® ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50 25 200 0.70 0.90 240 350 Symbol P-Channel High Voltage Transistor Threshold Voltage HVTP HVBVDSSP Punch Through Voltage ON Resistance HVPR0N Capacitance Gate Oxide Metal-1 to Poly1 Metal-2 to Metal-1 © Daily Silver IMP Symbol COX CM1P CMM VDS = 0.1V VGS = 5.0V 100x3.0µm V 1.05 0.95 95.0 1.10 V V1/2 µA/V 2 µm µm V V 100x1.0µm 100x1.0µm 100x100µm 100x1.0µm Per side 8 14 0.85 0.82 87.0 0.90 0.60 13 18 Minimum Typical Maximum Unit Comments –0.8 –25 400 –1.0 –1.2 450 600 V V Ω 0.65 0.75 79.0 0.70 Operating Voltage P-Channel Low Voltage Transistor Threshold Voltage VTP Body Factor γP Conduction Factor βP Effective Channel Length LeffP ∆WP Width Encroachment BVDSSP Punch Through Voltage Poly Field Threshold Voltage VTFP(P) V V Ω VGS = 5V VDS = 20V Operating Voltage N-Channel Low Voltage Transistor Threshold Voltage VTN γN Body Factor Conduction Factor βN Effective Channel Length LeffN ∆WN Width Encroachment Punch Through Voltage BVDSSN Poly Field Threshold Voltage VTFPN T=25oC Unless otherwise noted Maximum Unit Comments –1.25 0.40 24.0 0.72 –8 –14 Minimum VDS = 0.1V VGS = 5.0V 100x3.5µm VGS = –5V VDS = –20V V –1.0 0.50 28.0 0.97 0.60 –12 –18 –0.85 0.60 32.0 1.12 V V1/2 µA/V 2 µm µm V V 100x1.0µm 100x1.0µm 100x100µm 100x1.0µm Per side Typical 1.727 0.046 0.038 Maximum Unit fF/µm2 fF/µm2 fF/µm2 Comments 23 Process C1026 Electrical Characteristics Vertical NPN Transistor Beta Early Voltage Cut-Off Frequency Symbol hFE VAN fτ Minimum 50 30 Typical 100 34 6.2 Maximum 150 Lateral PNP Beta Symbol hFE Schottky Diode Reverse Bias Breakdown Voltage Forware Bias Voltage ON Resistance Symbol Low TCR P-Poly Resistor Resistivity TCR Symbol Minimum 10 Typical 40 Maximum 100 Unit Comments Minimum –18 Typical –20 Maximum Unit V Comments 10x10µm 0.10 0.15 175 0.20 V Ω Typical 230 0 Maximum 290 +50 Minimum 180 –100 Unit Comments 4.5x4.5mm GHz 10x10µm Unit Ω/o ppm/˚C Comments Unit Ω-cm KΩ/o Ω/o µm Ω/o µm nm nm Comments Physical Characteristics Diffusion & Thin Films Symbol Starting Material p<100> Well (field) Sheet Resistance ρN-well(f) ρN+ N+ Sheet Resistance N+ Junction Depth xjN+ ρP+ P+ Sheet Resistance P+ Junction Depth xjP+ High-Voltage Gate Oxide Th HTGOX Gate Oxide Thickness TGOX Interpoly Oxide Thickness IρOX ρPOLY1 Gate Poly Sheet Resistance ρM1 Metal-1 Sheet Resistance ρM2 Metal-2 Sheet Resistance Passivation Thickness TPASS Minimum 25 0.65 22.0 40.0 23.0 35.0 19.0 Typical 0.80 37.0 0.45 57.0 0.50 20 20 47 38.0 45.0 25.0 200+900 Maximum 50 1.10 50.0 80.0 53.0 65.0 35.0 Ω/o mΩ/o mΩ/o nm n-well oxide+nit. Layout Rules Min Channel Width Min spacing, active region, 5V Min spacing, active region, 12V Poly1 (Gate) Width/Space Poly2 Width/Space Contact Width/Space Metal-1 Width/Space Metal-2 Width/Space Via Width/Space 24 C1026 2.0µm 1.2µm 2.0µm 1.0/1.4µm 1.6/2.0µm 1.2x1.2µm 1.4/1.2µm 1.8/1.4µm 1.2/1.8µm Contact to Poly Space Contact Overlap of Diffusion Contact Overlap of Poly Metal-1 Overlap of Contact Metal-1 Overlap of Via Minimum Pad Opening Minimum Pad to Pad Spacing Minimum Pad Pitch 1.0µm 1.0µm 0.8µm 0.8µm 0.8µm 65x65µm 5.0µm 80µm