® ISO 9001 Registered Process C1231 HV BiCMOS 1.2µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSP ON Resistance HVPR0N Minimum Typical Maximum Unit 0.45 36 0.65 0.85 V V mΩcm2 V 1.4 VGS = 5V VDS = 30V Operating Voltage N-Channel Low Voltage Transistor Threshold Voltage VTN γN Body Factor βN Conduction Factor Effective Channel Length LeffN Width Encroachment ∆WN Punch Through Voltage BVDSSN Poly Field Threshold Voltage VTFPN Symbol P-Channel High Voltage Transistor Threshold Voltage HVTP Punch Through Voltage HVBVDSSP ON Resistance HVPR0N P-Channel Low Voltage Transistor Threshold Voltage VTP γP Body Factor βP Conduction Factor Effective Channel Length LeffP Width Encroachment ∆WP BVDSSP Punch Through Voltage Poly Field Threshold Voltage VTFP(P) 0.6 0.65 64.0 1.20 0.8 0.8 75.0 1.35 0.45 V V1/2 µA/V 2 µm µm V V 100x1.4µm 100x1.4µm 100x100µm 100x1.4µm Per side Comments 18 Minimum Typical Maximum Unit – 0.7 – 36 – 0.9 –1.1 V V mΩcm2 11.0 – 0.7 0.40 25.0 1.50 0.40 @VGS = 5V @VDS = 0.1V 1.00 0.95 86.0 1.50 8 10 – 0.9 0.25 20.0 1.35 Comments @VGS = 5V – 0.5 0.55 30.0 1.65 V V1/2 µA/V 2 µm µm V V 100x1.4µm 100x1.4µm 100x100µm 100x1.4µm Per side –8 –10 –18 Symbol COX CM1P CMM Minimum 1.338 0.040 0.043 Typical 1.439 0.046 0.050 Maximum 1.569 0.052 0.057 Unit fF/µm2 fF/µm2 fF/µm2 Comments Symbol High Voltage Vertical NPN Transistor Beta hFE Early Voltage VA BVCEO BVCEO Low Voltage Vertical NPN Transistor Beta hFE Early Voltage VA Cut-Off Frequency fτ Minimum Typical Maximum Unit Comments Capacitance Gate Oxide Metal-1 to Poly1 Metal-2 to Metal-1 © Daily Silver IMP 130 200 35 50 140 34 1.89 V V 240 4.5x4.5µm V GHz 79 Process C1231 Physical Characteristics Diffusion & Thin Films Symbol Starting Material p<100> ρN-well(f) Well(field)Sheet Resistance ρN+ N+ Sheet Resistance N+ Junction Depth xjN+ ρP+ P+ Sheet Resistance P+ Junction Depth xjP+ Base Resistance RSHB_RB High-Voltage Gate Oxide HTGOX Gate Oxide Thickness TGOX Interpoly Oxide Thickness IPOX ρPOLY1 Gate Poly Sheet Resistance Poly2 Resistivity RSH_PL P ρM1 Metal-1 Sheet Resistance ρM2 Metal-2 Sheet Resistance Passivation Thickness TPASS Minimum Typical Maximum Unit 1.5 20.0 2.1 35.0 0.4 75.0 0.4 1.66 22 22 42 22.0 2 45.0 25.0 200+900 2.7 50.0 KΩ/o Ω/o µm Ω/o µm KΩ/sq nm nm nm Ω/o kΩ/o mΩ/o mΩ/o nm 50.0 1.33 33.6 15.0 1.5 35.0 19.0 100.0 2.00 50.4 30.0 2.5 65.0 35.0 Comments n-well oxide+nitride Layout Rules Min Channel Width Min Spacing, Active Region, 5V Poly1 Width/Space Poly2 Width/Space Contact Width/Space Via Width/Space Metal-1 Width/Space Metal-2 Width/Space Gate Poly Width/Space N+/P+ Width/Space 80 C1231 4.0µm 2.0µm 1.4/2.0µm 3.0/2.0µm 1.4x1.4µm 1.4/1.6µm 2.6/1.6µm 2.6/1.6µm 1.5/2.0µm 2.5/2.0µm Diffusion Overlap of Contact Poly Overlap of Contact Metal-1 Overlap of Contact Contact to Poly Space Minimum Pad Opening Metal-1 Overlap of Via Metal-2 Overlap of Via Minimum Pad Opening Minimum Pad to Pad Spacing Minimum Pad Pitch 1.0µm 1.0µm 1.5µm 1.5µm 65x65µm 1.0µm 1.0µm 65x65µm 5.0µm 80µm