CMF02 TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF02 Switching Mode Power Supply Applications DC/DC Converter Applications Repetitive peak reverse voltage: VRRM = 600 V Average forward current: IF (AV) = 1.0 A Forward voltage: VFM = 2.0 V (max) Very fast reverse-recovery time: trr = 100 ns (max) • Suitable for high-density board assembly due to the use of a small surface-mount package, M−FLATTM 4.7 ± 0.2 3.8 ± 0.1 ② Absolute Maximum Ratings (Ta = 25°C) ① Rating Unit Repetitive peak reverse voltage VRRM 600 V Average forward current IF(AV) 1.0 (Note 1) A Peak one-cycle surge forward current (non-repetitive) IFSM 10 (50 Hz) A Tj −40 to 150 °C Tstg −40 to 150 °C Junction temperature Storage temperature range Note 1: Tℓ = 108°C Rectangular waveform (α = 180°) + 0.2 2.4 − 0.1 0.98 ± 0.1 Symbol 1.75 ± 0.1 0 ~ 0.1 Characteristic 0.16 0.65 ± 0.2 • • • • 0.65 ± 0.2 Unit: mm ① ANODE ② CATHODE JEDEC ⎯ JEITA ⎯ TOSHIBA 3-4E1A Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.023 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2008-05-13 CMF02 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Peak forward voltage VFM IFM = 1.0 A (pulse test) ⎯ ⎯ 2.0 V Repetitive peak reverse current IRRM VRRM = 600 V (pulse test) ⎯ ⎯ 50 μA Reverse recovery time trr IF = 1 A, di/dt =-30 A/μs ⎯ ⎯ 100 ns Forward recovery time tfr IF = 1 A ⎯ 270 ⎯ ns Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) (board thickness: 0.64 mm) ⎯ ⎯ 60 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) (board thickness: 1.6 mm) ⎯ ⎯ 135 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 2.1 mm × 1.4 mm) (board thickness: 1.6 mm) ⎯ ⎯ 210 ⎯ ⎯ 16 Thermal resistance Rth(j-a) Thermal resistance (junction to lead) ⎯ Rth(j-ℓ) Marking °C/W °C/W Standard Soldering Pad Part No. F2 CMF02 Unit: mm 2.1 Abbreviation Code 1.4 3.0 1.4 Handling Precautions The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. The following are the general derating methods we recommend for designing a circuit using this device. VRRM: We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the absolute maximum rating of VRRM for a DC circuit and be no greater than 50% of that of VRRM for an AC circuit. VRRM has a temperature coefficient of 0.1%/℃. Take this temperature coefficient into account designing a device at low temperature. IF(AV): We recommend that the worst-case current be no greater than 80% of the absolute maximum rating of IF(AV). Carry out adequate heat design. If you can’t design a circuit with excellent heat radiation, set the margin by using an allowable Ta max- IF(AV) curve. This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180. Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. We recommend that a device be used at Tj below 120℃ under the worst load and heat radiation conditions. Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Refer to the Rectifier databook for further information. 2 2008-05-13 CMF02 iF – vF PF (AV) – IF (AV) 3.0 Pulse test Average forward power dissipation PF (AV) (W) Instantaneous forward current iF (A) 10 Tj = 150°C 1 75°C 25°C 0.1 180° 120° 2.0 α = 60° Rectangular waveform 1.0 0° α 360° Conduction angle α 0.01 0 1.0 2.0 3.0 4.0 Instantaneous forward voltage VF 0 0 5.0 0.2 0.4 0.6 Average forward current (V) 0.8 1.0 IF (AV) (A) 1.2 Ta max – IF (AV) 140 120 100 80 Rectangular waveform 60 120° 40 0° α 360° 20 0 0 α = 60° 0.4 0.2 Conduction angle: α 180° 0.6 Average forward current 0.8 1.0 IF (AV) (A) Tℓ max – IF (AV) 160 Maximum allowable lead temperature Tℓ max (°C) Maximum allowable ambient temperature Ta max (°C) 160 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm, land size: 6 mm × 6 mm) 140 120 100 80 40 0° α 360° 20 0 1.2 Rectangular waveform 60 α = 60° Conduction angle: α 0 0.2 0.4 0.6 Average forward current 120° 180° 0.8 1.0 IF (AV) (A) 1.2 Surge forward current rth (j-a) – t (non-repetitive) 1000 8 6 4 2 0 1 3 5 10 30 50 rth (j-a) 10 (°C/W) Ta = 25°C f = 50 Hz Transient thermal impedance Peak surge forward current IFSM (A) 12 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm, land size: 2.1 mm × 1.4 mm, board thickness: 1.6 mm) 100 10 Device mounted on a ceramic board (board size: 50 mm × 50 mm, land size: 2 mm × 2 mm, board thickness: 0.64 mm) 1 0.001 100 Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm, land size: 6 mm × 6 mm, board thickness: 1.6 mm) 0.01 0.1 1 Time Number of cycles 3 10 t 100 1000 (s) 2008-05-13 CMF02 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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