Order this document by MRF894/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 24 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of 804 – 960 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Power Gain = 7.0 dB Min Efficiency = 55% Min 30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON • Series Equivalent Large–Signal Characterization • Capable of 30:1 VSWR Load Mismatch at Rated Output Power and Supply Voltage • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Silicon Nitride Passivated CASE 319–07, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 7.0 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 115 0.66 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 1.5 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 50 — — Vdc Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 10 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF894 21 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 10 — 120 — Cob — 45 — pF Common–Base Amplifier Power Gain (Pout = 30 W, VCC = 24 Vdc, f = 900 MHz) GPE 7.0 8.5 — dB Collector Efficiency (Pout = 30 W, VCC = 24 Vdc, f = 900 MHz) η 55 60 — % ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS L1 L4 C9 C4 B B SOCKET VRE PORT C1 + ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ TL1 + 24 Vdc SOCKET + C12 C2 ÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ ÇÇÇÇÇ C5 C7 DUT C11 TL2 TL3 C6 B — Ferrite Bead, Ferroxcube 56–590–65–3B C1, C13 — 5.0 µF, 50 Vdc C2, C12 — 1000 pF Unelco C3, C11 — 47 pF, 100 Mil Chip Capacitor C4, C9 — 91 pF, Mini–Underwood C5, C6 — 12 pF, Mini–Underwood C7 — 18 pF, Mini–Underwood C8 — 24 pF, Mini–Underwood C10 — 0.8 – 8.0 pF Johanson Gigatrim ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ L3 L2 C3 C13 C8 TL4 C10 L1, L4 — 11 Turns #20 Enameled Over 10 Ω Carbon Resistor L2, L3 — 4 Turns #20 Enameled, .15″ ID TL1, TL4 — Micro Strip Line, 50 Ω TL2 — Micro Strip, Zo = 30 Ω, λ/4 @ 875 MHz TL3 — Micro Strip, Zo = 22 Ω, λ/4 @ 875 MHz Board — 0.032″ Glass Teflon Board — 2 oz. Cu CLAD, εr = 2.55 Figure 1. 850 – 900 MHz Broadband Circuit Schematic MRF894 22 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 50 900 MHz 30 960 MHz 20 VCC = 24 V 10 0 2 4 6 Pin, INPUT POWER (WATTS) Pin = 8 W 30 6W 20 4W 10 VCC = 24 V 0 10 8 850 Figure 2. Output Power versus Input Power 950 10 Pin = 6 W 30 4W 80 GPB 8 G PB , POWER GAIN (dB) 40 3W 20 4 14 18 22 VCC, SUPPLY VOLTAGE (VOLTS) 26 Figure 4. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA 30 60 VCC = 24 V Pin = 6 W VSWR f = 900 MHz 10 70 ηc 6 2 10 0 900 925 f, FREQUENCY (MHz) Figure 3. Output Power versus Frequency 50 Pout , OUTPUT POWER (WATTS) 875 INPUT VSWR 0 40 0 850 860 870 880 f, FREQUENCY (MHz) η c , COLLECTOR EFFICIENCY 40 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 50 890 1.5:1 50 1.25:1 1:1 900 Figure 5. Typical Broadband Circuit Performance MRF894 23 10 VCC = 24 Vdc, Pout = 30 W 5.0 f = 800 MHz 850 Zin 900 f Frequency MHz Zin Ohms ZOL* Ohms 800 850 900 960 0.9 + j4.5 1.3 + j4.7 1.6 + j4.4 1.5 + j3.7 1.0 + j0.7 1.1 + j0.9 1.2 + j1.1 1.2 + j1.3 960 Zo = 10 Ω ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. 960 900 f = 800 MHz 0 ZOL* 850 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 Figure 6. Series Equivalent Impedance MRF894 24 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q 2 PL -AL IDENTIFICATION NOTCH 6 5 0.15 (0.006) M T A M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 -N1 2 3 DIM A B C D E F H J K L N Q K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M N M T A M M N M J H C E -T- SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 BASE (COMMON) EMITTER (INPUT) BASE (COMMON) BASE (COMMON) COLLECTOR (OUTPUT) BASE (COMMON) CASE 319–07 ISSUE M MOTOROLA RF DEVICE DATA MRF894 25 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF894 26 ◊ *MRF894/D* MRF894/D MOTOROLA RF DEVICE DATA