PHILIPS BLV897

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV897
UHF push-pull power transistor
Preliminary specification
Supersedes data of 1997 Oct 03
1997 Nov 10
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
FEATURES
PINNING - SOT324B
• Internal input matching for an optimum wideband
capability and high gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
PIN
SYMBOL
DESCRIPTION
1
c1
collector 1
2
c2
collector 2
3
b1
base 1
4
b2
base 2
5
e
common emitters connected to
flange
• Common emitter class-AB operation in base stations in
the 800 to 960 MHz frequency band.
c1
handbook, halfpage
DESCRIPTION
1
2
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT324B
4-lead rectangular flange package with a ceramic cap.
The common emitters are connected to the flange.
b1
e
5
3
b2
4
c2
Top view
MAM217
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter push-pull test circuit.
MODE OF
OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
d3
(dBc)
CW, class-AB
900
24
2 × 80
30
≥10
≥45
−
2-tone, class-AB
900
24
2 × 80
30 (PEP)
≥11
≥35
<−32; typ. −37
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Nov 10
2
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
70
V
VCEO
collector-emitter voltage
open base
−
30
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
5
A
IC(AV)
average collector current
−
5
A
Ptot
total power dissipation
−
97
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
Tmb = 25 °C; note 1
Note
1. Total device; both sections equally loaded.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base Ptot = 97 W; note 1
1.79
K/W
Rth mb-h
thermal resistance from mounting base to heatsink note 1
0.4
K/W
Note
1. Total device; both sections equally loaded.
CHARACTERISTICS
Values apply to either transistor section; Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
−
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 15 mA; IE = 0
V(BR)CEO
collector-emitter breakdown voltage
IC = 30 mA; IB = 0
30
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.6 mA; IC = 0
3
−
−
V
ICBO
collector-base leakage current
VCB = 28 V; VBE = 0
−
−
1.5
mA
hFE
DC current gain
VCE = 10 V; IC = 1 A
30
Cc
collector capacitance
VCB = 24 V; IE = ie = 0; f = 1 MHz −
1997 Nov 10
3
70
TYP.
−
120
18
−
V
pF
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter push-pull class-AB test circuit.
MODE OF
OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
d3
(dBc)
CW, class-AB
900
24
2 × 80
30
≥10
≥45
−
2-tone, class-AB
900
24
2 × 80
30 (PEP)
≥11
≥35
<−32; typ. −37
Ruggedness in class-AB operation
The BLV897 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the
conditions: VCE = 24 V; ICQ = 2 × 80 mA; f = 900 MHz; Th = 25 °C; PL = 30 W. The transistor is also capable of
withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases at PL = 30 W (PEP).
MBK287
50
MBK286
14
p
(dB)
12
handbook, halfpage
handbook,
G halfpage
PL
(W)
40
Gp
70
ηC
(%)
60
10
50
ηC
30
20
8
40
6
30
4
20
2
10
10
0
0
0
1
2
3
4
5
6
PD (W)
0
10
20
30
PL (W)
VCE = 24 V; ICQ = 2 × 80 mA; f = 900 MHz.
VCE = 24 V; ICQ = 2 × 80 mA; f = 900 MHz.
Fig.2
Fig.3
Load power as a function of drive power;
typical values.
1997 Nov 10
0
50
40
4
Power gain and collector efficiency as
functions of load power; typical values.
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
handbook, full pagewidth
L12
VBB
L16
C8
C24
R3
+VCC
R6
C6
R1
C12
C10
C14
C16
C20
C22
C18
,,,,
,,,,
,,,,
,, ,,,,
,, ,,,,
,,,,
,,,,
,,,,
,,,,
L14
L20
L8
L6
L1
C4
C3
C25
L9
L21
L11
VBB
R2
C9
C11
C13
C27
L25
L7
C5
L28
C29
L5
L15
C28
C26
C2
L3
L26
L29
L2
input
50 Ω
L22
L24
DUT
L4
C1
,,,,
,,,,
,,,,
,,,,,,
,,,,
,,
,,,,
,,,,
,,,,
L18
L10
L30
L27
L23
L19
C17
C19
R5
C15
C21
+VCC
R4
L13
C7
L17
C23
MGM146
Fig.4 Class-AB test circuit at 900 MHz.
1997 Nov 10
5
output
50 Ω
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
List of components
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE
No.
C1, C2
multilayer ceramic chip capacitor;
note 1
47 pF; 500 V
C3, C27
Tekelec trimmer (type 37271)
0.6 to 4.5 pF
C4, C25
multilayer ceramic chip capacitor;
note 1
5.6 pF; 500 V
C5, C6, C13, C14,
multilayer ceramic chip capacitor;
C19, C20, C21, C22 note 1
300 pF; 200 V
C7, C8, C23, C24
tantalum SMD capacitor
10 µF; 35 V
C9, C10
multilayer ceramic chip capacitor
100 nF; 50 V
2222 581 76641
C11, C12
multilayer ceramic chip capacitor
10 nF; 50 V
2222 581 76627
C15, C16, C17, C18 multilayer ceramic chip capacitor;
note 1
39 pF; 500 V
C26
multilayer ceramic chip capacitor;
note 1
2.7 pF; 500 V
C28, C29
multilayer ceramic chip capacitor;
note 1
27 pF; 500 V
L1, L3, L28, L30
stripline; note 2
50 Ω
57.1 × 3 mm
L2, L29
semi-rigid cable; note 3
50 Ω
ext. conductor
length 57.1 mm,
ext. dia. 2.2 mm
L4, L5
stripline; note 2
18 × 2.6 mm
L6, L7
stripline; note 2
2 × 15 mm
L8, L9
stripline; note 2
4.8 × 15 mm
L10, L11
stripline; note 2
3 × 31.5 mm
L12, L13, L16, L17
Ferroxcube chip-bead grade 4S2
L14, L15
microchoke
L18, L19
4 turns enamelled 1 mm copper
wire
int. dia. 6 mm,
close wound
L20, L21
stripline; note 2
3 × 24 mm
L22, L23
stripline; note 2
7.5 × 20 mm
L24, L25
stripline; note 2
8.5 × 3 mm
L26, L27
stripline; note 2
11 × 3 mm
4330 030 36300
470 nH
4322 057 04771
R1, R2, R5, R6
metal film resistor
5.11 Ω; 0.4 W
2322 151 75118
R3, R4
metal film resistor
4.7 Ω; 0.4 W
2322 151 77508
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board: PTFE microfibre-glass dielectric (εr = 2.2); thickness
1/32 inch; thickness of the copper sheet 2 x 35 µm.
3. Semi-rigid cables L2 and L29 are soldered on the striplines L1 and L30.
1997 Nov 10
6
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
handbook, full pagewidth
BLV897
58
60.5
80
80
C12
C10 C14
C8
C6
+VBB
L12
C16
L14
R1
L10
C18
C22
C20
L16
C24
R3
L18
L1
L2
L22
L6
L28
C26
C27
C28
L26
L24
C1
L4
L5
C2
C4
C25
L25
C3
L27
C29
L29
L3
L7
L30
L23
L9
R2
+VBB
R6
L20
L8
+VCC
L11
L21
L19
R5
R4
C5
L13
C7
L15
C15
C19
C17
L17
+VCC
C23
C21
MGM147
C9 C13
C11
Dimensions in mm.
The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.5 Printed-circuit board for the 900 MHz class-AB test circuit.
1997 Nov 10
7
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT324B
D
A
F
5
U1
B
q
c
C
1
2
L
U2
E
A
w1 M A B
p
L
3
4
w2 M C
b
Q
s
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
E
F
L
p
Q
q
s
U1
U2
w1
w2
mm
4.37
3.55
1.66
1.39
0.13
0.07
8.69
8.07
6.91
6.29
1.66
1.39
5.59
4.57
3.43
3.17
2.32
2.00
14.22
1.66
1.39
19.03
18.77
6.43
6.17
0.51
1.02
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT324B
1997 Nov 10
EUROPEAN
PROJECTION
ISSUE DATE
97-06-05
8
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Nov 10
9
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
NOTES
1997 Nov 10
10
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
NOTES
1997 Nov 10
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
127067/00/02/pp12
Date of release: 1997 Nov 10
Document order number:
9397 750 02952