DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 FEATURES PINNING - SOT324B • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS PIN SYMBOL DESCRIPTION 1 c1 collector 1 2 c2 collector 2 3 b1 base 1 4 b2 base 2 5 e common emitters connected to flange • Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band. c1 handbook, halfpage DESCRIPTION 1 2 NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange. b1 e 5 3 b2 4 c2 Top view MAM217 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) d3 (dBc) CW, class-AB 900 24 2 × 80 30 ≥10 ≥45 − 2-tone, class-AB 900 24 2 × 80 30 (PEP) ≥11 ≥35 <−32; typ. −37 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Nov 10 2 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 70 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 5 A IC(AV) average collector current − 5 A Ptot total power dissipation − 97 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C Tmb = 25 °C; note 1 Note 1. Total device; both sections equally loaded. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base Ptot = 97 W; note 1 1.79 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.4 K/W Note 1. Total device; both sections equally loaded. CHARACTERISTICS Values apply to either transistor section; Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. − MAX. − UNIT V(BR)CBO collector-base breakdown voltage IC = 15 mA; IE = 0 V(BR)CEO collector-emitter breakdown voltage IC = 30 mA; IB = 0 30 − − V V(BR)EBO emitter-base breakdown voltage IE = 0.6 mA; IC = 0 3 − − V ICBO collector-base leakage current VCB = 28 V; VBE = 0 − − 1.5 mA hFE DC current gain VCE = 10 V; IC = 1 A 30 Cc collector capacitance VCB = 24 V; IE = ie = 0; f = 1 MHz − 1997 Nov 10 3 70 TYP. − 120 18 − V pF Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter push-pull class-AB test circuit. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) d3 (dBc) CW, class-AB 900 24 2 × 80 30 ≥10 ≥45 − 2-tone, class-AB 900 24 2 × 80 30 (PEP) ≥11 ≥35 <−32; typ. −37 Ruggedness in class-AB operation The BLV897 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the conditions: VCE = 24 V; ICQ = 2 × 80 mA; f = 900 MHz; Th = 25 °C; PL = 30 W. The transistor is also capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases at PL = 30 W (PEP). MBK287 50 MBK286 14 p (dB) 12 handbook, halfpage handbook, G halfpage PL (W) 40 Gp 70 ηC (%) 60 10 50 ηC 30 20 8 40 6 30 4 20 2 10 10 0 0 0 1 2 3 4 5 6 PD (W) 0 10 20 30 PL (W) VCE = 24 V; ICQ = 2 × 80 mA; f = 900 MHz. VCE = 24 V; ICQ = 2 × 80 mA; f = 900 MHz. Fig.2 Fig.3 Load power as a function of drive power; typical values. 1997 Nov 10 0 50 40 4 Power gain and collector efficiency as functions of load power; typical values. Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 handbook, full pagewidth L12 VBB L16 C8 C24 R3 +VCC R6 C6 R1 C12 C10 C14 C16 C20 C22 C18 ,,,, ,,,, ,,,, ,, ,,,, ,, ,,,, ,,,, ,,,, ,,,, ,,,, L14 L20 L8 L6 L1 C4 C3 C25 L9 L21 L11 VBB R2 C9 C11 C13 C27 L25 L7 C5 L28 C29 L5 L15 C28 C26 C2 L3 L26 L29 L2 input 50 Ω L22 L24 DUT L4 C1 ,,,, ,,,, ,,,, ,,,,,, ,,,, ,, ,,,, ,,,, ,,,, L18 L10 L30 L27 L23 L19 C17 C19 R5 C15 C21 +VCC R4 L13 C7 L17 C23 MGM146 Fig.4 Class-AB test circuit at 900 MHz. 1997 Nov 10 5 output 50 Ω Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 List of components COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2 multilayer ceramic chip capacitor; note 1 47 pF; 500 V C3, C27 Tekelec trimmer (type 37271) 0.6 to 4.5 pF C4, C25 multilayer ceramic chip capacitor; note 1 5.6 pF; 500 V C5, C6, C13, C14, multilayer ceramic chip capacitor; C19, C20, C21, C22 note 1 300 pF; 200 V C7, C8, C23, C24 tantalum SMD capacitor 10 µF; 35 V C9, C10 multilayer ceramic chip capacitor 100 nF; 50 V 2222 581 76641 C11, C12 multilayer ceramic chip capacitor 10 nF; 50 V 2222 581 76627 C15, C16, C17, C18 multilayer ceramic chip capacitor; note 1 39 pF; 500 V C26 multilayer ceramic chip capacitor; note 1 2.7 pF; 500 V C28, C29 multilayer ceramic chip capacitor; note 1 27 pF; 500 V L1, L3, L28, L30 stripline; note 2 50 Ω 57.1 × 3 mm L2, L29 semi-rigid cable; note 3 50 Ω ext. conductor length 57.1 mm, ext. dia. 2.2 mm L4, L5 stripline; note 2 18 × 2.6 mm L6, L7 stripline; note 2 2 × 15 mm L8, L9 stripline; note 2 4.8 × 15 mm L10, L11 stripline; note 2 3 × 31.5 mm L12, L13, L16, L17 Ferroxcube chip-bead grade 4S2 L14, L15 microchoke L18, L19 4 turns enamelled 1 mm copper wire int. dia. 6 mm, close wound L20, L21 stripline; note 2 3 × 24 mm L22, L23 stripline; note 2 7.5 × 20 mm L24, L25 stripline; note 2 8.5 × 3 mm L26, L27 stripline; note 2 11 × 3 mm 4330 030 36300 470 nH 4322 057 04771 R1, R2, R5, R6 metal film resistor 5.11 Ω; 0.4 W 2322 151 75118 R3, R4 metal film resistor 4.7 Ω; 0.4 W 2322 151 77508 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board: PTFE microfibre-glass dielectric (εr = 2.2); thickness 1/32 inch; thickness of the copper sheet 2 x 35 µm. 3. Semi-rigid cables L2 and L29 are soldered on the striplines L1 and L30. 1997 Nov 10 6 Philips Semiconductors Preliminary specification UHF push-pull power transistor handbook, full pagewidth BLV897 58 60.5 80 80 C12 C10 C14 C8 C6 +VBB L12 C16 L14 R1 L10 C18 C22 C20 L16 C24 R3 L18 L1 L2 L22 L6 L28 C26 C27 C28 L26 L24 C1 L4 L5 C2 C4 C25 L25 C3 L27 C29 L29 L3 L7 L30 L23 L9 R2 +VBB R6 L20 L8 +VCC L11 L21 L19 R5 R4 C5 L13 C7 L15 C15 C19 C17 L17 +VCC C23 C21 MGM147 C9 C13 C11 Dimensions in mm. The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.5 Printed-circuit board for the 900 MHz class-AB test circuit. 1997 Nov 10 7 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT324B D A F 5 U1 B q c C 1 2 L U2 E A w1 M A B p L 3 4 w2 M C b Q s 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E F L p Q q s U1 U2 w1 w2 mm 4.37 3.55 1.66 1.39 0.13 0.07 8.69 8.07 6.91 6.29 1.66 1.39 5.59 4.57 3.43 3.17 2.32 2.00 14.22 1.66 1.39 19.03 18.77 6.43 6.17 0.51 1.02 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT324B 1997 Nov 10 EUROPEAN PROJECTION ISSUE DATE 97-06-05 8 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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