LEADLESS CHIP SIGNAL DIODE High Speed Switching Data Sheet CD4148 Mechanical Dimensions Features n INDUSTRY STANDARD 1206 PACKAGE/FOOTPRINT n DUAL SIDE MOUNTING n INTERNAL SOLDER CONSTRUCTION NO INTERMITTENT CONTACTS n ELECTRICALLY IDENTICAL TO JEDEC 1N4148 n 350 mW POWER DISSIPATION Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) CD4148 Units CD4148 100 75 Volts Volts Peak Forward Current...IF ............................................. 200 ............................................... mAmps Peak Forward Surge Current...IFSM ............................................. 2000 ............................................... mAmps ............................................. 350 ............................................... mW °C ............................................. 175 ............................................... ..................................... -55 to 150 ...................................... °C Power Dissipation...PD Operating Temperature...TJ Storage Temperature Range...TSTRG Electrical Characteristics Maximum Forward Voltage...VF @ IF = 10 mA Maximum DC Reverse Current...IR @ VR = 75v Maximum Diode Capacitance...CD Maximum Reverse Recovery Time...TRR ............................................. 1.0 ............................................... Volts ............................................. 5.0 ............................................... µAmps pF ns ............................................. 4 ............................................... ............................................. 4 ............................................... .01 uF PVV = 100nS Device Under TTest est 50 Ohms RG = 50 Ohms Page 10-16 Trr IF 5K Ohms Output IR 0.1 IR LEADLESS CHIP SIGNAL DIODE High Speed Switching Data Sheet Forward Characteristics Dynamic forward resistance versus forward current 1000 CD4148 10000 100 1000 r d (Ω ) IF 10 1 100 0.1 10 0.01 0 1 1 0.01 2 VF 1 IF (mA) 10 100 Relative capacitance versus reverse voltage Admissable power dissipation versus ambient temperature Valid provided that leads at a distance of 8mm from case are kept at ambient temperature 1.1 800 700 600 500 400 300 200 100 0 Ctot(VR)/Ctot(0V) Ptot (mW) 0.1 Tj = 25C f = 1MHz 1 0.9 0.8 0.7 0 0 50 100 150 2 200 4 6 8 10 VR (V) o T amb ( C) Leakage current versus junction temperature Admissable repetitive peak forward current versus pulse duration 10000 Valid provided that leads at a distance of 8mm from case are kept at ambient temperature 100 IFRM (A) IR (nA) 1000 100 10 Ratings at 25 Deg. C ambient temperature unless otherwise specified. 1 10 0.1 0.00001 0.0001 0.001 0.01 tp (s) 1 0 100 o Tj ( C) 200 0.1 1 10 Single Phase Half Wave, 60 Hz Resistive or Inductive Load. For Capacitive Load, Derate Current by 20%. Page 10-17