CM100TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 100 Amperes/600 Volts J S - NUTS (5 TYP) T (4 TYP.) K K R CM P N P GUP EUP GVP EVP L L N GWP EWP N L B E Q M GUN EUN TC MEASURING POINT GVN EVN U L TC MEASURING POINT W V J GWN EWN Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. J N L N L V D A W - THICK x X - WIDE TAB (12 PLACES) H C G F P RTC RTC RTC EWP EVP EUP GWN GVN RTC RTC RTC EWN EVN EUN N A W V U GUN Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking GWP GVP GUP Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.02 102.0 M 0.47 11.85 3.58 91.0 N 0.75 19.1 P 0.74 18.7 39.3 B C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 D 3.15±0.01 80.0±0.25 Q 1.55 E 2.91±0.01 74.0±0.25 R 0.05 Millimeters 1.25 F 0.16 4.0 S M4 G 1.02 26.0 T 0.22 Dia. H 0.31 8.1 U J 0.79 20.0 V K 0.39 10.0 W 0.02 0.5 L 0.43 11.0 X 0.110 2.79 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100TU-12F is a 600V (VCES), 100 Ampere SixIGBT IGBTMOD™ Power Module. M4 5.5 Dia. Type Current Rating Amperes VCES Volts (x 50) 0.02 0.5 CM 100 12 0.12 3.05 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TU-12F Trench Gate Design Six IGBTMOD™ 100 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM100TU-12F Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 100 Amperes ICM 200* Amperes IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 350 Watts Mounting Torque, M4 Main Terminal – 15 in-lb Mounting Torque, M5 Mounting – 31 in-lb – 570 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions ICES VCE = VCES, VGE = 0V Min. Typ. Max. – – 1 mA I GES VGE = VGES, VCE = 0V – – 20 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 100A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts IC = 100A, VGE = 15V, Tj = 125°C – 1.6 – Volts Total Gate Charge QG VCC = 300V, IC = 100A, VGE = 15V – 620 Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Units – 2.6 nC Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TU-12F Trench Gate Design Six IGBTMOD™ 100 Amperes/600 Volts Dynamic Electrical Characteristics, Tj = 2 5 °C unless othe rwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VCE = 10V, VGE = 0V Min. Typ. – – – – Max. 27 Units nf 1.8 nf Reverse Transfer Capacitance Cres – – 1 nf Inductive Turn-on Delay Time td(on) VCC = 300V, IC = 100A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 80 ns Switch Turn-off Delay Time td(off) RG = 6.3⍀, – – 300 ns Times Fall Time tf Inductive Load – – 250 ns Diode Reverse Recovery Time** trr Switching Operation – – 150 ns Diode Reverse Recovery Charge** Qrr IE = 100A – 1.9 – µC Thermal and Mechanical Characteristics, Tj = 2 5 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Test Conditions Per IGBT 1/6 Module, Tc Reference Min. Typ. – Max. Units 0.35 °C/W 0.70 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/6 Module, Tc Reference – – – 0.23 – 0.018 Point per Outline drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/6 Module, °C/W Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TU-12F Trench Gate Design Six IGBTMOD™ 100 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 9.5 15 160 VGE = 20V 9 120 8.5 80 40 5 2.5 10 11 8 7.5 0 VGE = 15V Tj = 25°C Tj = 125°C 2.0 1.5 1.0 0.5 1 2 3 4 0 3 IC = 200A 2 IC = 100A IC = 40A 1 40 80 120 160 0 200 4 8 12 16 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 100 0 .5 1.0 1.5 2.0 2.5 100 Coes 100 101 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE Irr 101 101 VCC = 300V VGE = ±15V RG = 6.3 Ω Tj = 25°C Inductive Load 100 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) trr REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 td(on) 101 tr IC = 100A 16 VCC = 200V VCC = 300V 12 100 100 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 102 102 VCC = 300V VGE = ±15V td(off) RG = 6.3 Ω tf Tj = 125°C Inductive Load Cres 10-1 10-1 3.0 SWITCHING TIME, (ns) 101 Cies 101 8 4 101 102 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CAPACITANCE, Cies, Coes, Cres, (nF) 102 20 103 VGE = 0V Tj = 25°C EMITTER CURRENT, IE, (AMPERES) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 REVERSE RECOVERY TIME, trr, (ns) Tj = 25°C 0 0 0 4 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 100 10-3 10-2 10-1 100 Per Unit Base Rth(j-c) = 0.35°C/W (IGBT) Rth(j-c) = 0.7°C/W (FWDi) Single Pulse TC = 25°C 10-1 10-1 10-2 10-2 10-3 0 0 300 600 GATE CHARGE, QG, (nC) 900 101 10-5 TIME, (s) 10-4 10-3 10-3