CHA2092b 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC ground. This helps simplify the assembly process. Self biasing technique is implemented on chip to ease the circuit biasing. Vds IN OUT 8831 The circuit is manufactured with a P-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Gain & NF ( dB ) Vgs1 Main Features ■ Broadband performances : 18-32GHz ■ 2.5dB Noise Figure ■ 10dBm output power ( -1dB gain comp. ) ■ 22dB ±1.0dB gain ■ Low DC power consumption, 60mA @ 3.5V ■ Chip size : 1.67 X 0.97 X 0.10 mm Vgs2,3 30 25 20 15 10 5 0 15 17 19 21 23 25 27 29 31 33 35 Frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Fop Parameter Min Operating frequency range 18 G Small signal gain 17 NF Noise figure (20-32GHz) P1dB Id Typ 8 Bias current Unit 32 GHz 22 2.5 Output power at 1dB gain compression Max dB 3.5 10 60 dB dBm 100 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA20921233 21-August-01 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 18-32GHz Low Noise Amplifier CHA2092b Electrical Characteristics Tamb = +25°C, Vds = 3.5V; Ids=60mA Symbol Fop G ∆G Parameter Min Operating frequency range (1) 20 Small signal gain (1) 18 P1dB VSWRin 28 18 17 Typ Max Unit 32 GHz 22 dB ±2.5 dB 0.5 0.5 25 30 25 30 dB Output power at 1dB gain compression (3) 8 10 8 10 dBm Input VSWR (1) NF Noise figure (2) Vd DC Voltage 18-20GHz 20-28GHz 28-32GHz Vd Vgs1,Vgs2&3 Bias current (2) 2.5:1 3.0:1 2.5:1 3.5:1 2.5:1 3.0:1 2.5:1 3.5:1 2.5 3.5 2.5 2.5 2.5 4 3.5 3.5 3.5 -0.5 4.5 3.5 -0.5 4.5 V V 60 100 60 100 mA (1)These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (2) 60 mA is the typical bias current used for on wafer measurements, with Vgs1 and Vgs2&3 connected together. For optimum noise figure, the bias current could be reduced down to 50 mA, adjusting the Vgs1 voltage. (3) Ids=90mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 5.0 V Id Drain bias current 120 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +155 °C Tstg dBpp Reverse isolation (1) VSWRout Output VSWR (1) Id Min 22 Gain flatness over 40MHz Is Max ±1.5 Small signal gain flatness (1) ∆Gsb Typ (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA20921233 21-August-01 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice dB 18-32GHz Low Noise Amplifier CHA2092b Typical Results 25,00 10,00 24,00 9,00 23,00 8,00 22,00 7,00 21,00 6,00 20,00 5,00 19,00 4,00 18,00 3,00 17,00 2,00 16,00 1,00 15,00 17,00 19,00 21,00 23,00 25,00 27,00 29,00 31,00 33,00 NF (dB) Gain (dB) Tamb=25°C DBS21 NF 0,00 35,00 Frequency (GHz) Gain and NF vs Frequency (Vdd=3.5V; Ids=60mA) 25 20 Vgs1=-0.36V Gain (dB) Vgs1=-0.5V 15 Vgs1=-0.6V Vgs1=-0,7V Vgs1=-0,8V Vgs1=-0,9V 10 Vgs1=-1V 5 0 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Gain vs Frequency and Vgs1 (Vdd=3.5V; Vgs23=-0.3V) 25 20 Vgs=-0,7V 15 Gain (dB) Vgs=-0.6V Vgs=-0.5V Vgs=-0.4V Vgs=-0.3V 10 5 0 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Ref. : DSCHA20921233 21-August-01 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18-32GHz Low Noise Amplifier CHA2092b Gain vs Frequency and Vgs123 (Vdd=3.5V) 0 -2 -4 -0,36 -0,50 dBS11 (dB) -6 -0,60 -0,70 -8 -0,80 -0,90 -10 -1,00 -12 -14 -16 20,00 21,00 22,00 23,00 24,00 25,00 26,00 27,00 28,00 29,00 30,00 Frequency (GHz) dBS11 vs Frequency and Vgs1 (Vdd=3.5V; Vgs23=-0.3V) 120,0 100,0 Ids (mA) 80,0 60,0 40,0 20,0 -0,70 -0,65 -0,60 -0,55 -0,50 -0,45 -0,40 -0,35 -0,30 Vgs123 (V) Ids vs Vgs123 (Vdd=3.5V) Ref. : DSCHA20921233 21-August-01 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18-32GHz Low Noise Amplifier CHA2092b Chip Assembly and Mechanical Data 100pF To Vdd DC Drain supply feed IN OUT 8831 100pF 100pF To Vgs DC Gate supply feed. To Vgs DC Gate supply feed to ajust NF. Note : Supply feed should be capacitively bypassed. 1670 +/- 10 1005 970 +/- 10 8831 385 385 325 920 Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA20921233 21-August-01 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18-32GHz Low Noise Amplifier CHA2092b Typical Bias Tuning The circuit schematic is given below : Vd 1,2,3 OUT IN Vg 1 Vg 2,3 The three drain biases are connected altogether on chip. For typical operation, all the gate biases are connected together at the same power supply, tuned to drive a small signal operating current of 60 mA. A separate access to the gate voltages of the first stage ( Vg1 ) and the second and third stages ( Vgs2,3 ) is provided for the fine tuning of the amplifier regarding the application. Ordering Information Chip form : CHA2092b99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20921233 21-August-01 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice