polyfet rf devices F1001C General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance 20 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance Maximum Junction Temperature 3.13 o C/W 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 2 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gain η Drain Efficiency VSWR MIN TYP Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 20WATTS OUTPUT ) MAX 16 60 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz % Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz Relative Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current Igss Gate Leakage Current Vgs Gate Bias for Drain Current gM Forward Transconductance Rdson Saturation Resistance Idsat MIN TYP MAX 65 1 UNITS TEST CONDITIONS V Ids = 0.05 A, Vgs = 0V 1 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.1 A, Vgs = Vds 0.8 Mho Vds = 10V, Vgs = 5V 1 Ohm Vgs = 20V, Ids = 4 A Saturation Current 5.5 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 33 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 4 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1001C POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1001C POUT vs PIN IDQ=0.1A; F=175 MHZ VDS=28V F1B 1 DIE Capacitance vs Vds 35 20 18 25 17 20 16 15 15 14 10 13 Efficiency = 75% Coss GAIN IN dB POUT IN WATTS 100 19 30 Ciss 10 Crss 12 5 11 0 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 1 PIN IN WATTS 0 POUT 5 10 15 20 25 30 VDS IN VOLTS GAIN IV CURVE ID AND GM VS VGS F1B 1DIE IV CURVE F1B 1 DIE GM & ID vs VG 6 10 Id 5 4 1 3 2 Gm 0.1 1 0 0 2 4 6 8 10 12 14 16 18 20 0.01 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V S11 AND S22 SMITH CHART Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com