BSC094N03S G OptiMOS™2 Power-Transistor Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS(on),max 9.4 mΩ • Optimized technology for notebook DC/DC converters ID 35 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSC094N03S G PG-TDSON-8 94N03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 35 T C=100 °C 35 T A=25 °C, R thJA=45 K/W 2) Unit A 14.6 Pulsed drain current I D,pulse T C=25 °C3) 140 Avalanche energy, single pulse E AS I D=35 A, R GS=25 Ω 90 mJ Reverse diode dv /dt dv /dt I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature T j, T stg V 52 W 2.8 -55 ... 150 IEC climatic category; DIN IEC 68-1 Rev. 1.91 ±20 °C 55/150/56 page 1 2009-11-03 BSC094N03S G Parameter Values Symbol Conditions Unit min. typ. max. - - 2.4 Thermal characteristics Thermal resistance, junction - case R thJC bottom top Thermal resistance, R thJA junction - ambient K/W 20 minimal footprint - - 62 6 cm2 cooling area2) - - 45 30 - - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=25 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 11.2 14 mΩ V GS=10 V, I D=35 A - 7.8 9.4 - 1 - Ω 26 53 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=35 A J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 Rev. 1.91 page 2 2009-11-03 BSC094N03S G Parameter Values Symbol Conditions Unit min. typ. max. - 1350 1800 - 480 640 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 64 96 Turn-on delay time t d(on) - 4.5 6.8 Rise time tr - 3.8 5.7 Turn-off delay time t d(off) - 18 27 Fall time tf - 3.0 4.5 Gate to source charge Q gs - 4.3 5.7 Gate charge at threshold Q g(th) - 2.2 2.9 Gate to drain charge Q gd - 2.8 4.2 Switching charge Q sw - 4.9 7.0 Gate charge total Qg - 10 14 Gate plateau voltage V plateau - 3.2 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V - 9 12 Output charge Q oss V DD=15 V, V GS=0 V - 11 14 - - 35 - - 140 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=17.5 A, R G=2.7 Ω pF ns Gate Charge Characteristics 3) V DD=15 V, I D=17.5 A, V GS=0 to 5 V nC V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=35 A, T j=25 °C - 0.93 1.2 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 10 nC 3) T C=25 °C A See figure 16 for gate charge parameter definition Rev. 1.91 page 3 2009-11-03 BSC094N03S G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 60 40 50 30 I D [A] P tot [W] 40 30 20 20 10 10 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 160 T C [°C] 1000 101 10 100 1 limited by on-state resistance 1 µs 102 100 10 µs 0.5 100 µs 101 10 1 ms 0.1 0.05 10-1 10 ms 100 0.2 Z thJC [K/W] I D [A] DC 0.02 0.1 0.01 1 single pulse 10-1 0.1 10 Rev. 1.91 10-2 0.1 1 -1 10 10 0 V DS [V] 10 100 1 10 2 page 4 0.01 0 0 0 0 0 0 10-6 10-5 10-4 10-3 10-2 10-1 t p [s] 2009-11-03 BSC094N03S G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 80 30 3.2 V 3V 10 V 70 4.5 V 3.7 V 3.4 V 25 60 4V 20 R DS(on) [mΩ] I D [A] 50 3.7 V 40 30 4V 15 4.5 V 10 3.4 V 10 V 20 3.2 V 5 10 3V 2.8 V 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 80 80 70 70 60 60 50 50 g fs [S] I D [A] parameter: T j 40 30 30 20 20 150 °C 25 °C 10 10 0 0 0 1 2 3 4 5 0 10 20 30 40 50 60 I D [A] V GS [V] Rev. 1.91 40 page 5 2009-11-03 BSC094N03S G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=35 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 16 2.5 14 2 12 250 µA 10 8 V GS(th) [V] R DS(on) [mΩ] 98 % typ 6 1.5 25 µA 1 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 10000 Ciss 103 102 150 °C 25 °C 1000 150 °C, 98% I F [A] C [pF] Coss 102 101 25 °C, 98% 100 Crss 100 101 10-1 10 0 5 10 15 20 25 30 V DS [V] Rev. 1.91 0 0.5 1 1.5 2 V SD [V] page 6 2009-11-03 BSC094N03S G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=17.5 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 10 6V 100 °C 25 °C 24 V 8 V GS [V] I AV [A] 125 °C 10 6 4 2 1 0 1 10 100 1000 0 5 10 15 20 25 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 40 V GS Qg V BR(DSS) [V] 35 30 V g s(th) 25 Q g(th) Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.91 page 7 2009-11-03 BSC094N03S G Package Outline PG-TDSON-8 PG-TDSON-8: Outline Rev. 1.91 page 8 2009-11-03 BSC094N03S G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.91 page 9 2009-11-03 BSC094N03S G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.91 page 10 2009-11-03