High Reliability Serial EEPROMs High Reliability Series EEPROMs Microwire BUS BR93L□□-W Series, BR93A□□-WM Series, BR93H□□-WC Series No.11001EFT03 ROHM's series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing the boundaries of reliability to the limit. BR93L□□-W Series are assort 1Kbit～16Kbit. BR93A□□-WM Series are possible to operate at 105℃ and are assorted with 1K～16Kbit. BR93H□□-WC Series are possible to operate at 125℃, are assorted with 2K～16Kbit. Contents BR93L□□-W Series BR93L46-W, BR93L56-W, BR93L66-W, BR93L76-W, BR93L86-W BR93A□□-WM Series BR93A46-WM, BR93A56-WM, BR93A66-WM, BR93A76-WM, BR93A86-WM ・・・・P2 BR93H□□-WC Series BR93H56-WC, BR93H66-WC, BR93H76-WC, BR93H86-WC ・・・P22 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Serial EEPROM Series High Reliability Series EEPROMs Microwire BUS BR93L□□-W Series, 93A□□-WM Series ●Description BR93L□□-W Series, BR93A□□-WM Series are serial EEPROM of serial 3-line interface method ●Features 1) 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) 2) Actions available at high speed 2MHz clock(2.5~5.5V) 3) Speed write available (write time 5ms max.） 4) Same package and pin layout from 1Kbit to 16Kbit 5) 1.8~5.5V (BR93L□□-W Series), 2.5～5.5V(BR93A□□-WM Series) single power source action 6) Highly reliable connection by Au pad and Au wire 7) Address auto increment function at read action 8) Write mistake prevention function Write prohibition at power on Write prohibition by command code Write mistake prevention function at low voltage 9) Program cycle auto delete and auto end function 10) Program condition display by READY / BUSY 11) Low current consumption At write action (at 5V) : 1.2mA (Typ.) At read action (at 5V) : 0.3mA (Typ.) At standby action (at 5V) : 0.1μA (Typ.)(CMOS input) 12) TTL compatible( input / output s) *1 13) Compact package SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/TSSOP-B8J 14) Data retention for 40 years 15) Data rewrite up to 1,000,000 times 16) Data at shipment all addresses FFFFh *1 Only SOP8, SOP-J8, MSOP8 for BR93A□□-WM ●BR93L, BR93A Series Type Power source voltage Capacity Bit format F RF FJ 1Kbit 64×16 BR93L46-W 1.8～5.5V ● ● ● 2Kbit 128×16 BR93L56-W 1.8～5.5V ● ● 4Kbit 256×16 BR93L66-W 1.8～5.5V ● 8Kbit 512×16 BR93L76-W 1.8～5.5V ● 16Kbit 1K×16 BR93L86-W 1.8～5.5V Package type SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J RFJ FV RFV FVT RFVT RFVM RFVJ ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 1Kbit 64×16 BR93A46-WM 2.5～5.5V ● ● ● ● 2Kbit 128×16 BR93A56-WM 2.5～5.5V ● ● ● ● ● 4Kbit 256×16 BR93A66-WM 2.5～5.5V ● ● ● ● ● 8Kbit 512×16 BR93A76-WM 2.5～5.5V ● ● ● ● 16Kbit 1K×16 BR93A86-WM 2.5～5.5V ● ● ● ● www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/40 ● 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●Absolute Maximum Ratings(Ta=25℃,BR93L□□-W) Parameter Symbol Impressed voltage VCC Limits Unit -0.3～+6.5 V 450 (SOP8) *1 450 (SOP-J8) *2 Permissible dissipation 300 (SSOP-B8) *3 Pd mW 330 (TSSOP-B8) *4 310 (MSOP8) *5 310 (TSSOP-B8J) *6 Storage temperature range Tstg -65～+125 ℃ Action temperature range Topr -40～+85 ℃ ‐ -0.3～VCC+0.3 V Limits Unit Terminal voltage * When using at Ta=25℃ or higher, 4.5mW(*1,*2), 3.0mW(*3) 3.3mW(*4), 3.1mW(*5, 6), to be reduced per 1℃. ●Absolute Maximum Ratings (Ta=25℃,BR93A□□-WM) Parameter Symbol Impressed voltage VCC -0.3～+6.5 450 (SOP8) Permissible dissipation V *1 450 (SOP-J8) *2 Pd mW 310 (MSOP8) *3 Storage temperature range Tstg -65～+125 ℃ Action temperature range Topr -40～+105 ℃ ‐ -0.3～VCC+0.3 V Terminal voltage * When using at Ta=25℃ or higher, 4.5mW(*1,*2), 3.1 mW(*3) to be reduced per 1℃. ●Memory cell characteristics (VCC=1.8～5.5V,BR93L□□-W) Limit Parameter Number of data rewrite times *1 Min. Typ. Max. Unit Condition 1,000,000 - - Times Ta=25℃ 40 - - Years Ta=25℃ Unit Condition Data hold years *1 ○Shipment data all address FFFFh *1 Not 100% TESTED ●Memory cell characteristics (VCC=2.5～5.5V,BR93A□□-WM) Limit Parameter Number of data rewrite times *1 Data hold years *1 Min. Typ. Max. 1,000,000 Times 100,000 40 - - 10 - - Ta≦25℃ Ta≦105℃ Ta≦25℃ Years Ta≦50℃ ○Shipment data all address FFFFh *1 Not 100% TESTED ●Recommended action conditions (BR93L□□-W) Parameter Power source voltage Input voltage ●Recommended action conditions (BR93A□□-WM) Parameter Power source voltage Input voltage www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol Limits VCC 1.8～5.5 VIN 0～VCC Symbol Limits VCC 2.5～5.5 VIN 0～VCC 3/40 Unit V Unit V 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●Electrical characteristics (Unless otherwise specified, VCC=2.5～5.5V, Ta=-40～+85℃, BR93L□□-W, Ta=-40～+105℃, BR93A□□-WM) Limits Parameter Symbol Unit Condition Min. Typ. Max. “L” input voltage 1 VIL1 -0.3 - +0.8 V 4.0V≦VCC≦5.5V “L” input voltage 2 VIL2 “H” input voltage 1 VIH1 -0.3 - 0.2 x VCC V VCC≦4.0V 2.0 - VCC+0.3 V 4.0V≦VCC≦5.5V “H” input voltage 2 “L” output voltage 1 VIH2 0.7 x VCC - VCC+0.3 V VCC≦4.0V VOL1 0 - 0.4 V IOL=2.1mA, 4.0V≦VCC≦5.5V “L” output voltage 2 VOL2 0 - 0.2 V IOL=100μA “H” output voltage 1 “H” output voltage 2 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0V≦VCC≦5.5V VOH2 VCC-0.2 - VCC V IOH=-100μA Input leak current ILI -1 - +1 µA VIN=0V～VCC Output leak current ILO -1 - +1 µA VOUT=0V～VCC, CS=0V ICC1 - - 3.0 mA fSK=2MHz, tE/W=5ms (WRITE) ICC2 - - 1.5 mA fSK=2MHz (READ) ICC3 - - 4.5 mA fSK=2MHz, tE/W=5ms (WRAL, ERAL) ISB - - 2 µA CS=0V, DO=OPEN Current consumption at action Standby current ◎Radiation resistance design is not made. (Unless otherwise specified, VCC=1.8～2.5V, Ta=-40～+85℃, BR93L□□-W) Limits Parameter Symbol Unit Min. Typ. Max. “L” input voltage VIL -0.3 - 0.2 x VCC V “H” input voltage VIH 0.7 x VCC - VCC+0.3 V Condition “L” output voltage VOL 0 - 0.2 V IOL=100μA “H” output voltage VOH VCC-0.2 - VCC V IOH=-100μA Input leak current ILI -1 - +1 μA VIN=0V～VCC Output leak current ILO -1 - +1 μA VOUT=0V～VCC, CS=0V - 1.5 mA fSK=500kHz, tE/W=5ms (WRITE) Current consumption at action ICC1 - ICC2 - - 0.5 mA fSK=500kHz (READ) ICC3 - - 2 mA fSK=500kHz, tE/W=5ms (WRAL, ERAL) Standby current ISB - - 2 μA CS=0V, DO=OPEN ◎Radiation resistance design is not made. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note ●Action timing characteristics (BR93L□□-W, Ta=-40～+85℃, VCC=2.5～5.5V, BR93A□□-WM, Ta=-40～+105℃, VCC=2.5～5.5V) 2.5V≦VCC≦5.5V Parameter Symbol Unit Min. Typ. Max. SK frequency fSK 2 MHz SK “H” time tSKH 230 ns SK “L” time tSKL 230 ns CS “L” time tCS 200 ns CS setup time tCSS 50 ns DI setup time tDIS 100 ns CS hold time tCSH 0 ns DI hold time tDIH 100 ns Data “1” output delay time tPD1 200 ns Data “0” output delay time tPD0 200 ns Time from CS to output establishment tSV 150 ns Time from CS to High-Z tDF 150 ns Write cycle time tE/W 5 ms (BR93L□□-W, Ta=-40～+85℃, VCC=1.8～2.5V) Parameter Symbol SK frequency SK “H” time SK “L” time CS “L” time CS setup time DI setup time CS hold time DI hold time Data “1” output delay time Data “0” output delay time Time from CS to output establishment Time from CS to High-Z Write cycle time Min. 0.8 0.8 1 200 100 0 100 - fSK tSKH tSKL tCS tCSS tDIS tCSH tDIH tPD1 tPD0 tSV tDF tE/W 1.8V≦VCC≦2.5V Typ. Max. 500 0.7 0.7 0.7 200 5 Unit kHz us us us ns ns ns ns us us us ns ms ●Sync data input / output timing CS tCSS tSKH tSKL tCSH SK tDIS tDI H DI tPD1 t PD0 DO(READ) tDF DO(WRITE) STATUS VALID Fig.1 Sync data input / output timing ○Data is taken by DI sync with the rise of SK. ○At read action, data is output from DO in sync with the rise of SK. ○The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area DO where CS is “H”, and valid until the next command start bit is input. And, while CS is “L”, DO becomes High-Z. ○After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following action mode. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●BR93L□□-W Characteristic data (The following characteristic data are Typ. values.) Fig.2 H output voltage VIH(CS,SK,DI) Fig.3 H input voltage VIL(CS,SK,DI) Fig.4 L output voltage VOL-IOL(Vcc=1.8V) Fig.5 L output voltage VOL-IOL(Vcc=2.5V) Fig.6 L output voltage VOL-IOL(Vcc=4.0V) Fig.7 H output voltage VOH-IOH(Vcc=1.8V) Fig.8 H output voltage VOH-IOH(Vcc=2.5V) Fig.9 H output voltage VOH-IOH(Vcc=4.0V) Fig.10 Fig.11 Output leak current ILO (DO) Fig.14 Consumption current at WRAL action ICC3 (WRAL, fSK=2MHz) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.12 Input leak current ILI(CS,SK,DI) Current consumption at WRITE action ICC1 (WRITE, fSK=2MHz) Fig.13 Consumption current at READ action Fig.15 Current consumption at WRITE action Fig.16 Consumption current at READ action ICC1 (WRITE, fSK=500kHz) ICC2 (READ, fSK=500kHz) 6/40 ICC2 (READ, fSK=2MHz) 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●BR93L□□-W Fig.17 Characteristic data (The following characteristic data are Typ. values.) Consumption current at WRAL action ICC3 (WRAL, fSK=500kHz) Fig.20 SK high time tSKH Fig.23 CS hold time tCSH Fig.26 DI setup time tDIS Fig.29 Time from CS to output establishment tSV www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.18 Consumption current at standby action ISB Fig.21 Fig.24 Fig.27 Fig.19 SK frequency fSK SK low time tSKL Fig.22 CS low time tCS CS setup time tCSS Fig.25 DI hold time tDIH Data “0” output delay time tPD0 Fig.30 Time from CS to High-Z tDF 7/40 Fig.28 Output data “1” delay time tPD1 Fig.31 Write cycle time tE/W 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●BR93A□□-WM Characteristic data (The following characteristic data are Typ. values.) Fig.32 H output voltage VIH(CS,SK,DI) Fig.35 L output voltage VOL-IOL(Vcc=4.0V) Fig.38 Input leak current ILI(CS,SK,DI) Fig.33 H input voltage VIL(CS,SK,DI) Fig.36 H output voltage VOH-IOH(Vcc=2.5V) Fig.39 Output leak current ILO(DO) Fig.34 L output voltage VOL-IOL(Vcc=2.5V) Fig.37 H output voltage VOH-IOH(Vcc=4.0V) Fig.40 Current consumption at WRITE action Icc1(WRITE, fSK=2MHz) Fig.41 Consumption current at READ action Icc2(READ, fSK=2MHz) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.42 Consumption current at WRAL action Fig.43 Consumption current at standby action ISB Icc3(WRAL, fSK=2MHz) 8/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●BR93A□□-WM Characteristic data (The following characteristic data are Typ. values.) Fig.44 SK frequency fSK Fig.45 Fig.47 Fig.48 CS hold time tCSH CS low time tCS Fig.50 DI hold time tDIH Fig.53 Technical Note Output data “1” delay time tPD1 SK high time tSKH Fig.51 DI setup time tDIS Fig.54 Time from CS to output establishment tSV Fig.46 SK low time tSKL Fig.49 CS setup time tCSS Fig.52 Data “0” output delay time tPD0 Fig.55 Time from CS to High-Z tDF Fig.56 Write cycle time tE/W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●Block diagram CS Power source voltage detection Command decode Control SK Clock generation 6bit 7bit 8bit 9bit 10bit Address buffer Command register DI High voltage occurrence Write prohibition Data register Address decoder 16bit 6bit 7bit 8bit 9bit 10bit R/W amplifier 16bit 1,024 bit 2,048 bit 4,096 bit 8,192 bit 16,384 bit EEPROM Dummy bit DO Fig.57 Block diagram ●Pin assignment and function NC GND DO DI Vcc NC NC GND BR93LXXRF-W/AXXRF-WM:SOP8 BR93LXXF-W/AXXF-WM:SOP8 BR93LXXRFJ-W/AXXRFJ-WM:SOP-J8 BR93LXXFJ-W/AXXFJ-WM:SOP-J8 BR93LXXRFV-W:SSOP-B8 BR93LXXFV-W:SSOP-B8* BR93LXXRFVT-W:TSSOP-B8 BR93LXXFVT-W:TSSOP-B8* BR93LXXRFVM-W/AXXRFVM-WM:MSOP8 BR93LXXRFVJ-W:TSSOP-B8J NC Vcc CS SK CS SK DI DO *BR93L46/56/66-W Fig.58 Pin assignment diagram Pin name VCC GND CS SK DI DO NC I/O Input Input Input Output - www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Function Power source All input / output reference voltage, 0V Chip select input Serial clock input Start bit, ope code, address, and serial data input Serial data output, READY / BUSY internal condition display output Non connected terminal, Vcc, GND or OPEN 10/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●Description of operations Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input),DO (serial data output) ,and CS (chip select) for device selection. When to connect one EEPROM to a microcontroller, connect it as shown in Fig.59(a) or Fig.59(b). When to use the input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Fig.59(b) (Refer to pages 17/35.), and connection by 3 lines is available. In the case of plural connections, refer to Fig. 59 (c). Microcontroller BR93LXX /AXX CS SK SK SK SK DO DI DO DI DI DO CS3 CS1 CS0 SK DO DI DO Fig.59-(a) Connection by 4 lines Fig.59-(b) Connection by 3 lines CS SK DI DO Microcontroller CS CS SK DI DO BR93LXX /AXX CS CS SK DI DO Microcontroller CS Device 1 Device 2 Device 3 Fig.59-(c) Connection example of plural devices Fig.59 Connection method with microcontroller Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called a start bit. After input of the start bit, input ope code, address and data. Address and data are input all in MSB first manners. “0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO of the microcontroller, input “0” before the start bit input, to control the bit width. ●Command mode code BR93L46-W BR93A46-WM Address BR93L56/66-W BR93A56/66-WM BR93L76/86-W BR93A76/86-WM 1 10 A5,A4,A3,A2,A1,A0 A7,A6,A5,A4,A3,A2,A1,A0 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 1 00 1 01 1 00 0 1 **** 0 1 ****** 0 1 ******** Write disable (WDS) 1 00 0 0 **** 0 0 ****** 0 0 ******** Erase (ERASE) 1 11 Command Read (READ) *1 Write enable (WEN) Write (WRITE) Write all (WRAL) *2 *2 Start Ope bit 1 1 **** A5,A4,A3,A2,A1,A0 A5,A4,A3,A2,A1,A0 1 1 ****** A7,A6,A5,A4,A3,A2,A1,A0 A7,A6,A5,A4,A3,A2,A1,A0 1 1 Data D15~D0(READ DATA) ******** A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(WRITE DATA) D15~D0(WRITE DATA) A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 Chip erase (ERAL) 1 00 1 0 **** 1 0 ****** 1 0 ******** ・ Input the address and the data in MSB first manners. A7 of BR93L56-W/A56-WM becomes Don't Care. ・ As for *, input either VIH or VIL. A9 of BR93L76-W/A76-WM becomes Don't Care. *Start bit Acceptance of all the commands of this IC starts at recognition of the start bit. The start bit means the first “1” input after the rise of CS. *1 As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and address data in significant order are sequentially output continuously. (Auto increment function) *2 When the read and the write all commands are executed, data written in the selected memory cell is automatically deleted, and input data is written. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 11/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note ●Timing chart 1) Read cycle (READ) ～ ～ ～ ～ ～ ～ CS ～ ～ *1 1 4 n n+1 ～ ～ DI 2 ～ ～ 1 ～ ～ SK Am 0 A1 ～ ～ 1 A0 *2 D1 D0 D15 D14 ～ ～ D14 ～ ～ D15 ～ ～ ～ ～ ～ ～ 0 DO BR93L46-W/A46-WM : n=25, m=5 BR93L56-W/A56-WM : n=27, m=7 BR93L66-W/A66-WM BR93L76-W/A76-WM : n=29, m=9 BR93L86-W/A86-WM High-Z *1 Start bit When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as a start bit, and the following operation is started. This is common to all the commands to described hereafter. Fig. 60 Read cycle ○When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK. This IC has an address auto increment function valid only at read command. This is the function where after the above read execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto increment, keep CS at “H”. 2) Write cycle (WRITE) ～ ～ ～ ～ ～ ～ tCS CS ～ ～ A1 A0 D15 D14 D1 D0 ～ ～ Am ～ ～ 1 ～ ～ 0 ～ ～ 1 n 4 ～ ～ DI 2 ～ ～ 1 ～ ～ ～ ～ SK STATUS tSV BR93L46-W/A46-WM : n=25, m=5 BR93L56-W/A56-WM : n=27, m=7 BR93L66-W/A66-WM BR93L76-W/A76-WM : n=29, m=9 BR93L86-W/A86-WM BUSY READY ～ ～ DO High-Z tE/W Fig.61 Write cycle ○In this command, input 16bit data (D15~D0) are written to designated addresses (Am~A0). The actual write starts by the fall of CS of D0 taken SK clock. When STATUS is not detected, (CS=”L” fixed) Max. 5ms in conformity with tE/W, and when STATUS is detected (CS=”H”), all commands are not accepted for areas where “L” (BUSY) is output from D0, therefore, do not input any command. 3) Write all cycyle (WRAL) ～ ～ ～ ～ ～ ～ tCS CS 1 D15 D14 D1 D0 ～ ～ 0 ～ ～ 0 ～ ～ 0 ～ ～ 1 ～ ～ DI n 5 ～ ～ 2 ～ ～ 1 ～ ～ ～ ～ SK STATUS ～ ～ ～ ～ tSV BR93L46-W/A46-WM : n=25 BR93L56-W/A56-WM : n=27 BR93L66-W/A66-WM BR93L76-W/A76-WM : n=29 BR93L86-W/A86-WM BUSY READY ～ ～ DO High-Z Fig.62 Write all cycle tE/W ○In this command, input 16bit data is written simultaneously to all adresses. Data is not written continuously per one word but is written in bulk, the write time is only Max. 5ms in conformity with tE/W. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 12/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series 4) Write enable (WEN) / disable (WDS) cycle ～ ～ CS 2 1 3 4 5 6 7 8 ～ ～ SK 1 0 BR93L46-Ｗ/A46-WM : n=9 BR93L56-W/A56-WM : n=11 BR93L66-W/A66-WM BR93L76-W/A76-WM : n=13 BR93L86-W/A86-WM 0 ～ ～ DI n ～ ～ ENABLE=1 1 DISABLE=0 0 DO High-Z Fig.63 Write enable (WEN) / disable (WDS) cycle ○ At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it is necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write disable command is executed or the power is turned off. However, the read command is valid irrespective of write enable / diable command. Input to SK after 6 clocks of this command is available by either “H” or “L”, but be sure to input it. ○ When the write enable command is executed after power on, write enable status gets in. When the write disable command is executed then, the IC gets in write disable status as same as at power on, and then the write command is canceled thereafter in software manner. However, the read command is executable. In write enable status, even when the write command is input by mistake, write is started. To prevent such a mistake, it is recommended to execute the write disable command after completion of write. 5) Erase cycle timing (ERASE) ～ ～ ～ ～ STATUS ～ ～ ～ ～ 1 ～ ～ DI n 4 2 ～ ～ 1 ～ ～ SK A3 A2 A1 A0 BR93L46-W/A46-WM : n=9, m=5 BR93L56-W/A56-WM : n=11, m=7 BR93L66-W/A66-WM BR93L76-W/A76-WM : n=13, m=9 BR93L86-W/A86-WM ～ ～ tSV ～ ～ BUSY READY ～ ～ DO ～ ～ Am ～ ～ 1 ～ ～ 1 ～ ～ ～ ～ tCS CS High-Z tE/W Fig.64 Erase cycle timing ○In this command, data of the designated address is made into “1”. The data of the designated address becomes “FFFFh”. Actual ERASE starts at the fall of CS after the fall of A0 taken SK clock. In ERASE, status can be detected in the same manner as in WRITE command. 6) Chip erase cycle timing (ERAL) ～ ～ ～ ～ STATUS 0 tSV ～ ～ 1 BR93L46-W/A46-WM : n=9 BR93L56-W/A56-WM : n=11 BR93L66-W/A66-WM BR93L76-W/A76-WM : n=13 BR93L86-W/A86-WM BUSY READY ～ ～ DO 0 ～ ～ 0 ～ ～ 1 n ～ ～ DI 4 ～ ～ 2 ～ ～ ～ ～ 1 ～ ～ SK ～ ～ tCS CS High-Z tE/W Fig.65 Chip erase cycle timing ○In this command, data of all addresses is erased. Data of all addresses becomes ”FFFFh”. Actual ERASE starts at the fall of CS after the falll of the n-th clock from the start bit input. In ERAL, status can be detected in the same manner as in WRITE command. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 13/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note ●Application 1) Method to cancel each command ○READ Start bit 1bit Ope code Address 2bit 6bit *1 (In the case of BR93L46-W/A46-WM) Data 16bit Cancel is available in all areas in read mode. ＊1 Address is 8 bits in BR93L56-W/A56-WM, BR93L-66W/A66-WM Address is 10 bits in BR93L76-W/A76-WM, BR93L86-W/A86-WM ・Method to cancel：cancel by CS=“L” Fig.66 READ cancel available timing ○WRITE, WRAL ・25 Rise of clock SK DI 24 D1 *2 25 D0 Enlarged figure Start bit 1bit Ope code Address 2bit *1 Data 6bit tE/W (In the case of BR93L46-W/A46-WM) 16bit a b a：From start bit to 25 clock rise＊2 Cancel by CS=“L” *1 Address is 8 bits in BR93L56-W/A56-WM, BR93L66-W/A66-WM Address is 10 bits in BR93L76-W/A76-WM BR93L86-W/A86-WM *2 27 clocks in BR93L56-W/A56-WM, BR93L66-W/A66-WM 29 clocks in BR93L76-W/A76-WM BR93L86-W/A86-WM b：25 clock rise and after＊2 Cancellation is not available by any means. If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. And when SK clock is input continuously, cancellation is not available. 29 Rise of clock *2 SK 30 DI 28 D1 29 31 D0 b c a Enlarged figure Start bit 1bit Address *1 Ope code 2bit a 10bit Data tE/W 16bit b (In the case of BR93L86-W/A86-WM) c a：From start bit to 29 clock rise Cancel by CS=“L” b：29 clock rise and after Cancellation is not available by any means. If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. c：30 clock rise and after Cancel by CS=“L” However, when write is started in b area (CS is ended), cancellation is not available by any means. And when SK clock is output continuously is not available. Note 1) If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. Note 2) If CS is started at the same timing as that of the SK rise, write execution/cancel becomes unstable, therefore, it is recommended to fail in SK=”L” area. As for SK rise, recommend timing of tCSS/tCSH or higher. Fig.67 WRITE, WRAL cancel available timing www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 14/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note 9 Rise of clock＊2 ○ERASE, ERAL SK 8 9 A1 DI A0 Enlarged figure Start bit 1bit Ope code Address 2bit 6bit *1 1/2 tE/W (In the case of BR93L46-W/A46-WM) b a ＊1 Address is 8 bits in BR93L56-W/A56-WM, BR93L66-W/A66-WM Address is 10 bits in BR93L76-W/A76-WM a：From start bit to 9 clock rise＊2 Cancel by CS=“L” b：9 clock rise and after＊2 Cancellation is not available by any means. If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. And when SK clock is input continuously, cancellation is not available. ＊2 11 clocks in BR93L56-W/A56-WM, BR93L66-W/A66-WM 13 clocks in BR93L76-W/A76-WM 13 Rise of clock SK 12 DI 1bit Ope code 2bit Address *1 15 b c Enlarged figure tE/W (In the case of BR93L86-W/A86-WM) 10bit b a 14 D1 a Start bit 13 *2 c a：From start bit to 13 clock rise Cancel by CS=“L” b：13 clock rise and after Cancellation is not available by any means. If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. c：14 clock rise and after Cancel by CS=“L” However, when write is started in b area (CS is ended), cancellation is not available by any means. And when SK clock is output continuously is not available. Note 1) If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. Note 2) If CS is started at the same timing as that of the SK rise, write execution/cancel becomes unstable, therefore, it is recommended to fail in SK=”L” area. As for SK rise, recommend timing of tCSS/tCSH or higher. Fig.68 ERASE, ERAL cancel available timing 2) At standby ○Standby current When CS is “L”, SK input is “L”, DI input is “H”, and even with middle electric potential, current does not increase. ○Timing As shown in Fig.69, when SK at standby is “H”, if CS is started, DI status may be read at the rise edge. At standby and at power ON/OFF, when to start CS, set SK input or DI input to “L” status. (Refer to Fig.70) If CS is started when SK=”L” or DI=”L”, a start bit is recognized correctly. CS=SK=DI=”H” Wrong recognition as a start bit CS CS Start bit input SK SK DI DI Fig.70 Normal action timing Fig.69 Wrong action timing www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Start bit input 15/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series 3) Equivalent circuit Output circuit Input citcuit RESET int. CSint. CS DO OEint. Fig.72 Input circuit (CS) Fig.71 Output circuit (DO) Input circuit Input circuit CS int. CS int. DI SK Fig.73 Input circuit (DI) Fig.74 Input circuit (SK) 4) I/O peripheral circuit 4-1) Pull down CS. By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented. ○Pull down resistance Rpd of CS pin To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC. Rpd ≧ Microcontroller VOHM “H” output VOHM ≧ EEPROM Rpd IOHM VIHE ・・・① ・・・② Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA, from the equation ①, VIHE IOHM VOHM Rpd ≧ “L” input ∴ Rpd ≧ 2.4 -3 2×10 1.2 [kΩ] With the value of Rpd to satisfy the above equation, VOHM becomes 2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied. Fig.75 CS pull down resistance ・VIHE : EEPROM VIH specifications ・VOHM : Microcontroller VOH specifications ・IOHM : Microcontroller IOH specifications 4-2) DO is available in both pull up and pull down. Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to pull down and pull up DO. When there is no influence upon the microcontroller actions, DO may be OPEN. If DO is OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes this as a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such output, pull up DO pin for improvement. CS “H” CS SK SK Enlarged DI D0 DI High-Z READY DO DO BUSY BUSY High-Z CS=SK=DI=”H” When DO=OPEN Improvement by DO pull up DO BUSY READY CS=SK=DI=”H” When DO=pull up Fig.76 READY output timing at DO=OPEN www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 16/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ○Pull up resistance Rpu and pull down resistance Rpd of DO pin As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC. Microcontroller VILM Rpu ≧ EEPROM Rpu VOLE ≦ IOLE VOLE Rpu ≧ “L” output Rpu ≧ ∴ “H” input ・VOLE ・IOLE ・VILM VOHE ≧ 5－0.4 -3 2.1×10 2.2 [kΩ] VOHE ・・・⑤ IOHE VIHM ・・・⑥ Example) When VCC =5V, VOHE=Vcc－0.2V, IOHE=0.1mA, VIHM=Vcc×0.7V from the equation ⑤, VOHE IOHE ・・・④ : EEPROM VOL specifications : EEPROM IOL specifications : Microcontroller VIL specifications Rpd ≧ EEPROM Rpd VILM ・・・③ With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied. Fig.77 DO pull up resistance VIHM IOLE Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V, from the equation ③, “L” input Microcontroller Vcc－VOLE “H” output Rpd ≧ Rpd ≧ ∴ 5－0.2 -3 0.1×10 48 [kΩ] With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied. Fig.78 DO pull down resistance ・VOHE ・IOHE ・VIHM : EEPROM VOH specifications : EEPROM IOH specifications : Microcontroller VIH specifications 5) READY / BUSY status display (DO terminal) (common to BR93L46-W/A46-WM,BR93L56-W/A56-WM, BR93L66-W/A66-WM, BR93L76-W/A76-WM, BR93L86-W/A86-WM) This display outputs the internal status signal. When CS is started after tCS (Min.200ns) from CS fall after write command input, “H” or “L” is output. R/B display＝“L” (BUSY) = write under execution After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically. And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted. （DO status） R/B display = “H” (READY) = command wait status （DO status） Even after tE/W (max.5ms) from write of the memory cell, the following command is accepted. Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore, DI=“L” in the area CS=“H”. (Especially, in the case of shared input port, attention is required.) *Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted. Therefore, status READY output is cancelled, and malfunction and mistake write may be made. STATUS CS SK CLOCK DI WRITE INSTRUCTION DO tSV High-Z READY BUSY Fig.79 R/B status output timing chart www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 17/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series 6) When to directly connect DI and DO This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart, meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control line. Microcontroller EEPROM DI/O PORT DI R DO Fig.80 DI, DO control line common connection ○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input. Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the same time in the following points. (1) 1 clock cycle to take in A0 address data at read command Dummy bit “0” is output to DO terminal. →When address data A0 = “1” input, through current route occurs. EEPROM CS input “H” EEPROM SK input A1 EEPROM DI input A0 Collision of DI input and DO output EEPROM DO output 0 High-Z Microcontroller DI/O port A1 D15 D14 D13 A0 Microcontroller output High-Z Microcontroller input Fig.81 Collision timing at read data output at DI, DO direct connection (2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output. When the next start bit input is recognized, “HIGH-Z” gets in. →Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”, READY output “H” is output from DO terminal, and through current route occurs. Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted. ～ ～ EEPROM SK input Write command EEPROM DI input Write command EEPROM DO output Write command ～ ～ Write command ～ ～ EEPROM CS input ～ ～ ～ ～ ～ ～ READY ～ ～ ～ ～ BUSY READY High-Z Collision of DI input and DO output BUSY Microcontroller output Microcontroller input ～ ～ READY Write command ～ ～ Microcontroller DI/O port Microcontroller output Fig.82 Collision timing at DI, DO direct connection Note) As for the case (2), attention must be paid to the following. When status READY is output, DO and DI are shared, DI=”H” and the microcontroller DI/O=”High-Z” or the microcontroller DI/O=”H”,if SK clock is input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at status READY output, set SK=“L”, or start CS within 4 clocks after “H” of READY signal is output. Start bit CS Because DI=”H”, set SK=”L” at CS rise. SK DI READY DO High-Z Fig.83 Start bit input timing at DI, DO direct connection www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 18/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ○Selection of resistance value R The resistance R becomes through current limit resistance at data collision. When through current flows, noises of power source line and instantaneous stop of power source may occur. When allowable through current is defined as I, the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence upon basic operations. (1) Address data A0 = “1” input, dummy bit “0” output timing (When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI) ・Make the through current to EEPROM 10mA or below. ・See to it that the level VIH of EEPROM should satisfy the following. Conditions Microcontroller VOHM ≦ VIHE EEPROM VOHM ≦ IOHM×R + VOLE DI/O PORT At this moment, if VOLE=0V, DI VOHM ≦ IOHM×R VOHM “H” output R IOHM R ≧ ∴ DO VOHM IOHM ・・・⑦ VOLE Fig.84 : EEPROM VIH specifications : EEPROM VOL specifications : Microcontroller VOH specifications : Microcontroller IOH specifications ・VIHE ・VOLE ・VOHM ・IOHM “L” output Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output) (2) DO status READY output timing (When the microcontroller DI/O is “L”, EEPROM DO output “H”, and “L” is input to DI) ・Set the EEPROM input level VIL so as to satisfy the following. Conditions Microcontroller “L” output VOLM ≧ VILE EEPROM DI/O PORT DI VOLM ≧ VOHE – IOLM×R VOLM As this moment, VOHE=Vcc VOLM ≧ Vcc – IOLM×R R IOHM DO VOHE Vcc – VOLM ∴ IOLM “H” output ・・・⑧ : EEPROM VIL specifications : EEPROM VOH specifications : Microcontroller VOL specifications : Microcontroller IOL specifications ・VILE ・VOHE ・VOLM ・IOLM Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA, From the equation ⑦, R ≧ R ≧ ∴ R ≧ From the equation⑧, VOHM R ≧ IOHM 5 R ≧ -3 0.4×10 12.5 [kΩ] ・・・⑨ ∴ R ≧ Vcc – VOLM IOLM 5 – 0.4 -3 2.1×10 2.2 [kΩ] ・・・⑩ Therefore, from the equations ⑨ and ⑩, ∴ R ≧ 12.5 [kΩ] Fig.85 Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 19/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series 7) Notes on power ON/OFF ・At power ON/OFF, set CS “L”. When CS is “H”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may cause malfunction, mistake write or so. To prevent these, at power ON, set CS “L”. (When CS is in “L” status, all inputs are cancelled.) And at power decline, owing to power line capacity and so forth, low power status may continue long. At this case too, owing to the same reason, malfunction, mistake write may occur, therefore, at power OFF too, set CS “L”. VCC VCC GND VCC CS GND Bad example Good example Fig.86 Timing at power ON/OFF （Bad example）CS pin is pulled up to Vcc. （Good example）It is “L” at power ON/OFF. In this case, CS becomes “H” (active status), and EEPROM may have malfunction, mistake write owing to noise and the likes. Even when CS input is High-Z, the status becomes like this case, which please note. Set 10ms or higher to recharge at power OFF. When power is turned on without observing this condition, IC internal circuit may not be reset, which please note. ○POR citcuit This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS is “H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe the follwing conditions. 1. Set CS=”L” 2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action. tR VCC Recommended conditions of tR, tOFF, Vbot tR tOFF 10m s or below Vbot V bot 100m s or below 10m s or higher 0.2V or below 0 ○LVCC circuit t O FF 10m s or higher 0.3V or below Fig.87 Rise waveform diagram LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write. At LVCC voltage (Typ.=1.2V) or below, it prevent data rewrite. 8) Noise countermeasures ○VCC noise (bypass capacitor) When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a by pass capacitor (0.1μF) between IC VCC and GND, At that moment, attach it as close to IC as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND. ○SK noise When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement.To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about 0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall time as small as possible. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 20/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note ●Note ofn use (1) Described numeric values and data are design representative values, and the values are not guaranteed. (2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC. (3) Absolute Maximum Ratings If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, IC may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to IC. (4) GND electric potential Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is not lower than that of GND terminal in consideration of transition status. (5) Heat design In consideration of allowable loss in actual use condition, carry out heat design with sufficient margin. (6) Terminal to terminal shortcircuit and wrong packaging When to package IC onto a board, pay sufficient attention to IC direction and displacement. Wrong packaging may destruct IC. And in the case of shortcircuit between IC terminals and terminals and power source, terminal and GND owing to foreign matter, IC may be destructed. (7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 21/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Serial EEPROM Series High Reliability Series EEPROMs Microwire BUS BR93H□□-WC Series ●Description BR93H□□-WC Series is a serial EEPROM of serial 3-line interface method. ●Features 1) Withstands electrostatic voltage 8kV, (twice more than other series)（HBM method typ.） 2) Wide action range -40℃～+125℃（-40℃～+85℃, -40℃～+105℃ in other series） 3) Conforming to Microwire BUS 4) Highly reliable connection by Au pad and Au wire 5) Address auto increment function at read action 6) Write mistake prevention function Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage 7) Program cycle auto delete and auto end function 8) Program condition display by READY / BUSY 9) Low current consumption At write action (at 5V) : 0.6mA (Typ.) At read action (at 5V) : 0.6mA (Typ.) At standby action (at 5V) : 0.1μA (Typ.)(CMOS input) 10) Built-in noise filter CS, SK, DI terminals 11) Compact package SOP8/SOP-J8 12) High reliability by ROHM original Double-Cell structure 13) High reliability ultrafine CMOS process 14) Easily connectable with serial port BR93H series 15) Data retention for 40 years 16) Data rewrite up to 1,000,000 times 17) Data at shipment all address FFFFh ●BR93H Series Capacity Bit format Type Power source voltage Package type SOP8 F SOP-J8 RF FJ RFJ 2Kbit 128×16 BR93H56-WC 2.7～5.5V ● ● 4Kbit 256×16 BR93H66-WC 2.7～5.5V ● ● 8Kbit 512×16 BR93H76-WC 2.7～5.5V ● ● 16Kbit 1K×16 BR93H86-WC 2.7～5.5V ● ● www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 22/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●Absolute Maximum Ratings (Ta=25℃) Parameter Impressed voltage Permissible dissipation Symbol Limits VCC -0.3～+6.5 560 (SOP8) Pd Storage temperature range Action temperature range Terminal voltage Unit V *1 560 (SOP-J8) mW *2 Tstg -65～+150 ℃ Topr -40～+125 ℃ ‐ -0.3～VCC+0.3 V *When using at Ta=25℃ or higher, 4.5mW(*1,*2), to be reduced per 1℃. ●Memory cell characteristics (VCC=2.7～5.5V) Parameter Number of data rewrite times *1 Data hold years *1 Min. 1,000,000 500,000 300,000 40 20 Limit Typ. - Max. - Limit Limit Times Times Times Years Years Ta≦85℃ Ta≦105℃ Ta≦125℃ Ta≦25℃ Ta≦85℃ Not 100% TESTED ●Recommended action conditions Parameter Power source voltage Input voltage Symbol VCC VIN Limits 2.7～5.5 0～VCC Unit V ●Electrical characteristics (Unless otherwise specified, Ta=-40～+125℃, VCC=2.7～5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. “L” input voltage VIL -0.3 0.3xVCC V “H” input voltage VIH 0.7xVCC VCC+0.3 V “L” output voltage 1 VOL1 0 0.4 V IOL=2.1mA, 4.0V≦VCC≦5.5V “L” output voltage 2 VOL2 0 0.2 V IOL=100μA “H” output voltage 1 VOH1 2.4 VCC V IOH=-0.4mA, 4.0V≦VCC≦5.5V “H” output voltage 2 VOH2 VCC-0.2 VCC V IOH=-100μA Input leak current ILI -10 10 μA VIN=0V～VCC Output leak current ILO -10 10 μA VOUT=0V～VCC, CS=0V ICC1 3.0 mA fSK=1.25MHz, tE/W=10ms (WRITE) Current consumption at ICC2 1.5 mA fSK=1.25MHz (READ) action ICC3 4.5 mA fSK=1.25MHz, tE/W=10ms (WRAL) Standby current ISB 0.1 10 μA CS=0V, DO=OPEN ◎Radiation resistance design is not made. ●Action timing characteristics (Unless otherwise specified, Ta=-40～+125℃, VCC=2.7～5.5V) Parameter Symbol Min. Typ. SK frequency fSK SK “H” time tSKH 250 SK “L” time tSKL 250 CS “L” time tCS 200 CS setup time tCSS 200 DI setup time tDIS 100 CS hold time tCSH 0 DI hold time tDIH 100 Data “1” output delay time tPD1 Data “0” output delay time tPD0 Time from CS to output establishment tSV Time from CS to High-Z tDF Write cycle time tE/W 7 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 23/40 Max. 1.25 300 300 200 200 10 Unit MHz ns ns ns ns ns ns ns ns ns ns ns ms 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note ●Sync data input / output timing CS tCSS tSKH tSKL tCSH SK tDIS tDIH DI tPD1 tPD0 DO (READ) tDF DO (WRITE) STATUS VALID Fig.1 Sync data input / output timing diagram ○Data is taken by DI sync with the rise of SK. ○At read action, data is output from DO in sync with the rise of SK. ○The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area DO where CS is “H”, and valid until the next command start bit is input. And, white CS is “L”, DO becomes High-Z. ○After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following action mode. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 24/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●BR93H□□-WC Technical Note Characteristic data www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 25/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●BR93H□□-WC Technical Note Characteristic data www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 26/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●Block diagram Power source voltage detection Command decode CS Control SK Clock generation Address buffer Command register DI High voltage occurrence Write prohibition Data register Address decoder 7bit 8bit 9bit 10bit 7bit 8bit 9bit 10bit R/W amplifier 16bit 16bit 2,048 bit 4,096 bit 8,192 bit 16,384 bit EEPROM Dummy bit DO Fig. 27 Block diagram ●Pin assignment and function VCC NC TEST GND VCC SK DI TEST1 GND BR93H66RF-WC:SOP8 BR93H66RFJ-WC:SOP-J8 BR93H76RF-WC:SOP8 BR93H76RFJ-WC:SOP-J8 BR93H86RF-WC:SOP8 BR93H86RFJ-WC:SOP-J8 BR93H56RF-WC:SOP8 BR93H56RFJ-WC:SOP-J8 CS TEST2 CS DO SK DI DO Fig.28 Pin assignment diagram Pin name Vcc GND CS SK DI DO NC TEST1 TEST2 TEST I/O Input Input Input Output - www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Function Power source All input / output reference voltage, 0V Chip select input Serial clock input Start bit, ope code, address, and serial data input Serial data output, READY / BUSY internal condition display output Non connected terminal, Vcc, GND or OPEN TEST terminal, GND or OPEN TEST terminal, Vcc, GND or OPEN TEST terminal, GND or OPEN 27/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series ●Description of operations Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input),DO (serial data output) ,and CS (chip select) for device selection. When to connect one EEPROM to a microcontroller, connect it as shown in Fig.29-(a) or Fig.29-(b). When to use the input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Fig.29-(b) (Refer to pages 31/35.), and connection by 3 lines is available. In the case of plural connections, refer to Fig. 29-(c). CS CS CS CS SK SK SK SK DO DI DO DI DI DO DO Fig.29-(a) Connection by 4 lines Fig.29-(b) Connection by 3 lines CS SK DI DO CS3 CS1 CS0 SK DO DI BR93HXX CS SK DI DO BR93HXX Microcontroller Microcontroller CS SK DI DO Microcontroller Device 1 Device 2 Device 3 Fig.29-(c) Connection example of plural devices Fig.29 Connection method with microcontroller Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called a start bit. After input of the start bit, input ope code, address and data. Address and data are input all in MSB first manners. “0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO of the microcontroller, input “0” before the start bit input, to control the bit width. ●Command mode Command *1 Read (READ) Write enable (WEN) *2 Write (WRITE) *2,3 Write all (WRAL) Write disable (WDS) Address Start bit 1 Ope code 10 1 1 1 00 01 00 1 1 ****** 1 1 ******** A7,A6,A5,A4,A3,A2,A1,A0 A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(WRITE DATA) 0 1 * * * * * B0 0 1 * * * * * B2,B1,B0 D15~D0(WRITE DATA) 1 00 0 0 ****** 0 0 ******** BR93H56/66-WC A7,A6,A5,A4,A3,A2,A1,A0 ・ Input the address and the data in MSB first manners. ・ As for *, input either VIH or VIL. *Start bit Acceptance of all the commands of this IC starts at recognition of the start bit. The start bit means the first “1” input after the rise of CS. Data BR93H76/86-WC A9,A8,A7,A6,A5,A4,A3,A2,A1,A0 D15~D0(READ DATA) A7 and B0 of BR93H56-WC becomes Don't Care. A9 and B2 of BR93H76-WC becomes Don't Care. *1 As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and address data in significant order are sequentially output continuously. (Auto increment function) *2 When the read and the write all commands are executed, data written in the selected memory cell is automatically deleted, and input data is written. *3 For the write all command, data written in memory cell of the areas designated by B2, B1, and B0, are automatically deleted, and input data is written in bulk. ●Write all area B2 0 0 0 0 1 1 1 1 B1 B0 0 0 0 1 1 0 1 1 0 0 0 1 1 0 1 1 Write area 000h～07Fh 080h～0FFh 100h～17Fh 180h～1FFh 200h～27Fh 280h～2FFh 300h～37Fh 380h～3FFh Designation of B2, B1, and B0 H56 ＊ ＊ ＊ H66 ＊ ＊ B0 H76 ＊ B1 B0 H86 B2 B1 B0 ・The write all command is written in bulk in 2Kbit unit. The write area can be selected up to 3bit. Confirm the settings and write areas of the above B2, B1, and B0. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 28/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note ●Timing chart ～ ～ ～ ～ ～ ～ 1) Read cycle (READ) CS ～ ～ *1 1 4 n n+1 ～ ～ DI 2 ～ ～ 1 ～ ～ SK Am 0 A1 ～ ～ 1 A0 *2 D0 D1 D15 D14 ～ ～ D14 ～ ～ D15 ～ ～ ～ ～ ～ ～ 0 DO High-Z BR93H56/66-WC : n=27, m=7 BR93H76/86-WC : n=29, m=9 *2 The following address data output （auto increment function） *1 Start bit When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as a start bit, and the following operation is started. This is common to all the commands to described hereafter. Fig. 30 Read cycle ○When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK. This IC has address auto increment function valid only at read command. This is the function where after the above read execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto increment, keep CS at “H”. 2) Write cycle (WRITE) ～ ～ ～ ～ ～ ～ tCS CS 2 n 4 A1 A0 D15 D14 D1 D0 ～ ～ Am BR93H56/66-WC : n=27, m=7 BR93H76/86-WC : n=29, m=9 ～ ～ 1 ～ ～ 0 ～ ～ 1 ～ ～ ～ ～ DI ～ ～ 1 ～ ～ ～ ～ SK STATUS tSV READY ～ ～ DO BUSY High-Z tE/W Fig. 31 Write cycle ○In this command, input 16bit data (D15~D0) are written to designated addresses (Am~A0). The actual write starts by the fall of CS of D0 taken SK clock(n-th clock from the start bit input), to the rise of the (n+1)-th clock. When STATUS is not detected, (CS="L" fixed) Max. 10ms in conformity with tE/W, and when STATUS is detected (CS="H"), all commands are not accepted for areas where "L" (BUSY) is output from D0, therefore, do not input any command. Write is not made even if CS is started after input of clock after (n+1)-th clocks. Note) Take tSKH or more from the rise of the n-th clock to the fall of CS. 3) Write all cycyle (WRAL) tCS CS SK 1 DI 1 2 0 5 0 0 1 m B2 STATUS BR93H56/66-WC : n=27, m=9 BR93H76/86-WC : n=29, m=11 n B1 B0 D15 D1 D0 tSV DO BUSY READY High-Z Fig. 32 Write all cycle tE/W ○In this command, input 16bit data is written simultaneously to designated block for 128 words. Data is writen in bulk at a write time of only Max. 10ms in conformity with tE/W. When writing data to all addresses, designate each block by B2, B1, and B0, and execute write. Write time is Max.10ms. The actual write starts by the fall of CS from the rise of D0 taken at SK clock (n-th clock from the start bit input), to the rise of the (n+1)-th clock. When CS is ended after clock input after the rise of the (n+1)-th clock, command is cancelled, and write is not completed. Note)Take tSKH or more from the rise of the n-th clock to the fall of CS. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 29/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note 4) Write enable (WEN) / disable (WDS) cycle ～ ～ CS 1 2 3 4 5 6 7 8 ～ ～ SK 1 0 BR93H56/66-WC : n=11 BR93H76/86-WC : n=13 0 ～ ～ DI n ～ ～ ENABLE=1 1 DISABLE=0 0 DO High-Z Fig. 33 Write enable (WEN) / disable (WDS) cycle ○At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it is necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write disable command is executed or the power is turned off. However, the read command is valid irrespective of write enable / disable command. Input to SK after 6 clocks of this command is available by either “H” or “L”, but be sure to input it. ○When the write enable command is executed after power on, write enable status gets in. When the write disable command is executed then, the IC gets in write disable status as same as at power on, and then the write command is cancelled thereafter in software manner. However, the read command is executable. In write enable status, even when the write command is input by mistake, write is started. To prevent such a mistake, it is recommended to execute the write disable command after completion of write. ●Application 1) Method to cancel each command ○READ Start bit Ope code Address 1bit 2bit 8bit *1 *1 Address is 8 bits in BR93H56-WC, and BR93H66-WC. Address is 10 bits in BR93H76-WC, and BR93H86-WC. Data 16bit Cancel is available in all areas in read mode. ●Method to cancel：cancel by CS=“L” Fig.34 READ cancel available timing ○WRITE, WRAL ・Rise of 27clock SK DI 27 26 D1 a *2 29 28 D0 b c Enlarged figure Start bit 1bit Ope code Address 2bit 8bit *1 Data tE/W 16bit a b a：From start bit to 27 clock rise Cancel by CS=“L” b：27 clock rise and after *2 Cancellation is not available by any means. If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. c：28 clock rise and after *3 Cancel by CS=“L” However, when write is started in b area (CS is ended), cancellation is not available by any means. And when SK clock is input continuously, cancellation is not available. Fig.35 WRITE, WRAL cancel available timing www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 30/40 C *1 Address is 8 bits in BR93H56/66-WC Address is 10 bits in BR93H76/86-WC *2 27 clocks in BR93H56/66-WC 29 clocks in BR93H76/86-WC *3 28 clocks in BR93H56/66-WC 30 clocks in BR93H76/86-WC Note 1) If Vcc is made OFF in this area, designated address data is not guaranteed, therefore write once again. Note 2) If CS is started at the same timing as that of the SK rise, write execution/cancel becomes unstable, therefore, it is recommended to fail in SK=”L” area. As for SK rise, recommend timing of tCSS/tCSH or higher. 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series 2) Equivalent circuit ○Output circuit DO OEint. Fig.36 Output circuit (DO) ○Input circuit RESET int. TEST1 (TEST) LPF CS TESTint. CSint. EN Fig.37 Input circuit (CS) Fig.38 Input circuit (TEST1, TEST) EN TEST2 SK DI LPF Fig.39 3) SK(DI)int. Fig.40 Input circuit (TEST2) Input circuit (SK, DI) I/O peripheral circuit 3-1) Pull down CS. By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented. Refer to the item 6) Notes at power ON/OFF in page 34/35. ○Pull down resistance Rpd of CS pin To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC. Rpd ≧ Microcontroller VOHM “H” output VOHM ≧ EEPROM VIHE IOHM Rpd VOHM IOHM VIHE ・・・① ・・・② Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA, from the equation ①, Rpd ≧ “L” input ∴ Rpd ≧ 2.4 -3 2×10 1.2 [kΩ] With the value of Rpd to satisfy the above equation, VOHM becomes 2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied. Fig.41 CS pull down resistance www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. ・VIHE ・VOHM ・IOHM 31/40 : EEPROM VIH specifications : Microcontroller VOH specifications :Microcontroller IOH specifications 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series 3-2) DO is available in both pull up and pull down. Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to pull down and pull up DO. When there is no influence upon the microcontroller actions, DO may be OPEN. If DO is OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes thisas a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such output, pull up DO pin for improvement. CS “H” CS SK SK Enlarged D0 DI DI High-Z READY DO High-Z DO BUSY BUSY CS=SK=DI=”H” When DO=OPEN Improvement by DO pull up DO READY BUSY CS=SK=DI=”H” When DO=pull up Fig.42 READY output timing at DO=OPEN ○Pull up resistance Rpu and pull down resistance Rpd of DO pin As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC. Rpu ≧ Microcontroller VILM EEPROM Rpu IOLE VOLE Vcc－VOLE VOLE ≦ VILM ・・・③ ・・・④ Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V, from the equation ③, “L” input Rpu ≧ “L” output ∴ Rpu ≧ 5－0.4 -3 2.1×10 2.2 [kΩ] With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied. ・VOLE ・IOLE ・VILM ・VOLE : EEPROM VOL specifications ・IOLE : EEPROM IOL specifications ・VILM : Microcontroller VIL specifications Fig.43 DO pull up resistance Rpd ≧ EEPROM Microcontroller VIHM “H” input IOLE VOHE ≧ IOHE ・・・⑤ IOHE VIHM ・・・⑥ Example) When VCC =5V, VOHE=Vcc－0.2V, IOHE=0.1mA, VIHM=Vcc×0.7V from the equation ⑤ VOHE Rpd VOHE “H” output Rpd ≧ ∴ Rpd ≧ 5－0.2 -3 0.1×10 48 [kΩ] With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied. Fig.44 DO pull down resistance www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. ・VOHE : EEPROM VOH specifications ・IOHE : EEPROM IOH specifications ・VIHM : Microcontroller VIH specifications 32/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note ○READY / BUSY status display (DO terminal) (common to BR93H56-WC, BR93H66-WC, BR93H76-WC, BR93H86-WC) This display outputs the internal status signal. When CS is started after tCS (Min.200ns) from CS fall after write command input, “H” or “L” output. R/B display＝“L” (BUSY) = write under execution After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically. And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted. （DO status） R/B display = “H” (READY) = command wait status Even after tE/W (max.10ms) from write of the memory cell, the following command is accepted. Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore, （DO status） DI=“L” in the area CS=“H”. (Especially, in the case of shared input port, attention is required.) *Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted. Therefore, status READY output is cancelled, and malfunction and mistake write may be made. STATUS CS SK CLOCK DI WRITE INSTRUCTION DO tSV High-Z READY BUSY Fig.45 R/B status output timing chart 4) When to directly connect DI and DO This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart, meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control line. Microcontroller EEPROM DI/O PORT DI R DO Fig.46 DI, DO control line common connection ○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input. Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the same time in the following points. 4-1) 1 clock cycle to take in A0 address data at read command Dummy bit “0” is output to DO terminal. →When address data A0 = “1” input, through current route occurs. EEPROM CS input “H” EEPROM SK input A1 EEPROM DI input A0 Collision of DI input and DO output EEPROM DO output Microcontroller DI/O port 0 High-Z A1 D15 D14 D13 A0 Microcontroller output High-Z Microcontroller input Fig.47 Collision timing at read data output at DI, DO direct connection www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 33/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series 4-2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output. When the next start bit input is recognized, “HIGH-Z” gets in. →Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”, READY output “H” is output from DO terminal, and through current route occurs. Feedback input at timing of these 4-1) and 4-2) does not cause disorder in basic operations, if resistance R is inserted. ～ ～ EEPROM SK input Write command EEPROM DI input Write command EEPROM DO output Write command ～ ～ Write command ～ ～ EEPROM CS input ～ ～ ～ ～ ～ ～ READY ～ ～ ～ ～ BUSY High-Z READY Collision of DI input and DO output BUSY Microcontroller output Microcontroller input ～ ～ READY Write command ～ ～ Microcontroller DI/O port Microcontroller output Fig.48 Collision timing at DI, DO direct connection ○Selection of resistance value R The resistance R becomes through current limit resistance at data collision. When through current flows, noises of power source line and instantaneous stop of power source may occur. When allowable through current is defined as I, the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL, even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence upon basic operations. 4-3) Address data A0 = “1” input, dummy bit “0” output timing (When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI) ・Make the through current to EEPROM 10mA or below. ・See to it that the input level VIH of EEPROM should satisfy the following. Conditions Microcontroller VOHM ≦ VIHE EEPROM VOHM ≦ IOHM×R + VOLE DI/O PORT “H” output At this moment, if VOLE=0V, DI VOHM ≦ IOHM×R VOHM IOHM R ∴ DO VOLE ・VIHE ・VOLE ・VOHM ・IOHM “L” output Fig.49 R ≧ VOHM IOHM ・・・⑦ : EEPROM VIH specifications : EEPROM VOL specifications : Microcontroller VOH specifications : Microcontroller IOH specifications Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 34/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series 4-4) DO status READY output timing (When the microcontroller DI/O is “L”, EEPROM DO outputs “H”, and “L” is input to DI) ・Set the EEPROM input level VIL so as to satisfy the following. Conditions Microcontroller “L” output VOLM ≧ VILE EEPROM DI/O PORT DI VOLM ≧ VOHE – IOLM×R VOLM As this moment, if VOHE=Vcc, VOLM ≧ Vcc – IOLM×R R IOHM DO R ≧ ∴ VOHE Vcc – VOLM “H” output ・VILE ・VOHE ・VOLM ・IOLM IOLM ・・・⑧ : EEPROM VIL specifications : EEPROM VOH specifications : Microcontroller VOL specifications : Microcontroller IOL specifications Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA, From the equation ⑦, R ≧ R ≧ ∴ R ≧ From the equation ⑧, VOHM R ≧ IOHM 5 R ≧ -3 0.4×10 12.5 [kΩ] ・・・⑨ ∴ R ≧ Vcc – VOLM IOLM 5 – 0.4 -3 2.1×10 2.2 [kΩ] ・・・⑩ Therefore, from the equations ⑨ and ⑩, ∴ Fig.50 R ≧ 12.5 [kΩ] Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output) 5) Notes at test pin wrong input There is no influence of external input upon TEST2 pin. For TEST1 (TEST)pin, input must be GND or OPEN. If H level is input, the following may occur, 1. At WEN, WDS, READ command input There is no influence by TEST1 (TEST) pin. 2. WRITE, WRAL command input * BR93H56-WC, BR93H66-WC, address 8 bits BR93H76-WC, BR93H86-WC, address 10 bits Start bit Ope code 1bits 2bits Address* 8bits Data tE/W 16bits a Write start CS rise timing Fig.51 TEST1(TEST) pin wrong input timing a：There is no influence by TEST1 (TEST) pin. b：If H during write execution, it may not be written correctly. And H area remains BUSY and READY does not go back. Avoid noise input, and at use, be sure to connect it to GND terminal or set it OPEN. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 35/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series 6) Notes on power ON/OFF ・At power ON/OFF, set CS “L”. When CS is “H”, this IC gets in input accept status (active). At power ON, set CS “L” to prevent malfunction from noise. (When CS is in “L” status, all inputs are cancelled.) At power decline low power status may prevail. Therefore, at power OFF, set CS “L” to prevent malfunction from noise. VCC VCC GND VCC CS GND Bad example Good example Fig.52 Timing at power ON/OFF （Bad example）CS pin is pulled up to Vcc. In this case, CS becomes “H” (active status), EEPROM may malfunction or have write error due to noises. This is true even when CS input is High-Z. （Good example）It is “L” at power ON/OFF. Set 10ms or higher to recharge at power OFF. When power is turned on without observing this condition, IC internal circuit may not be reset. ○POR citcuit This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS is “H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe the follwing conditions. 1. Set CS=”L” 2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action. tR VCC Recommended conditions of tR, tOFF, Vbot tR 10m s or below tOFF t O FF V bot 10m s or higher 0.3V or below 100m s or below 10m s or higher 0.2V or below Vbot 0 Fig.53 Rise waveform diagram ○LVCC circuit LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write. At LVCC voltage (Typ.=1.9V) or below, it prevent data rewrite. 7) Noise countermeasures ○VCC noise (bypass capacitor) When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a by pass capacitor (0.1μF) between IC VCC and GND, At that moment, attach it as close to IC as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND. ○SK noise When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about 0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall time as small as possible. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 36/40 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note ●Cautions on use (1) Described numeric values and data are design representative values, and the values are not guaranteed. (2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC. (3) Absolute Maximum Ratings If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, IC may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to IC. (4) GND electric potential Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is not lower than that of GND terminal in consideration of transition status. (5) Heat design In consideration of allowable loss in actual use condition, carry out heat design with sufficient margin. (6) Terminal to terminal shortcircuit and wrong packaging When to package IC onto a board, pay sufficient attention to IC direction and displacement. Wrong packaging may destruct IC. And in the case of shortcircuit between IC terminals and terminals and power source, terminal and GND owing to foreign matter, IC may be destructed. (7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 37/40 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series B R 9 ROHM Type name 3 L 4 BUSType Operating 93：Microwire temperature L:-40℃~+85℃ A:-40℃~+105℃ H:-40℃~+125℃ 6 F Capacity J - Package type F,RF :SOP8 FJ,RFJ :SOP-J8 FV,RFV : SSOP-B8 FVT,RFVT : TSSOP-B8 RFVJ : TSSOP-B8J RFVM : MSOP8 46=1K 56=2K 66=4K 76=8K 86=16K W Double cell L:W A:WM H:WC E 2 Package specifications E2：reel shape emboss taping TR：reel shape emboss taping SOP8 <Tape and Reel information> 7 6 5 +6° 4° −4° 6.2±0.3 4.4±0.2 0.3MIN 8 1 2 3 0.9±0.15 5.0±0.2 (MAX 5.35 include BURR) Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 4 0.595 1.5±0.1 +0.1 0.17 -0.05 0.11 S 1.27 0.42±0.1 1pin Reel (Unit : mm) Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. SOP-J8 <Tape and Reel information> 4.9±0.2 (MAX 5.25 include BURR) +6° 4° −4° 6 5 0.45MIN 7 3.9±0.2 6.0±0.3 8 1 2 3 Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 4 0.545 0.2±0.1 0.175 1.375±0.1 S 1.27 0.42±0.1 0.1 S 1pin Reel (Unit : mm) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 38/40 Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. 2011.02 - Rev.F BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series Technical Note SSOP-B8 <Tape and Reel information> 3.0 ± 0.2 (MAX 3.35 include BURR) 0.3MIN 4.4±0.2 6.4±0.3 8 76 5 Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1.15±0.1 1 23 4 0.15 ± 0.1 0.1 S 0.1 +0.06 0.22 -0.04 (0.52) 0.08 M 0.65 1pin Reel (Unit : mm) Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. TSSOP-B8 <Tape and Reel information> 3.0 ± 0.1 (MAX 3.35 include BURR) 8 7 6 4±4 3000pcs 2 3 4 1PIN MARK E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1.0±0.2 0.5±0.15 6.4±0.2 4.4±0.1 1 +0.05 0.145 –0.03 S 0.1±0.05 1.2MAX Embossed carrier tape Quantity Direction of feed 0.525 1.0±0.05 Tape 5 0.08 S +0.05 0.245 –0.04 0.08 Direction of feed M 1pin 0.65 Reel (Unit : mm) ∗ Order quantity needs to be multiple of the minimum quantity. TSSOP-B8J <Tape and Reel information> 3.0 ± 0.1 (MAX 3.35 include BURR) 5 4.9±0.2 0.45±0.15 2 3 4 1PIN MARK Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 0.95±0.2 6 +0.05 0.145 – 0.03 0.525 S 0.1±0.05 0.85±0.05 1 1.1MAX 7 3.0±0.1 8 4±4 0.08 S +0.05 0.32 –0.04 0.08 M 1pin 0.65 Reel (Unit : mm) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 39/40 Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. 2011.02 - Rev.F Technical Note BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series MSOP8 <Tape and Reel information> 2.8±0.1 4.0±0.2 8 7 6 5 0.6±0.2 +6° 4° −4° 0.29±0.15 2.9±0.1 (MAX 3.25 include BURR) Tape Embossed carrier tape Quantity 3000pcs Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1 2 3 4 1PIN MARK 1pin +0.05 0.145 –0.03 0.475 0.08±0.05 0.75±0.05 0.9MAX S +0.05 0.22 –0.04 0.08 S Direction of feed 0.65 Reel (Unit : mm) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 40/40 ∗ Order quantity needs to be multiple of the minimum quantity. 2011.02 - Rev.F Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A