BYG23T www.vishay.com Vishay General Semiconductor High Voltage Ultrafast Avalanche SMD Rectifiers FEATURES • Glass passivated junction • Low profile package • Ideal for automated placement • Low reverse current • High reverse voltage • Ultra fast reverse recovery time DO-214AC (SMA) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 1300 V IFSM 18 A trr 75 ns ER 5 mJ VF at IF = 1.0 A (TA = 125 °C) 1.39 V TJ max. 150 °C TYPICAL APPLICATIONS For use in high voltage, high frequency rectification specially suited for freewheeling, clamping, snubbering in power supply, ignition drive of HID, UHP and industrial ballast and snubber for PDP TV power supply application. • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG23T UNIT BYG23T Maximum repetitive peak reverse voltage VRRM 1300 V Maximum DC forward current (fig.1) IF (1) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 18 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 0.4 A, TL = 25 °C ER 5 mJ Maximum operating junction temperature TJ 150 °C TSTG - 55 to + 150 °C Storage temperature range Note • Free air, mounted on recommended copper pad area Revision: 13-Oct-11 Document Number: 89429 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23T www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TA = 25 °C Instantaneous forward voltage (1) IF = 1.0 A Reverse current (2) VR = 1300 V Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Forward recovery time Peak forward voltage IF = 1.5 A, dI/dt = 12 A/μs, VF = 1.1 x VF max. Typical junction capacitance 4.0 V, 1 MHz VF TA = 125 °C TA = 25 °C TYP. MAX. 1.74 1.9 1.39 1.65 TA = 25 °C TA = 25 °C V - 5.0 2.9 50 trr 65 75 tfr 620 - VFP 9.0 - V CJ 9.0 - pF IR TA = 125 °C UNIT μA ns Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG23T RJA 120 RJM 20 Typical thermal resistance (1) UNIT °C/W Note (1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance R JA - junction to ambient, RJM - junction to mount. ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QANTITY DELIVERY MODE BYG23T-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG23T-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 2.0 1.2 D = 0.5 Average Power Loss (W) 1.8 DC Forward Current (A) 1.0 0.8 0.6 0.4 TM - Measured at the Lead terminal 0.2 D = 0.8 D = 0.3 1.6 D = 0.2 1.4 D = 1.0 D = 0.1 1.2 1.0 0.8 T 0.6 0.4 0.2 D = tp/T tp 0 0 0 25 50 75 100 125 150 175 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Max. Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 13-Oct-11 Document Number: 89429 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23T www.vishay.com Vishay General Semiconductor 100 TA = 150 °C 1 TA = 125 °C TA = 25 °C 0.1 TJ = 25 °C f = 1.0 MHz Vstg = 50 mVp-p 10 1 0.4 0.8 Instantaneous Reverse Current (mA) Junction Capacitance (pF) 10 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 20 TA = 150 °C TA = 125 °C 1 TA = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 1000 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 13-Oct-11 Document Number: 89429 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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