Reflective Photosensors (Photo Reflectors) CNB1001, CNB1002 Reflective Photosensors Unit : mm 3.4 1.8 Overview CNB1001 and CNB1002 are a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package. 1 3 C0.5 4.3±0.3 2.7 0.35 Chip center 2 4-0.7 Features 0.15 0.05+0.1 –0.05 4 4-0.5 0.85 1.5 Reflow-compatible reflective photosensor Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used CNB1001 ,, ,, ,, Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation 6 V IF 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage VCEO 35 V VECO 6 V Collector power dissipation PC *2 75 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C Temperature 1 2 3 4 Pin connection 1: Anode 3: Emitter 2: Cathode 4: Collector Unit VR Collector current CNB1002 3 4 1 2 Pin connection 1: Emitter 3: Anode 2: Collector 4: Cathode (Note) Tolerance unless otherwise specified is ±0.2 *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min Forward voltage (DC) Input characteristics Reverse current (DC) VF IF = 20mA IR VR = 3V Output characteristics Collector cutoff current ICEO VCE = 20V IC*1 VCC = 2V, IF = 4mA. RL = 100Ω, d = 1mm Collector current Leakage current ID Transfer Collector to emitter saturation voltage VCE(sat) characteristics tr*2 Response time tf*2 *1 Output Current (IC) measurement method (see figure below.) *2 Sig.IN 50Ω 1.4 V 10 µA nA VCC = 2V, IF = 4mA, RL = 100Ω 100 nA IF = 20mA, IC = 0.1mA 0.4 V 23 VCC = 5V, IC = 0.1mA, 30 RL = 1000Ω 40 Sig. Sig.OUT OUT V CC µs Color indication of classifications tr : Rise time Glass plate tf : Fall time Evaporated Al d = 1mm Sig.IN RL 1.2 µA ,, ,,,, IC VCC ,,, RL Unit 100 , ,,, ,,, , , ,,, ,,, ,,,, IF max 160 Response time measurement circuit (see figure below.) Glass plate Evaporated Al d = 1mm typ tr tf 90% 10% Class IC (µA) Color Q 23 to 50 Orange R 41 to 90 White S 74 to 160 Light blue Input and output are handled electrically. This product is not designed to withstand radiation. 1 CNB1001,CNB1002 Reflective Photosensors (Photo Reflectors) IF , IC — Ta IF — VF IC — IF 60 800 Ta = 25˚C IF 30 IC 10 0 – 25 IC (µA) 40 Collector current 40 20 VCC = 5V Ta = 25˚C RL = 100Ω d = 1mm 50 IF (mA) 50 Forward current Forward current, collector current IF , IC (mA) 60 30 20 600 400 200 10 0 20 40 60 80 0 100 0 0.4 Ambient temperature Ta (˚C ) 0.8 1.2 1.6 2.0 0 2.4 0 Forward voltage VF (V) VF — Ta 8 IC — VCE 1.6 16 IC — Ta 600 160 d = 1mm Ta = 25˚C 1mA 0.8 0.4 IC (%) IF = 20mA VCC = 2V IF = 4mA RL = 100Ω 120 400 Relative output current 10mA IC (µA) 1.2 500 Collector current Forward voltage VF (V) IF = 50mA 24 Forward current IF (mA) 15mA 300 10mA 200 8mA 6mA 100 80 40 4mA 0 20 40 60 80 0 100 Ambient temperature Ta (˚C ) 2mA 0 1 2 3 4 5 6 ICEO — Ta tr , tf — IC 10 –3 10 –4 – 40 – 20 0 20 40 60 80 Ambient temperature Ta (˚C ) 100 60 80 100 VCE = 2V Ta = 25˚C IF = 4mA VCC = 5V Ta = 25˚C : tr : tf 10 2 RL = 2kΩ 1kΩ 10 100Ω 1 10–1 10 –2 40 IC — d 10 –1 1 Collector current IC (mA) 10 IC (%) 10 –2 20 100 80 Relative output current tr , tf (µs) 10 –1 Rise time , fall time ICEO (µA) 1 0 Ambient temperature Ta (˚C ) 10 3 VCE = 10V Dark current 0 – 40 – 20 8 Collector to emitter voltage VCE (V) 10 2 7 60 , , 0 – 40 – 20 d 40 20 0 0 2 4 6 Distance d (mm) 8 10