BUTW92 ® HIGH CURRENT NPN SILICON TRANSISTOR ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ 3 DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency converters and motor controls. 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 500 V V CEO Collector-Emitter Voltage (I B = 0) 250 V V EBO Emitter-Base Voltage (I C = 0) IE I EM IB Emitter-Current V A Emitter Peak Current (t p < 5ms) 70 A Base Current 15 A 18 A I BM Base Peak Current (t p < 5ms) P tot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj 7 60 o Max. Operating Junction Temperature September 2001 180 W -65 to 150 o C 150 o C 1/4 BUTW92 THERMAL DATA R thj-case Thermal Resistance Junction-case MAX o 0.7 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit 50 1 µA mA 50 µA I CES Collector Cut-off Current (V BE = -1.5V) V CE = 450 V V CE = 450 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CES Collector-Emitter Voltage (V EB =0) I C = 5 mA 500 V V EBO Emitter-Base Voltage (I C = 0) I E = 50 mA 7 V 250 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B =0) T C = 100 o C I C = 200 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 60 A I C = 60 A I B = 15 A I B = 15 A T C = 100 o C V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 60 A I C = 60 A I B = 15 A I B = 15 A T C = 100 o C DC Current Gain I C = 60 A I C = 60 A IC = 5 A h FE ∗ ts tf RESISTIVE LOAD Storage Time Fall Time V CE = 3 V o V CE = 3 V T C = 100 C V CE = 3 V I C = 50 A V CC = 250 V I B1 = -IB2 = 10 A * Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % 2/4 Min. 0.8 1.1 1 1.5 V V 1.9 2 V V 9 6 65 1.2 250 1.4 300 µs ns BUTW92 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 3/4 BUTW92 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4