Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 125 W Typical Gain = 10 dB Efficiency = 55% (Typ) 125 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON • Built–In Input Impedance Matching Networks for Broadband Operation • Push–Pull Configuration Reduces Even Numbered Harmonics • Gold Metallization System for High Reliability • 100% Tested for Load Mismatch • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. 2 6 5, 8 1, 4 7 3 CASE 744A–01, STYLE 1 The MRF392 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration. PUSH–PULL TRANSISTORS MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 30 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 16 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 270 1.54 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 0.65 °C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull amplifier. REV 8 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF392 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 5.0 mAdc hFE 40 60 100 — Cob — 75 95 pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz) Gpe 8.0 10 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz) η 50 55 — % Load Mismatch (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz, VSWR = 30:1, all phase angles) ψ OFF CHARACTERISTICS (1) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (2) — See Figure 1 No Degradation in Output Power NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push–pull amplifier. L5 C11 B1 C12 + C13 C14 B2 L3 L1 C15 + 28 V – C9 C1 Z1 Z2 C4 C3 Z1 Z2 Z4 Z3 C5 Z5 C6 Z6 C7 C8 Z3 Z4 C2 Z5 Z6 C10 D.U.T. L2 L4 L6 C16 C1, C2 — 240 pF, 100 Mil Chip Cap (ATC) or Equivalent C3 — 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent C4, C8 — 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent C5, C6 — 20 pF, 100 Mil Chip Cap (ATC) or Equivalent C7 — 18 pF, Mini Unelco or Equivalent C9, C10 — 270 pF, 100 Mil Chip Cap (ATC) or Equivalent C11, C12, C16, C17 — 470 pF 100 Mil Chip Cap (ATC) or Equivalent C13, C18 — 680 pF Feedthru C14, C19 — 0.1 µF Erie Redcap or Equivalent C15 — 20 µF, 50 V L1, L2 — 0.15 µH Molded Choke With Ferrite Bead L3, L4 — 2–1/2 Turns #20 AWG, 0.200 ID L5, L6 — 3–1/2 Turns #18 AWG, 0.200 ID C17 C18 C19 B1 — Balun, 50 Ω Semi–Rigid Coaxial Cable 86 Mil OD, 2″ L B2 — Balun, 50 Ω Semi–Rigid Coaxial Cable 86 Mil OD, 2″ L Z1 — Microstrip Line 270 Mil L x 125 Mil W Z2 — Microstrip Line 375 Mil L x 125 Mil W Z3 — Microstrip Line 280 Mil L x 125 Mil W Z4 — Microstrip Line 300 Mil L x 125 Mil W Z5 — Microstrip Line 350 Mil L x 125 Mil W Z6 — Microstrip Line 365 Mil L x 125 Mil W Board Material — 0.0625″ Teflon Fiberglass εr = 2.5 ± 0.05 1 oz. Cu. Board Material — CLAD, Double Sided Figure 1. 400 MHz Test Fixture MRF392 2 MOTOROLA RF DEVICE DATA 80 f = 100 MHz 140 225 MHz 400 MHz 120 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 160 500 MHz 100 80 60 40 VCC = 28 V 20 0 0 5 10 15 f = 100 MHz 70 225 MHz 400 MHz 60 50 40 30 20 VCC = 13.5 V 10 0 25 20 0 2 4 6 8 10 12 14 16 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power 160 Pin = 14 W 140 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 20 160 Pin = 10 W 7W 120 100 5W 80 60 40 20 0 10 18 Pin, INPUT POWER (WATTS) 14 16 18 20 22 24 26 120 10 W 100 7W 80 60 40 20 f = 225 MHz 12 140 28 f = 400 MHz 0 10 30 12 14 16 18 20 22 24 26 28 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 30 Zin & ZOL* are given from base–to–base and collector–to–collector respectively. f = 100 MHz 225 500 CAPACITIVE REACTANCE COMPONENT (–jX) 400 500 450 Zin INDUCTIVE REACTANCE COMPONENT (+jX) 450 ZOL* 400 225 VCC = 28 V, Pout = 125 W f = 100 MHz Zo = 20 Ω f MHz Zin OHMS ZOL* OHMS 100 225 400 450 500 0.72 + j0.44 0.72 + j2.62 3.88 + j5.72 3.84 + j2.8 1.26 + j3.01 9.0 – j6.0 5.2 – j1.8 3.6 + j0.53 3.2 + j1.2 3.0 + j2.0 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF392 3 PACKAGE DIMENSIONS U Q 0.76 (0.030) M A M 4 PL M B M 1 2 3 K 4 R DIM A B C D E F G H J K L M N Q R U V –B– 5 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 6 7 K 8 4 PL F V 4 PL 2 PL L G –A– J STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. N C H E –T– MILLIMETERS MIN MAX 22.60 23.11 9.52 10.03 6.65 7.16 1.60 1.95 2.94 3.40 2.87 3.22 16.51 BSC 4.01 4.36 0.07 0.15 4.34 4.90 12.45 12.95 45_NOM 1.051 11.02 3.04 3.35 9.90 10.41 1.02 1.27 0.64 0.89 INCHES MIN MAX 0.890 0.910 0.375 0.395 0.262 0.282 0.063 0.077 0.116 0.134 0.113 0.127 0.650 BSC 0.158 0.172 0.003 0.006 0.171 0.193 0.490 0.510 45_NOM 0.414 0.434 0.120 0.132 0.390 0.410 0.040 0.050 0.025 0.035 EMITTER (COMMON) COLLECTOR COLLECTOR EMITTER (COMMON) EMITTER (COMMON) BASE BASE EMITTER (COMMON) SEATING PLANE CASE 744A–01 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF392 4 ◊ *MRF392/D* MRF392/D MOTOROLA RF DEVICE DATA