INFINEON BSC094N03SG

BSC094N03S G
OptiMOS™2 Power-Transistor
Product Summary
Features
V DS
30
V
• Fast switching MOSFET for SMPS
R DS(on),max
9.4
mΩ
• Optimized technology for notebook DC/DC converters
ID
35
A
• Qualified according to JEDEC1) for target applications
PG-TDSON-8
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC094N03S G
PG-TDSON-8
94N03S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
35
T C=100 °C
35
T A=25 °C,
R thJA=45 K/W 2)
Unit
A
14.6
Pulsed drain current
I D,pulse
T C=25 °C3)
140
Avalanche energy, single pulse
E AS
I D=35 A, R GS=25 Ω
90
mJ
Reverse diode dv /dt
dv /dt
I D=40 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
T A=25 °C,
R thJA=45 K/W 2)
Operating and storage temperature
T j, T stg
V
52
W
2.8
-55 ... 150
IEC climatic category; DIN IEC 68-1
Rev. 1.91
±20
°C
55/150/56
page 1
2009-11-03
BSC094N03S G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.4
Thermal characteristics
Thermal resistance, junction - case
R thJC
bottom
top
Thermal resistance,
R thJA
junction - ambient
K/W
20
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
45
30
-
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=25 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=30 A
-
11.2
14
mΩ
V GS=10 V, I D=35 A
-
7.8
9.4
-
1
-
Ω
26
53
-
S
Gate resistance
RG
Transconductance
g fs
1)
|V DS|>2|I D|R DS(on)max,
I D=35 A
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3
Rev. 1.91
page 2
2009-11-03
BSC094N03S G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1350
1800
-
480
640
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
64
96
Turn-on delay time
t d(on)
-
4.5
6.8
Rise time
tr
-
3.8
5.7
Turn-off delay time
t d(off)
-
18
27
Fall time
tf
-
3.0
4.5
Gate to source charge
Q gs
-
4.3
5.7
Gate charge at threshold
Q g(th)
-
2.2
2.9
Gate to drain charge
Q gd
-
2.8
4.2
Switching charge
Q sw
-
4.9
7.0
Gate charge total
Qg
-
10
14
Gate plateau voltage
V plateau
-
3.2
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
9
12
Output charge
Q oss
V DD=15 V, V GS=0 V
-
11
14
-
-
35
-
-
140
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=17.5 A, R G=2.7 Ω
pF
ns
Gate Charge Characteristics 3)
V DD=15 V, I D=17.5 A,
V GS=0 to 5 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=35 A,
T j=25 °C
-
0.93
1.2
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
10
nC
3)
T C=25 °C
A
See figure 16 for gate charge parameter definition
Rev. 1.91
page 3
2009-11-03
BSC094N03S G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
60
40
50
30
I D [A]
P tot [W]
40
30
20
20
10
10
0
0
0
40
80
120
160
0
40
80
T C [°C]
120
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
160
T C [°C]
1000
101
10
100
1
limited by on-state
resistance
1 µs
102
100
10 µs
0.5
100 µs
101
10
1 ms
0.1
0.05
10-1
10 ms
100
0.2
Z thJC [K/W]
I D [A]
DC
0.02
0.1
0.01
1
single pulse
10-1
0.1
10
Rev. 1.91
10-2
0.1
1
-1
10
10
0
V DS [V]
10
100
1
10
2
page 4
0.01
0
0
0
0
0
0
10-6
10-5
10-4
10-3
10-2
10-1
t p [s]
2009-11-03
BSC094N03S G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
80
30
3.2 V
3V
10 V
70
4.5 V
3.7 V
3.4 V
25
60
4V
20
R DS(on) [mΩ]
I D [A]
50
3.7 V
40
30
4V
15
4.5 V
10
3.4 V
10 V
20
3.2 V
5
10
3V
2.8 V
0
0
0
1
2
3
0
10
20
V DS [V]
30
40
50
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
80
80
70
70
60
60
50
50
g fs [S]
I D [A]
parameter: T j
40
30
30
20
20
150 °C
25 °C
10
10
0
0
0
1
2
3
4
5
0
10
20
30
40
50
60
I D [A]
V GS [V]
Rev. 1.91
40
page 5
2009-11-03
BSC094N03S G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=35 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
16
2.5
14
2
12
250 µA
10
8
V GS(th) [V]
R DS(on) [mΩ]
98 %
typ
6
1.5
25 µA
1
4
0.5
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
103
102
150 °C
25 °C
1000
150 °C, 98%
I F [A]
C [pF]
Coss
102
101
25 °C, 98%
100
Crss
100
101
10-1
10
0
5
10
15
20
25
30
V DS [V]
Rev. 1.91
0
0.5
1
1.5
2
V SD [V]
page 6
2009-11-03
BSC094N03S G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=17.5 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
10
6V
100 °C
25 °C
24 V
8
V GS [V]
I AV [A]
125 °C
10
6
4
2
1
0
1
10
100
1000
0
5
10
15
20
25
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
40
V GS
Qg
V BR(DSS) [V]
35
30
V g s(th)
25
Q g(th)
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.91
page 7
2009-11-03
BSC094N03S G
Package Outline
PG-TDSON-8
PG-TDSON-8: Outline
Rev. 1.91
page 8
2009-11-03
BSC094N03S G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 1.91
page 9
2009-11-03
BSC094N03S G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.91
page 10
2009-11-03