RENESAS BCR5LM-12RB

Preliminary Datasheet
BCR5LM-12RB
R07DS0969EJ0100
Rev.1.00
Dec 20, 2012
600V - 5A - Triac
Medium Power Use
Features








IT (RMS) : 5 A
VDRM : 600 V
IFGTI, IRGTI, IRGT: 15 mA
Viso: 1800 V
Insulated Type
Tj: 150 °C
Planar Passivation Type
UL Recognized: File No. E223904
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Electric rice cooker, electric pot, and other heater control
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
Voltage class
12
600
720
Symbol
VDRM
VDSM
Unit
V
V
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
5
A
Commercial frequency, sine full wave
360 conduction, Tc = 122C
Surge on-state current
ITSM
50
A
60 Hz sine wave 1 full cycle,
peak value, non-repetitive
I2 t
10.4
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
3
0.3
10
2
–40 to +150
–40 to +150
1.5
1800
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note4
R07DS0969EJ0100 Rev.1.00
Dec 20, 2012
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute
T1  T2  G terminal to case
Page 1 of 7
BCR5LM-12RB
Preliminary
Electrical Characteristics
Parameter
Symbol
Repetitive peak off-state current
On-state voltage
IDRM
VTM
Min.
—
—
Rated value
Typ.
Max.
—
2.0
—
1.5
Unit
Test conditions
mA
V
Tj = 150C, VDRM applied
Tc = 25C, ITM = 7A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
15
15
15
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
0.2
0.1
—
—
—
—
—
—
4.9
V
V
C/W
Gate non-trigger voltage
Thermal resistance
Notes: 1.
2.
3.
4.
Rth (j-c)
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Gate open.
Measurement using the gate trigger characteristics measurement circuit
The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
R07DS0969EJ0100 Rev.1.00
Dec 20, 2012
Page 2 of 7
BCR5LM-12RB
Preliminary
Main Characteristics
Maximum On-State Characteristics
Rated Surge On-State Current
101
Surge On-State Current (A)
100
Tj = 150°C
100
Tj = 25°C
10−1
0
1
2
3
40
20
101
102
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
101
PGM = 3W
VGT = 1.5V
100
IGM = 2A
IGT = 15mA
PG(AV) = 0.3W
10−1
VGD = 0.1V
101
102
103
104
103
Typical Example
102
IFGT I
IRGT I
IRGT III
101
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
–40
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
60
On-State Voltage (V)
VGM = 10V
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
80
0
100
4
0
40
80
120
Junction Temperature (°C)
R07DS0969EJ0100 Rev.1.00
Dec 20, 2012
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
102
102
6
103
104
100
101
5
4
3
2
1
0
10−1
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR5LM-12RB
Preliminary
Maximum On-State Power Dissipation
102
On-State Power Dissipation (W)
10
101
100 2
10
103
104
360° Conduction
Resistive,
6 inductive loads
4
2
0
2
4
6
10
8
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
140
120 Curves apply
regardlessof
conduction angle
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
1
2
3
4
5
6
7
120 × 120 × t2.3
100 × 100 × t2.3
120
60 × 60 × t2.3
100
All fins are black
80 painted aluminum
60
and greased
Curves apply
40 regardless of
conduction angle
20 Resistive,
inductive loads
0
0
8
1
2
3
4
5
6
7
8
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
R07DS0969EJ0100 Rev.1.00
Dec 20, 2012
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
RMS On-State Current (A)
160
Ambient Temperature (°C)
8
0
105
Ambient Temperature (°C)
Case Temperature (°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
Typical Example
105
104
103
102
–40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 7
BCR5LM-12RB
Preliminary
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
103
Distribution
Typical Example
101
Latching Current (mA)
Holding Current (mA)
102
10
101
T2+, G+
Typical Example
T2–, G–
VD=12V
0
40
80
120
100
–40
160
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
60
40
20
Typical Example
0
–40
0
40
80
120
160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0 1
10
102
103
104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Gate Trigger Current vs.
Gate Current Pulse Width
160
Typical Example
Tj = 150°C
140
120
100
80
III Quadrant
60
40
I Quadrant
20
0 1
10
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
R07DS0969EJ0100 Rev.1.00
Dec 20, 2012
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
100
–40
T2+, G–
Typical Example
Distribution
2
103
Typical Example
IRGT III
IRGT I
102
IFGT I
101
100
101
102
Gate Current Pulse Width (μs)
Page 5 of 7
BCR5LM-12RB
Preliminary
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
Test Procedure II
330Ω
C0
R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0969EJ0100 Rev.1.00
Dec 20, 2012
Page 6 of 7
BCR5LM-12RB
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Ordering Information
Orderable Part Number
BCR5LM-12RB#B00
BCR5LM-12RB-A8#B00
Note:
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS0969EJ0100 Rev.1.00
Dec 20, 2012
Page 7 of 7
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Colophon 2.2