® ISO 9001 Registered Process C1219 CMOS 1.2µm EEPROM Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold Symbol VTN γN βN IDSATN BVDSSN VTFP(N) Minimum 0.30 0.35 64 16 5 8 Typical 0.475 0.45 78 25 Maximum 0.65 0.55 92 40 Unit V V1/2 µA/V2 mA V V Comments 100x10µm 100x100µm 100x100µm 100x1.5µm N-Channel Native Transistor Symbol Threshold Voltage VTZBN γZBN Body Factor Saturation Current IDSATN Conduction Factor βZBN Minimum – 0.20 0.30 13 45 Typical 0.37 0.45 15.7 55 Maximum 0.52 0.60 18.9 65 Unit V V1/2 mA µA/V2 Comments 100x2.5µm 100x2.5µm 100x2.5µm 100x100µm P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP IDSATP BVDSSP VTFP(P) Minimum – 0.65 0.5 20 –6 –5 –8 Typical – 0.475 0.6 25 –10 Maximum – 0.30 0.7 30 –16 Unit V V1/2 µA/V2 mA V V Comments 100x1.2µm 100x1.2µm 100x100µm 100x1.5µm EECMOS Characteristics Tunnel Oxide Thickness Interpoly Oxide Thickness Buried N+ Sheet Res. Initial Program/Erase Window Unprog. Memory Threshold Endurance Programming Voltage Symbol TTUNLOX TP1P2 ρBN+ Minimum 84 340 200 Typical 88 390 300 3.0 3.0 Maximum 92 440 400 Comments 14 17 Unit nm nm Ω/ V V Cycles V © 1999 IMP, Inc. VT VPP 10,000 12 59 Process C1219 Electrical Characteristics Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Field Oxide Thickness Gate Poly Sheet Res. Bottom Poly Sheet Res. High Resistance Poly Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness Symbol ρN-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TFIELD ρPOLY2 ρPOLY1 ρPOLYHI ρM1 ρM2 TPASS Minimum 1.2 20 Capacitance Gate Oxide Metal-1 to Poly1 Metal-1 to Silicon Metal-2 to Metal-1 Poly-1 to Poly-2 Symbol COX CM1P CM1S CMM CP1P1 Minimum 1.28 60 22.5 25 24 1.5 19 Typical 2.0 35 0.35 110 0.35 25.0 700 35 32 2.0 50 25 200+900 Maximum 2.8 50 Typical 1.38 0.057 0.028 0.035 0.86 Maximum 1.58 160 27.5 45 40 2.5 32 Unit KΩ/ Ω/ µm Ω/ µm nm nm Ω/ Ω/ kΩ/ mΩ/ mΩ/ nm Comments n-well Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 fF/µm2 Comments oxide+nit. Physical Characteristics Starting Material Starting Mat. Resistivity Operating Voltage Well Type Metal Layers Poly Layers Contact Size Via Size Metal-1 Width/Space Metal-2 Width/Space Gate Poly Width/Space Buried N+ Width/Space High Poly Width/Space EPI P <100> 7 - 8.5 Ω-cm 5V N-well 2 2 1.5x1.5µm 1.5x1.5µm 2.5 / 1.5µm 2.5 / 1.5µm 1.5 / 2.0µm 2.5 / 1.75µm 1.5 / 1.5µm N+/P+ Width/Space N+ To P+ Space Tunnel Oxide Width/Space Tunnel Ox. Overlap Bot. Poly Contact To Poly Space Contact Overlap Of Diffusion Contact Overlap Of Poly Metal-1 Overlap Of Contact Metal-1 Overlap Of Via Metal-2 Overlap Of Via Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch 2.0 / 2.0µm 9.0µm 1.5 / 1.5µm 1.0µm 1.5µm 1.0µm 1.0µm 1.0µm 1.0µm 1.0µm 65x65µm 5.0µm 80.0µm Special Feature of C1219 Process: EEPROM process with high resistivity poly resistors and native n-channel devices. 60 C1219-12-99