA) 5000 TJ = 25°C IGT = 7 µA 1.0 500 100 TJ = 25° 50 10 125° 5.0 50° 110° 1.0 75° 0.5 0.1 1.0 10 1000 10,000 0.1 10 100 1000 10,000 100,000 RGK, GATE-CATHODE RESISTANCE (OHMS) Figure 14. Holding Current Range versus Gate-Cathode Resistance Figure 15. Exponential Static dv/dt versus Junction Temperature and Gate-Cathode Termination Resistance 10000 300 V 1000 TJ = 110°C 1000 200 V 500 100,000 RGK, GATE-CATHODE RESISTANCE (OHMS) 10000 100 V TJ = 110°C 400 V (PEAK) 500 400 V 100 STATIC dv/dt (V/ µS) STATIC dv/dt (V/ µS) 100 50 V 50 500 V 10 5.0 100 RGK = 100 50 10 RGK = 1.0 k 5.0 1.0 10 100 1000 10,000 RGK = 10 k 1.0 0.01 0.1 1.0 10 RGK, GATE-CATHODE RESISTANCE (OHMS) CGK, GATE-CATHODE CAPACITANCE (nF) Figure 16. Exponential Static dv/dt versus Peak Voltage and Gate-Cathode Termination Resistance Figure 17. Exponential Static dv/dt versus Gate-Cathode Capacitance and Resistance 100 10000 1000 STATIC dv/dt (V/ µS) 500 100 50 IGT = 70 µA 10 IGT = 5 µA IGT = 35 µA 5.0 1.0 10 100 IGT = 15 µA 1000 10,000 100,000 GATE-CATHODE RESISTANCE (OHMS) Figure 18. Exponential Static dv/dt versus Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity Motorola Thyristor Device Data 5 PACKAGE DIMENSIONS A F STYLE 10: PIN 1. 2. 3. 4. 4 S B 1 2 3 NOTES: 2 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION: INCH. CATHODE ANODE GATE ANODE D L G J C 0.08 (0003) M H INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 K CASE 318E-04 (SOT–223) Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ Motorola Thyristor Device Data *MCR08BT1/D* MCR08BT1/D