Preliminary Datasheet CR12CM-12B R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT (AV) : 12 A • VDRM : 600 V • IGT : 30 mA • The product guaranteed maximum junction temperature of 150°C • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) RENESAS Package code: PRSS0004AA-A A (Package name: TO-220) 4 4 2, 4 3 1 2 12 3 1 1. 2. 3. 4. Cathode Anode Gate Anode 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Page 1 of 8 CR12CM-12B Preliminary Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) Ratings 18.8 12 Unit A A ITSM 360 A I2t 544 A2 s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 5 0.5 6 10 2 – 40 to +150 – 40 to +150 2.1 W W V V A °C °C g Conditions Commercial frequency, sine half wave Note2 180° conduction, Tc = 116°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 2.0/5.0 Unit mA Test conditions Tj = 125°C/150°C, VRRM applied Repetitive peak off-state current On-state voltage IDRM VTM — — — — 2.0/5.0 1.6 mA V Tj = 125°C/150°C, VDRM applied Gate trigger voltage Gate non-trigger voltage VGT — — 1.5 V VGD 0.2/0.1 — — V IGT IH Rth (j-c) — — — — 15 — 30 — 1.2 mA mA °C/W Gate trigger current Holding current Thermal resistance Tc = 25°C, ITM = 40 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Tj = 125°C/150°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 Note2 Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. 2. Case temperature is measured at anode tab 1.5 mm away from the molded case. R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 Page 2 of 8 CR12CM-12B Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 103 400 Surge On-State Current (A) 102 101 1.2 1.6 2.0 2.4 2.8 Gate Voltage (V) 101 102 × 100 (%) Gate Trigger Current vs. Junction Temperature PGM = 5 W VFGM = 6 V PG(AV) = 0.5 W IFGM =2A IGT = 30 mA VGD = 0.1 V 10–2 101 Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) × 100 (%) 80 Gate Characteristics 10–1 102 103 104 103 Typical Example 102 101 100 –40 0 40 80 160 120 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 100 –40 160 Conduction Time (Cycles at 60Hz) VGT = 1.5 V 100 240 On-State Voltage (V) 102 101 320 0 100 3.2 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 0.8 0 40 80 120 Junction Temperature (°C) R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tc = 25°C 101 100 10-1 10-2 10-4 10-3 10-2 10-1 Time (s) Page 3 of 8 CR12CM-12B Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 56 θ 48 360° 120° 90° Resistive, 40 inductive loads Case Temperature (°C) Average Power Dissipation (W) 64 180° 60° 32 24 θ = 30° 16 0 4 8 12 16 20 24 28 60 60° 120° 40 θ = 30° 0 3 90° 180° 6 9 12 15 18 21 24 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Full Wave) 64 Resistive, inductive loads Natural convection 120 Average Power Dissipation (W) Ambient Temperature (°C) 80 Average On-State Current (A) θ 360° 100 80 120° θ = 30° 180° 60° 60 90° 40 20 0 56 120° 180° 48 90° 40 60° 32 θ = 30° 24 16 θ θ 360° 8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Resistive loads 0 4 8 12 16 20 24 28 32 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 140 θ 120 θ 360° Resistive loads 100 80 60 60° 120° 40 θ = 30° 20 0 4 8 90° 180° 12 16 20 24 28 Average On-State Current (A) R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 32 Ambient Temperature (°C) 160 Case Temperature (°C) Resistive, inductive loads 100 Average On-State Current (A) 140 0 360° 0 32 160 0 θ 120 20 6 0 140 Resistive loads Natural convection 140 120 θ θ 360° 100 180° 120° 80 θ = 30° 60 60° 90° 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) Page 4 of 8 CR12CM-12B Preliminary Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) Maximum Average Power Dissipation (Rectangular Wave) 160 56 140 48 Case Temperature (°C) θ 360° 40 Resistive, inductive loads 180° 270° 32 120° 90° DC 60° 24 θ = 30° 16 8 0 4 8 12 20 16 24 28 80 θ = 30° 90° 180° 60 DC 60° 120° 270° 40 0 4 8 12 16 20 24 28 Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) Breakover Voltage vs. Junction Temperature × 100 (%) Average On-State Current (A) Resistive, inductive loads Natural convection 140 θ 360° 120 100 DC 270° 80 θ = 30° 60 180° 60° 90° 40 120° 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Ambient Temperature (°C) × 100 (%) Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) Resistive, inductive loads Average On-State Current (A) 160 0 360° 100 0 32 103 32 Typical Example 102 101 –40 0 40 80 120 160 Average On-State Current (A) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 125°C 140 120 100 80 60 40 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 × 100 (%) 0 θ 120 20 Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) Average Power Dissipation (W) 64 160 Typical Example Tj = 150°C 140 120 100 80 60 40 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Page 5 of 8 Preliminary Holding Current vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 × 100 (%) Repetitive Peak Reverse Voltage vs. Junction Temperature Holding Current (Tj = t°C) Holding Current (Tj = 25°C) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) CR12CM-12B 103 Typical Example 102 101 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 10−1 100 101 102 Gate Current Pulse Width (μs) R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 Page 6 of 8 CR12CM-12B Preliminary Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AG-A Previous Code TO-220ABS MASS[Typ.] 2.1g Unit: mm 4.5 ± 0.2 2.8 ± 0.1 Package Name TO-220AB 9.9 ± 0.2 + 0.10 φ3.6 ± 0.2 13.08 ± 0.20 (3.00) 9.2 ± 0.2 15.7 ± 0.2 1.30 – 0.05 1.62 Max 0.80 ± 0.10 2.6 Max 2.54 2.54 + 0.10 0.50 – 0.05 10.0 ± 0.2 Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code ⎯ MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 2 R07DS0232EJ0300 Rev.3.00 Jul 30, 2013 Page 7 of 8 CR12CM-12B Preliminary Ordering Information Orderable Part Number CR12CM-12B#BB0 CR12CM-12B-A8#BB0 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. 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