CT60AM-18F Insulated Gate Bipolar Transistor REJ03G1374-0200 (Previous: MEJ02G0023-0101) Rev.2.00 Jul 07, 2006 Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL) 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector 1 1 2 3 3 Applications Microwave oven, Electromagnetic cooking devices, Rice-cookers Maximum Ratings (Tc = 25°C) Parameter Symbol Ratings Unit Collector-emitter voltage Gate-emitter voltage VCES VGES 900 ±25 V V Peak gate-emitter voltage Collector current VGEM IC ±30 60 V A ICM IE PC 120 40 180 A A W Tj Tstg – 40 to +150 – 40 to +150 °C °C Collector current (Pulse) Emitter current Maximum power dissipation Junction temperature Storage temperature Rev.2.00 Jul 07, 2006 page 1 of 5 Conditions VGE = 0 V CT60AM-18F Electrical Characteristics (Tch = 25°C) Parameter Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on Rise time Turn-off delay time Turn-off Fall time Tail loss Symbol ICES IGES VGE (th) VCE (sat) Cies Coes Cres td (on) tr td (off) tf Etail Min. — — 2.0 — — — — — — — — — Typ. — — 4.0 2.1 4400 115 75 0.05 0.1 0.2 0.3 0.6 Max. 1 0.5 6.0 2.7 — — — — — — — 1.0 Unit mA µA V V pF pF pF µs µs µs µs mJ/pls Tail current Itail — 6.0 12 A Emitter-collector voltage Diode reverse recovery time VEC trr — — 2.2 0.5 3.0 2.0 V µs Thermal resistance (IGBT) Thermal resistance (Diode) Rth (j-c) Rth (j-c) — — — — 0.69 4.0 °C/W °C/W Rev.2.00 Jul 07, 2006 page 2 of 5 Test conditions VCE = 900 V, VGE = 0 V VGE = ±20 V, VCE = 0 V VCE = 10 V, IC = 6 mA IC = 60 A, VCE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz VCC = 300 V, IC = 60 A, VGE = 15 V, RG = 10 Ω ICP = 60 A, Tj = 125°C, dv/dt = 200 V/µs IE = 60 A, VGE = 0 V IE = 60 A, diS/dt = –20 A/µs Junction to case Junction to case CT60AM-18F Collector Current vs. Collector-Emitter Voltage (Typical) Tc = 25°C Pulse Test PD = 180W VGE = 20V 120 15V 10V 9V 80 7V 40 0 0 1 2 3 4 Tc = 25°C Pulse Test 4 IC = 120A 3 60A 2 30A 15A 1 0 0 4 8 12 16 20 Collector Current vs. Gate-Emitter Voltage (Typical) Capacitance vs. Collector-Emitter Voltage (Typical) 104 Tc = 25°C VCE = 5V Pulse Test 120 80 40 0 5 Gate-Emitter Voltage VGE (V) Capacitance C (pF) Collector Current IC (A) 5 Collector-Emitter Saturation Voltage vs. Gate-Emitter Voltage (Typical) Collector-Emitter Voltage VCE (V) 160 0 4 8 12 7 5 3 2 Cies 103 7 5 3 2 102 Coes 7 5 Tj = 25°C 3 VGE = 0V 2 f = 1MHz Cres 101 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 16 Gate-Emitter Voltage VGE (V) Collector-Emitter Voltage VCE (V) Switching Characteristics (Typical) Switching Time vs. Gate Resistance (Typical) 103 7 5 Switching Time (ns) 8V 3 td(off) 2 tf Tj = 25°C VCC = 300V VGE = 15V RG = 10Ω 102 tr 7 5 td(on) 3 7 5 3 2 Tj = 25°C VCC = 300V VGE = 15V IC = 60A td(off) 103 7 5 tf 3 2 102 tr 7 5 td(on) 3 2 2 101 0 10 104 Switching Time (ns) Collector Current IC (A) 160 Collector-Emitter Saturation Voltage VCE(sat) (V) Performance Curves 2 3 5 7 101 2 3 5 7 102 Collector Current IC (A) Rev.2.00 Jul 07, 2006 page 3 of 5 101 0 10 2 3 5 7 101 2 3 5 7 102 Gate Resistance RG (Ω) CT60AM-18F Gate-Emitter Voltage vs. Gate Charge Characteristic (Typical) Emitter Current vs. Emitter-Collector Voltage (Typical) 100 IC = 60A Tj = 25°C 16 600V 12 400V 8 4 0 0 50 TC = 25°C VGE = 0V Pulse Test VCE = 250V Emitter Current IE (A) Gate-Emitter Voltage VGE (V) 20 80 60 40 20 0 100 150 200 250 300 350 0 Gate-Emitter Threshold Voltage vs. Junction Temperature (Typical) 8 VGE = 0V IC = 6mA 7 6 5 4 3 2 1 0 –40 0 40 80 120 150 Transient Thermal Impedance Zth( j – c ) (°C/W) Junction Temperature Tj (°C) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 101 7 5 3 2 100 7 5 7 5 3 2 3 2 10 –1 7 5 7 5 3 2 3 2 10–2 10 –2 5 7 10-5 2 3 5 7 10-4 2 3 5 7 10-3 Pulse Width tw (S) Rev.2.00 Jul 07, 2006 page 4 of 5 2.4 3.2 IGBT Transient Thermal Impedance Characteristics 10-4 2 3 5 710-3 2 3 5 710-3 2 3 5 710-1 2 3 5 7100 100 7 5 3 2 2 10–1 10–1 7 7 5 5 3 3 2 2 10–2 10–2 5 710–52 3 5 7 10–4 Pulse Width tw (S) Diode Transient Thermal Impedance Characteristics 10–1 1.6 Emitter-Collector Voltage VEC (V) Transient Thermal Impedance Zth( j – c ) (°C/W) Gate-Emitter Threshold Voltage VGE(th) (V) Gate Charge Qg (nC) 0.8 CT60AM-18F Package Dimensions Package Name TO-3PL* JEITA Package Code Previous Code RENESAS Code PRSS0004ZC-A MASS[Typ.] 9.8g 20Max Unit: mm 5 6 2 2.5 1 26 φ3.2 20.6Min 2 1 0.5 5.45 5.45 3 4.0 Ordering Information Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 25 Type name Lead form Plastic Magazine (Tube) 25 Type name – Lead forming code Note: Please confirm the specification about the shipping in detail. Rev.2.00 Jul 07, 2006 page 5 of 5 Standard order code example CT60AM-18F CT60AM-18F-AD Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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