DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC08b 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. 4 handbook, halfpage APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL DESCRIPTION 1 e emitter 2 b base 3 e emitter 4 c collector Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7). MODE OF OPERATION f (MHz) CW, class-B narrow band 900 1996 May 09 VCE (V) PL (W) Gp (dB) ηC (%) 7.5 1.2 ≥6 ≥60 6 1.2 typ. 6.5 typ. 77 2 Philips Semiconductors Product specification UHF power transistor BLT81 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 9.5 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 500 mA IC(AV) average collector current − 500 mA Ptot total power dissipation − 2 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 175 °C Ts = 110 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ptot = 2 W; Ts = 110 °C; note 1 Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. MRC094 1 handbook, halfpage IC (A) 10−1 1 10 VCE (V) 102 Ts = 110 °C. Fig.2 DC SOAR. 1996 May 09 3 VALUE UNIT 32 K/W Philips Semiconductors Product specification UHF power transistor BLT81 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 1 mA 20 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 9.5 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − − V mA ICES collector leakage current VCE = 10 V; VBE = 0 − − 0.1 hFE DC current gain VCE = 5 V; IC = 300 mA; note 1; 25 − − Cc collector capacitance VCB = 7.5 V; IE = ie = 0; f = 1 MHz; − 2.7 4 pF Cre feedback capacitance VCE = 7.5 V; IC = 0; f = 1 MHz − 1.7 3 pF Note 1. Measured under pulsed conditions: tp ≤ 200 µs; δ ≤ 0.02. MRC090 100 MRC086 6 handbook, halfpage handbook, halfpage hFE Cc (pF) 80 4 60 40 2 20 0 0 0 100 200 300 400 0 2 4 IC (mA) DC current gain as a function of collector current; typical values. 1996 May 09 8 10 VCB (V) IE = ie = 0; f = 1 MHz; Tj = 25 °C. VCE = 7.5 V; tp ≤ 200 µs; δ ≤ 0.02; Tj = 25 °C. Fig.3 6 Fig.4 4 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLT81 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7). MODE OF OPERATION f (MHz) CW, class-B narrow band 900 VCE (V) PL (W) 7.5 1.2 6 1.2 ηC (%) Gp (dB) ≥6 ≥60 typ. 8 typ. 77 typ. 6.5 typ. 77 Note 1. Ts is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation The BLT81 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 9 V; PL = 1.2 W; Ts ≤ 60 °C. MRC088 10 handbook, halfpage Gp (dB) Gp (1) (2) 8 ηC (4) 100 ηC (%) MRC093 2.5 handbook, halfpage PL (W) 80 2.0 (1) (3) 60 6 1.5 (2) 4 40 1.0 2 20 0.5 0 0 0.4 0.8 1.2 1.6 0 2.0 PL (W) 0 0 100 200 Class-B; f = 900 MHz; Ts ≤ 60 °C. Class-B; f = 900 MHz; Ts ≤ 60 °C. (1) VCE = 7.5 V. (2) VCE = 6 V. (1) VCE = 7.5 V. Fig.5 (3) VCE = 7.5 V. (4) VCE = 6 V. Power gain and collector efficiency as functions of load power; typical values. 1996 May 09 Fig.6 5 300 400 500 PIN (mW) (2) VCE = 6 V. Load power as a function of input power; typical values. Philips Semiconductors Product specification UHF power transistor BLT81 Test circuit information handbook, full pagewidth 50 Ω input C1 C2 L1 L2 C3 C4 L4 C6 L5 C5 C7 C8 L6 L8 DUT C10 L10 C11 C14 50 Ω output C13 L7 L9 R1 L3 VCC R2 C9 C12 MEA899 Fig.7 Common emitter test circuit for class-B operation at 900 MHz. 1996 May 09 6 Philips Semiconductors Product specification UHF power transistor BLT81 List of components used in test circuit (see Figs 7 and 8) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C14 multilayer ceramic chip capacitor; note 1 100 pF C2 multilayer ceramic chip capacitor; note 1 3 pF C3, C5, C11, C13 film dielectric trimmer C4 multilayer ceramic chip capacitor; note 1 5.6 pF C6, C7, C10 multilayer ceramic chip capacitor; note 1 5.1 pF C8 multilayer ceramic chip capacitor; note 1 3.6 pF C9 multilayer ceramic chip capacitor; note 1 220 pF C12 multilayer ceramic chip capacitor; 1 nF L1 stripline; note 2 50 Ω length 26.6 mm width 4.85 mm L2 10 turns enamelled 0.6 mm copper wire 250 nH int. dia. 4.5 mm leads 2 × 5 mm L3, L9 grade 3B Ferroxcube wideband HF choke L4 stripline; note 2 50 Ω length 18 mm width 4.85 mm L5 stripline; note 2 75 Ω length 3.5 mm width 2.5 mm L6 stripline; note 2 50 Ω length 10 mm width 4.85 mm L7 4 turns enamelled 0.6 mm copper wire 65 nH int. dia. 4.5 mm leads 2 × 5 mm L8 stripline; note 2 50 Ω length 15 mm width 4.85 mm L10 stripline; note 2 50 Ω length 24.6 mm width 4.85 mm R1, R2 metal film resistor 10 Ω, 0.25 W 1.4 to 5.5 pF CATALOGUE No. 2222 809 09004 4312 020 36640 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄ "; thickness of the copper sheet 35 µm. 16 1996 May 09 7 Philips Semiconductors Product specification UHF power transistor BLT81 140 handbook, full pagewidth strap strap 80 rivets (14x) strap mounting screws (8x) strap VCC L9 L3 C12 C9 R1 C4 C2 C6 L1 C1 C3 R2 L2 L4 C5 L7 L5 L6 C7 C10 L8 C8 L10 C11 C14 C13 MEA898 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads. Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7. 1996 May 09 8 Philips Semiconductors Product specification UHF power transistor BLT81 MRC091 10 Zi (Ω) MRC092 20 ZL (Ω) handbook, halfpage handbook, halfpage 8 RL 16 ri 6 12 4 8 xi 2 XL 4 0 800 840 880 920 0 800 960 1000 f (MHz) 840 880 920 960 1000 f (MHz) Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C. Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C. Fig.9 Fig.10 Load impedance as a function of frequency (series components); typical values. Input impedance as a function of frequency (series components); typical values. MRC089 10 handbook, halfpage Gp (dB) 8 6 handbook, halfpage 4 Zi 2 0 800 840 880 920 ZL MBA451 960 1000 f (MHz) Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C. Fig.11 Power gain as a function of frequency; typical values. 1996 May 09 Fig.12 Definition of transistor impedance. 9 Philips Semiconductors Product specification UHF power transistor BLT81 PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 0.32 0.24 6.7 6.3 3.1 2.9 B 4 A 0.10 0.01 16 o max 16 3.7 3.3 10 o max 2 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.13 SOT223. 1996 May 09 7.3 6.7 o 1 1.80 max 0.2 M A 10 3 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification UHF power transistor BLT81 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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