SAMWIN SW 50N06 General Description Features zN-Channel MOSFET zBVDSS (Minimum) zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. : 60 V : 0.017ohm : 50 A : 30 nc : 130 W D G TO-252 SW 50N06 S Absolute Maximum Ratings Symbol VDSS ID IDM Parameter Value Units Drain to Source Voltage 60 V Continuous Drain Current (@Tc=25℃) 50 A Continuous Drain Current (@Tc=100℃) 35 A 200 A ±20 V Drain Current Pulsed (Note 1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 480 mJ EAR Repetitive Avalanche Energy (Note 1) 13 mJ Peak Diode Recovery dv/dt (Note 3) 7 V/ns Total Power Dissipation (@Tc=25℃) 130 W Derating Factor above 25℃ 0.9 W/℃ -55 ~ +150 ℃ 300 ℃ dv/dt PD TSTG,TJ TL Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Value Symbol Parameter Units Min Typ Max RθJC Thermal Resistance, Junction-to-Case - - 1.15 ℃/ W RθCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/ W RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/ W 1/6 REV 2.01 07.06.05 SAMWIN Electrical Characteristics SW 50N06 (Tc=25℃ unless otherwise noted) Value Symbol Parameter Test Conditions Units Min Typ Max 60 - - V - 0.07 - V/℃ - - 1 uA Off Characteristics BVDSS Drain- Source Breakdown Voltage VGS=0V,ID=250uA △BVDSS/△ Tj Breakdown Voltage Temperature coefficient ID=250uA,referenced to 25℃ VDS=60V, VGS=0V IDSS IGSS Drain-Source Leakage Current VDS=48V, Tc=125℃ Gate-Source Leakage Current VGS=20V,VDS=0V - - 100 nA Gate-Source Leakage Reverse VGS=-20V, VDS=0V - - -100 nA 2.0 - 4.0 V - 0.0155 0.017 ohm - 900 1220 - 430 550 - 80 100 - 40 60 - 100 200 - 90 180 - 80 160 - 30 40 - 9.6 - - 10 - Min. Typ. Max. - - 50 - - 200 On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA RDS(ON) Static Drain-Source On-state Resistance VGS=10V,ID=25A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz pF Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time VDD=30V,ID=25A RG=50ohm (Note4,5) Fall Time Total Gate Charge Gate-Source Charge VDS=48V,VGS=10V, ID=50A (Note4,5) Gate-Drain Charge (Miller Charge) ns nc Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Integral Reverse p-n Junction Diode in the MOSFET Unit. IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage IS=50A,VGS=0V - - 1.5 V trr Reverse Recovery Time - 54 - ns Qrr Reverse Recovery Charge IS=50A,VGS=0V, dIF/dt=100A/us - 81 - uc ※NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=5.6mH,IAS=50A,VDD=25V,RG=0ohm, Starting TJ=25℃ 3. ISD≤50A,di/dt≤300A/us,VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. REV 2.01 A 2/6 07.06.05 SAMWIN SW 50N06 2 10 ID,Drain Current [A] 10 1 10 2 o 150 C 10 1 o 25 C Note: 1.VDS=50V 0 10 -1 10 0 10 1 10 10 2.250us pulse test. 0 2 3 4 5 6 7 8 9 10 VGS, Gate-Source Voltage [V] Fig 1. On-State Characteristics Fig 2. Transfer Characteristics 150℃ 25℃ Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics (Non-Repetitive) Fig 6. Gate Charge Characteristics REV 2.01 07.06.05