BSM 35 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 35 GD 120 DN2 BSM35GD120DN2E3224 IC Package Ordering Code 1200V 50A ECONOPACK 2 C67076-A2506-A67 1200V 50A ECONOPACK 2K C67070-A2506-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 50 TC = 80 °C 35 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 100 TC = 80 °C 70 Power dissipation per IGBT W Ptot TC = 25 °C 280 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.44 Diode thermal resistance, chip case RthJCD ≤ 0.8 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 + 150 °C -40 ... + 125 K/W sec 40 / 125 / 56 Oct-20-1997 BSM 35 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 1.2 mA 4.5 5.5 6.5 VGE = 15 V, IC = 35 A, Tj = 25 °C - 2.7 3.2 VGE = 15 V, IC = 35 A, Tj = 125 °C - 3.3 3.9 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 0.6 1 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 2.4 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 150 AC Characteristics Transconductance VCE = 20 V, IC = 35 A Input capacitance 11 nF - 2 - - 0.3 - - 0.14 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-20-1997 BSM 35 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Ω Rise time - 60 120 - 60 120 - 400 600 - 50 75 tr VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39 Ω Free-Wheel Diode Diode forward voltage V VF IF = 35 A, VGE = 0 V, Tj = 25 °C - 2.3 2.9 IF = 35 A, VGE = 0 V, Tj = 125 °C - 1.9 - Reverse recovery time µs trr IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge - 0.25 µC Qrr IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - 2 - Tj = 125 °C - 5 - 3 Oct-20-1997 BSM 35 GD 120 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 300 W A 260 Ptot 240 IC 220 t = 18.0µs p 10 2 200 180 100 µs 160 10 1 140 120 1 ms 100 10 0 80 10 ms 60 40 DC 20 0 0 20 40 60 80 100 120 °C 10 160 -1 10 0 10 1 10 2 10 3 TC Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 55 A IC V VCE K/W 45 ZthJC 40 10 -1 35 30 10 -2 D = 0.50 25 0.20 20 0.10 15 10 -3 0.05 single pulse 0.02 10 0.01 5 0 0 20 40 60 80 100 120 °C 160 TC 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-20-1997 BSM 35 GD 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 70 70 A A 60 IC 55 50 45 60 17V 15V 13V 11V 9V 7V IC 55 50 45 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 0 5 0 0 1 2 3 V 5 0 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 70 A 60 IC 55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE 5 Oct-20-1997 BSM 35 GD 120 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 35 A Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C 14 600 V 800 V Ciss 10 0 12 10 Coss 8 Crss 10 -1 6 4 2 0 0 40 80 120 160 nC 10 -2 0 220 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC 10 µs, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 0.0 0 2 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-20-1997 BSM 35 GD 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 39 par.: VCE = 600 V, VGE = ± 15 V, IC = 35 A 10 3 t 10 3 tdoff t ns tdoff ns tdon tr 10 2 10 tr tdon 2 tf 10 1 0 10 20 30 40 50 60 A IC tf 10 1 0 80 20 40 60 80 100 120 140 180 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 39 par.: VCE = 600V, VGE = ± 15 V, IC = 35 A 20 20 mWs E mWs Eon 16 E 16 14 14 12 12 10 10 Eon 8 8 Eoff 6 6 4 4 2 2 0 0 10 20 30 40 50 60 A IC 80 0 0 Eoff 20 40 60 80 100 120 140 180 RG 7 Oct-20-1997 BSM 35 GD 120 DN2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj Diode 10 0 70 A K/W 60 IF 55 ZthJC 50 10 -1 45 40 Tj=125°C Tj=25°C 35 D = 0.50 30 0.20 25 10 -2 0.10 0.05 20 15 0.02 single pulse 0.01 10 5 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-20-1997 BSM 35 GD 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g 9 Oct-20-1997 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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