CMT20N15 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed to withstand high energy ! Robust High Voltage Termination in avalanche and commutation modes. The new energy ! Avalanche Energy Specified efficient design also offers a drain-to-source diode with a ! Source-to-Drain Diode Recovery Time Comparable to a fast recovery time. Designed for high voltage, high speed Discrete Fast Recovery Diode switching applications in power supplies, converters and ! Diode is Characterized for Use in Bridge Circuits PWM motor controls, these devices are particularly well ! IDSS and VDS(on) Specified at Elevated Temperature suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL TO-220 D SO URCE DRAIN G ATE Front View G S 1 2 N-Channel MOSFET 3 ORDERING INFORMATION Part Number Package CMT20N15N220 TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Symbol Value Unit A ID 20 IDM 60 VGS ±20 V VGSM ±32 V PD 112 W 0.9 W/℃ TJ, TSTG -55 to 150 ℃ EAS 60 mJ θJC 1.1 ℃/W θJA 62.5 TL 260 Derate above 25℃ Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 20A, L = 10mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 2001/12/24 Preliminary Rev. 1 Champion Microelectronic Corporation ℃ Page 1 CMT20N15 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT20N15 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Symbol Min V(BR)DSS 150 Typ Max Units V Drain-Source Leakage Current (VDS = 150 V, VGS = 0 V) (VDS = 150 V, VGS = 0 V, TJ = 125℃) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) * RDS(on) 0.13 Ω Drain-Source On-Voltage (VGS = 10 V) (ID = 10.0 A) VDS(on) 2.8 V Forward Transconductance (VDS = 13 V, ID = 10A) * Input Capacitance gFS (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (VDD = 75 V, ID = 20 A, VGS = 10 V, RG = 9.1Ω) * Rise Time Turn-Off Delay Time Fall Time Total Gate Charge μA 10 100 2.0 0.12 8.0 11 mhos Ciss 1133 1627 Coss 332 474 pF pF Crss 105 174 pF td(on) 11 25 tr 77 153 ns ns td(off) 33 67 ns tf 49 97 ns Qg 39.1 55.9 Qgs 7.5 nC nC Qgd 22 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Gate-Source Charge Gate-Drain Charge (VDS = 120 V, ID = 20 A, VGS = 10 V)* SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 20 A, VGS = 0 V, dIS/dt = 100A/µs) VSD 1.5 V ton ** ns trr 160 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2001/12/24 Preliminary Rev. 1 Champion Microelectronic Corporation Page 2 CMT20N15 POWER MOSFET PACKAGE DIMENSION TO-220 C B S F A U T Q PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE A B 1 2 3 C D F Z G H H J K L N Q R S T U R G L D V Z J V N 2001/12/24 Preliminary Rev. 1 Champion Microelectronic Corporation Page 3 CERAMIC/SURGE ABSORBER SHANGHAI,CHINA DIODES LAB HANGZHOU,CHINA CERAMIC/PZT SHINCHU,TAIWAN DC POWER LAB TAIPEI,TAIWAN