BLV640 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 200V • Fast Switching RDS(ON) 0.18Ω Ω • Simple Drive Requirements ID 18A Description This advanced low voltage MOSFET is produced using Belling’s proprietary MOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol Parameter Value Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage + 30 V Continuous Drain Current 18 A Continuous Drain Current ( TC=100 oC) 11 A Drain Current (pulsed) (Note 1) 72 A Power Dissipation 125 W Linear Derating Factor 1.0 W/℃ EAS Single Pulsed Avalanche Energy (Note2) 580 mJ IAR Avalanche Current 18 A EAR Repetitive Avalanche Energy 13 mJ ID IDM PD Tj TSDG Operating Junction Temperature Range Storage Temperature Range -55 to +150 o -55 to +150 o C C Thermal Characteristics Symbol Parameter Rth j-c Thermal Resistance, Junction to case Rth j-a Thermal Resistance, Junction to Ambient http://www.belling.com.cn Max. -1Total 6 Pages Max. Value Units 0.5 ℃/ W 62.5 ℃/ W 2008.08.08 BLV640 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 200 - - V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A - - 0.18 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V g fs Forward Transconductance(note3) VDS=15V, ID=11A 6.7 - - S IDSS Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ VDS=200V, VGS=0V - - 1 uA VDS=160V, VGS=0V - - 50 uA IGSS Gate-Source Leakage Current VGS= ± 30V - - ±100 nA Qg Total Gate Charge - 35.7 70 nC Qgs Gate-Source Charge - 6.7 13 nC Qgd Gate-Drain Charge VDD=160V ID=18A VGS=10V Note3 - 17.5 39 nC t (on) Turn-on Delay Time - 40 - ns tr Turn-on Rise Time - 132 - ns t (off) Turn-off Delay Time - 93 - ns tf Turn-off Fall Time - 31 - ns Ciss Input Capacitance - 1312 - pF Coss Output Capacitance - 159 - pF Crss Reverse Transfer Capacitance - 38 - pF Min. Typ. Max. Units VDD=100V ID=18A RG=25Ω Note3 VDS=25V VGS=0V f = 1MHz Source-Drain Diode Characteristics Symbol Parameter Test Conditions IS Continuous Source Diode Forward Current - - 18 A ISM Pulsed Source Diode Forward Current (note1) - - 72 A VSD Forward On Voltage VGS=0V, IS=18A - - 2.0 V trr Reverse Recovery Time VGS=0V, IS=180A - 300 600 ns Qr r Reverse Recovery Charge dIF/dt = 100A/us - 3.4 7.1 uC Note： (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Vdd=50V, L=2.7mH, Ias=18A, Rg=25Ω, staring Tj=25C (3) Pulse width ≤ 300 us; duty cycle ≤ 2% http://www.belling.com.cn -2Total 6 Pages 2008.08.08 BLV640 N-channel Enhancement Mode Power MOSFET Typical Characteristics Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. Transconductance http://www.belling.com.cn Fig 4. On-Resistance vs. Drain Current -3Total 6 Pages 2008.08.08 BLV640 N-channel Enhancement Mode Power MOSFET Typical Characteristics （continued） ） Fig 5. On-Resistance vs. Junction Temperature Fig 6. Body Diode Forward Voltage Fig 7. Gate Charge Characteristics http://www.belling.com.cn Fig 8. Capacitance Characteristics -4Total 6 Pages 2008.08.08 BLV640 N-channel Enhancement Mode Power MOSFET Typical Characteristics （continued） ） Fig 9. Maximum Safe Operating Area Fig 10. Transient Thermal Response Curve http://www.belling.com.cn -5Total 6 Pages 2008.08.08 BLV640 N-channel Enhancement Mode Power MOSFET Test Circuit and Waveform Fig 11. Gate Charge Circuit Fig 12. Gate Charge Waveform Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Unclamped Inductive Switching Test Circuit http://www.belling.com.cn Fig 16. Unclamped Inductive Switching Waveforms -6Total 6 Pages 2008.08.08