BYW81P-200 BYW81PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 VRMS Capacitance = 7 pF A A K K TO-220AC (Plastic) isolated TO-220AC (Plastic) BYW81P-200 BYW81PI-200 DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-220AC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) Parameter RMS forward current Average forward current δ = 0.5 A A 15 BYW81PI Tc=90°C 15 tp=10ms sinusoidal 200 A - 40 to + 150 - 40 to + 150 °C °C Value Unit 200 V Tstg Tj Storage and junction temperature range Parameter Repetitive peak reverse voltage October 1999 - Ed: 2D 35 Tc=115°C Surge non repetitive forward current VRRM Unit BYW81P IFSM Symbol Value 1/6 BYW81P-200 / BYW81PI-200 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case Value Unit BYW81P 2.0 °C/W BYW81PI 3.5 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Test Conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF ** Max. Unit 20 µA 1.5 mA V Tj = 125°C IF = 12 A 0.85 Tj = 125°C IF = 25 A 1.05 Tj = 25°C IF = 25 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.016 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. Typ. Max. IF = 0.5A IR = 1A Irr = 0.25A 25 IF = 1A VR = 30V dIF/dt = -50A/µs 40 Unit ns tfr Tj = 25°C IF = 1A VFR = 1.1 x VF tr = 10 ns 15 ns VFP Tj = 25°C IF = 1A tr = 10 ns 2 V 2/6 BYW81P-200 / BYW81PI-200 Fig.1 : Average forward power dissipation versus average forward current. 20.0 P F(av)(W) 350 =0.05 17.5 Fig.2 : Peak current versus form factor. =0.1 =0.2 =0.5 IM(A) =1 T 300 15.0 IM 250 12.5 =tp/T 200 tp 10.0 150 T 7.5 P=10W P=20W 100 5.0 P=30W 2.5 50 I F(av)(A) =tp/T tp 20 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.3 : Forward voltage drop versus forward current (maximum values). Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 0.0 0 2.5 5 7.5 10 12.5 15 17.5 1.0 VFM(V) 1.8 1.6 K Zth(j-c) (tp. ) K = Rth(j-c) Tj= 125 oC 1.4 =0.5 0.5 1.2 =0.2 1.0 = 0 .1 0.8 0.6 T 0.2 0.4 0.2 Single pulse IFM(A) 0.0 0.1 1 10 100 200 1.0E-03 Fig.5 : Non repetitive surge peak forward current versus overload duration. (BYW81P) IM(A) 160 150 140 130 120 110 100 90 80 70 60 50 40 IM 30 20 10 0 0.001 =tp/T tp(s) 0.1 1.0E-02 1.0E-01 tp 1. 0E+00 Fig.6 : Non repetitive surge peak forward current versus overload duration. (BYW81PI) IM(A) Tc=25 o C Tc=75 o C Tc=115 o C t t(s) =0.5 0.01 0.1 1 120 110 100 90 80 70 60 50 40 30 IM 20 10 0 0.001 Tc=25 oC Tc=60 o C Tc=90 o C t t(s) =0.5 0.01 0.1 1 3/6 BYW81P-200 / BYW81PI-200 Fig.7 : Average current temperature. (duty cycle : 0.5) (BYW81P) versus ambient IF(av)(A) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 Rth(j-a)=15 o C/W T =tp/T 20 versus ambient IF(av)(A) Rth(j-a)=Rth(j-c) =0.5 Fig.8 : Average current temperature. (duty cycle : 0.5) (BYW81PI) tp 40 Tamb(o C) 60 80 100 120 140 160 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 Rth(j-a)=15 o C/W =0.5 T =tp/T tp 20 40 Tamb(o C) 60 80 100 120 140 160 Fig.10 : Recovery charges versus dIF/dt. 60 120 Rth(j-a)=Rth(j-c) QRR(nC) F=1Mhz Tj=25 oC 90%CONFIDENCE 115 50 IF=IF(av) 110 Tj=100 OC 40 105 30 100 Tj=25 O C 95 20 90 10 85 dIF/dt(A/us) VR(V) 80 1 10 30 50 70 Fig.11 : Peak reverse current versus dIF/dt. 3.0 0 1 20 40 60 80 Fig.12 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125o C] IRM(A) 1.50 90%CONFIDENCE IF=IF(av) 2.5 10 1.25 Tj=100 OC 2.0 1.00 IRM 1.5 0.75 1.0 0.50 QRR Tj=25 O C 0.5 dIF/dt(A/us) 0.0 1 4/6 10 20 40 60 80 0.25 0.00 0 Tj( o C) 25 50 75 100 125 150 BYW81P-200 / BYW81PI-200 PACKAGE MECHANICAL DATA TO-220AC (JEDEC outline) H2 DIMENSIONS A C L5 L7 ØI L6 L2 D L9 F1 L4 M F E G REF. Millimeters Inches A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Marking : Type number Cooling method : C Weight : 1.9 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N PACKAGE MECHANICAL DATA TO-220AC (isolated) B DIMENSIONS C b2 I REF. L F A a1 l2 a2 b1 c1 e A a1 a2 B b1 b2 C c1 c2 e F I L l2 Millimeters Min. 14.23 12.70 10.20 0.64 1.15 4.48 0.35 2.10 4.58 5.85 3.55 2.54 1.45 Max. 15.87 4.50 14.70 10.45 0.96 1.39 4.82 0.65 2.70 5.58 6.85 4.00 3.00 1.75 Inches Min. 0.560 0.500 0.402 0.025 0.045 0.176 0.020 0.083 0.180 0.230 0.140 0.100 0.057 Max. 0.625 0.177 0.579 0.411 0.038 0.055 0.190 0.026 0.106 0.220 0.270 0.157 0.118 0.069 c2 Marking : Type number Cooling method : C Weight : 2.2 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N 5/6 BYW81P-200 / BYW81PI-200 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of thirdparties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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