Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA ! 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE(on) = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability C G G C E CASE 221A–09 STYLE 9 TO–220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES CLAMPED Vdc Collector–Gate Voltage VCGR CLAMPED Vdc Gate–Emitter Voltage VGE CLAMPED Vdc Collector Current — Continuous Collector Current — Single Pulsed (tp = IC ICM 20 60 Adc Apk PD 150 1.0 Watts W/°C TJ, Tstg – 55 to 175 °C "10 ms) Total Power Dissipation (TO–220) Derate Above 25°C Operating and Storage Temperature Range Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C (VCC = 80 V, VGE = 5 V, Peak IL = 10 A, L = 10 mH) EAS mJ 500 THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – (TO–220) Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw RqJC RqJA 1.0 62.5 °C/W TL 260 °C 10 lbfin (1.13 Nm) SMARTDISCRETES is a trademark of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. REV 2 TMOS Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MGP20N14CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Clamp Voltage (IClamp = 10 mA, TJ = –40 to 150°C) V(BR)CES Vdc 135 Zero Gate Voltage Collector Current (VCE = 100 V, VGE = 0 V) (VCE = 100 V, VGE = 0 V, TJ = 150°C) ICES Gate–Emitter Clamp Voltage (IG = 1 mA) V(BR)GES 10 IGES — — 1.0 1.0 1.5 4.4 2.0 Gate–Emitter Leakage Current (VGE = — — "5 V, VCE = 0 V) — — 10 100 mA Vdc mA ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE, IC = 1 mA) Threshold Temperature Coefficient (Negative) VGE(th) Collector–Emitter On–Voltage (VGE = 5 V, IC = 10 A) (VGE = 5 V, IC = 10 Adc, TJ = 175°C) VCE(on) Forward Transconductance (VCE u 15 V, IC = 10 A) V mV/°C V — — 1.9 1.8 gfe 8.0 15 — Mhos Cies — 430 600 pF Coes — 182 250 Cres — 48 100 td(on) — TBD TBD tr — TBD TBD td(off) — TBD TBD tf — TBD TBD QT — 14 20 Qge — 3.0 — Qgc — 6.0 — DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time ((VCC = 68 V, V, IC = 20 A, A, VGE = 5 V, RG = 9.1 W) Fall Time Total Gate Charge Gate–Emitter Charge (VCC = 108 V, V IC = 20 A, A VGE = 5 V) Gate–Collector Charge ns nC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N14CL PACKAGE DIMENSIONS –T– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C T S 4 A Q 1 2 3 STYLE 9: PIN 1. 2. 3. 4. U H K Z L R V J G D N GATE COLLECTOR EMITTER COLLECTOR DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A–09 ISSUE Z Motorola TMOS Power MOSFET Transistor Device Data 3 MGP20N14CL Motorola reserves the right to make changes without further notice to any products herein. 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