BUP 200 D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type VCE IC BUP 200 D 1200V 3.6A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67040-A4420-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 3.6 TC = 90 °C 2.4 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 7.2 TC = 90 °C 4.8 IF Diode forward current TC = 90 °C 8 Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C 48 Ptot Power dissipation TC = 25 °C W 50 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group Unit 1 °C Dec-06-1995 BUP 200 D Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values E Unit - 55 / 150 / 56 Thermal Resistance IGBT thermal resistance, chip case RthJC 3.1 Diode thermal resistance, chip case RthJCD 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.1 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 1.5 A, Tj = 25 °C - 2.8 3.3 VGE = 15 V, IC = 1.5 A, Tj = 125 °C - 3.8 4.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current mA - - 0.275 IGES VGE = 20 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 1.5 A Input capacitance - pF - 225 320 - 25 40 - 13 24 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance 0.6 Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Dec-06-1995 BUP 200 D Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 1.5 A RGon = 100 Ω Rise time - 30 50 tr nS VCC = 600 V, VGE = 15 V, IC = 1.5 A RGon = 100 Ω Turn-off delay time - 20 30 td(off) ns VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100 Ω Fall time - 170 250 - 15 25 tf VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100 Ω Total turn-off loss energy Eoff mWs VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100 Ω - 0.25 - Free-Wheel Diode Diode forward voltage VF V IF = 4 A, VGE = 0 V, Tj = 25 °C - 2.3 3 IF = 4 A, VGE = 0 V, Tj = 125 °C - 1.9 - Reverse recovery time trr ns IF = 4 A, VR = -300 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - - - Tj = 125 °C - 60 100 Reverse recovery charge Qrr µC IF = 4 A, VR = -300 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - - - Tj = 125 °C - 1 1.8 Semiconductor Group 3 Dec-06-1995 BUP 200 D Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 55 3.6 W Ptot A 45 IC 2.8 40 2.4 35 30 2.0 25 1.6 20 1.2 15 0.8 10 0.4 5 0 0 0.0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 1 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 1 t = 4.5µs p 10 µs A K/W IC ZthJC 100 µs 10 0 10 0 1 ms D = 0.50 0.20 10 ms 10 -1 10 -1 0.10 0.05 0.02 DC 10 -2 0 10 10 1 10 2 10 single pulse 3 10 -2 -5 10 V VCE Semiconductor Group 10 -4 0.01 10 -3 10 -2 10 -1 s 10 0 tp 4 Dec-06-1995 BUP 200 D Typ. output characteristics Typ. transfer characteristics IC = f(VCE) IC = f (VGE) parameter: tp = 80 µs, Tj = 125 °C parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) VCE(sat) = f (VGE) parameter: Tj = 25 °C parameter: Tj = 125 °C Semiconductor Group 5 Dec-06-1995 BUP 200 D Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 1 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 20 V VGE 16 14 400 V 800 V 12 10 8 6 4 2 0 0 4 8 12 16 20 24 32 Q Gate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 2.5 ICsc /IC(90°C) I Cpuls/I C 6 1.5 4 1.0 2 0.5 0 0.0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 6 0 200 400 600 800 1000 1200 V 1600 Dec-06-1995 BUP 200 D Forward characteristics of fast recovery Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T reverse diode IF = f (VF) parameter: Tj Diode 10 1 4.5 A K/W IF ZthJC 3.5 10 0 3.0 2.5 Tj=125°C Tj=25°C D = 0.50 2.0 0.20 10 -1 1.5 0.10 0.05 0.02 1.0 single pulse 0.01 0.5 0.0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF Semiconductor Group 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 7 Dec-06-1995 BUP 200 D Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Dec-06-1995