MOTOROLA VN2222LL

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by VN2222LL/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel — Enhancement
3 DRAIN
Motorola Preferred Device
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
VGS
VGSM
± 20
± 40
Vdc
Vpk
ID
IDM
150
1000
PD
400
3.2
mW
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
312.5
°C/W
TL
300
°C
Drain Current
Continuous
Pulsed
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
mAdc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
THERMAL CHARACTERISTICS
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)DSS
60
—
Vdc
—
—
10
500
IGSSF
—
–100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.6
2.5
Vdc
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C)
rDS(on)
—
—
7.5
13.5
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 µAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward
(VGSF = 30 Vdc, VDS = 0)
µAdc
IDSS
ON CHARACTERISTICS(1)
1. Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2.0%.
Ω
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
VN2222LL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
—
—
1.5
3.75
ID(on)
750
—
mA
gfs
100
—
µmhos
Ciss
—
60
pF
Coss
—
25
Crss
—
5.0
ton
—
10
toff
—
10
ON CHARACTERISTICS(1) (Continued)
Drain–Source On–Voltage
(VGS = 5.0 Vdc, ID = 200 mAdc)
(VGS = 10 Vdc, ID = 500 mAdc)
VDS(on)
On–State Drain Current
(VGS = 10 Vdc, VDS ≥ 2.0 VDS(on))
Forward Transconductance
(VDS = 10 Vdc, ID = 500 mAdc)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc,
Vdc VGS = 0,
0
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS(1)
Turn–On Delay Time
Turn–Off Delay Time
1. Pulse Test: Pulse Width
2
((VDD = 15 Vdc,, ID = 600 mA,,
Rgen = 25 Ω, RL = 23 Ω)
v 300 µs, Duty Cycle v 2.0%.
ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
VN2222LL
1
2
I D, DRAIN CURRENT (AMPS)
1.6
I D, DRAIN CURRENT (AMPS)
TA = 25°C
1.8
VGS = 10 V
9V
1.4
1.2
8V
1
7V
0.8
0.6
6V
0.4
5V
0.2
4V
25°C
VDS = 10 V
0.8
– 55°C
125°C
0.6
0.4
0.2
3V
1
2
3
4
5
6
7
8
9
3
4
5
6
7
8
Figure 2. Transfer Characteristics
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1
0.8
0.6
0.4
–60
2
Figure 1. Ohmic Region
2.2
1.8
1
VGS, GATE – SOURCE VOLTAGE (VOLTS)
2.4
2
0
10
VDS, DRAIN– SOURCE VOLTAGE (VOLTS)
–20
+20
+60
T, TEMPERATURE (°C)
+100
+140
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN–SOURCE ON–RESISTANCE
(NORMALIZED)
0
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
9
10
1.2
1.15
VDS = VGS
ID = 1 mA
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
–60
–20
0
+20
+60
T, TEMPERATURE (°C)
+100
+140
Figure 4. Temperature versus Gate
Threshold Voltage
3
VN2222LL
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
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4
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VN2222L/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data