CY7C1062AV25 512K x 32 Static RAM Features Functional Description • High speed The CY7C1062AV25 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. — tAA = 10 ns Writing to the device is accomplished by enabling the chip (CE1, CE2 and CE3 LOW) and forcing the Write Enable (WE) input LOW. If Byte Enable A (BA) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A18). If Byte Enable B (BB) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18). Likewise, BC and BD correspond with the I/O pins I/O16 to I/O23 and I/O24 to I/O31, respectively. • Low active power — 745 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2, and CE3 features Reading from the device is accomplished by enabling the chip (CE1, CE2, and CE3 LOW) while forcing the Output Enable (OE) LOW and Write Enable (WE) HIGH. If the first Byte Enable (BA) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte Enable B (BB) is LOW, then data from memory will appear on I/O8 to I/O15. Similarly, Bc and BD correspond to the third and fourth bytes. See the truth table at the back of this data sheet for a complete description of read and write modes. • Available in non Pb-free 119-ball pitch ball grid array package The input/output pins (I/O0 through I/O31) are placed in a high-impedance state when the device is deselected (CE1, CE2or CE3 HIGH), the outputs are disabled (OE HIGH), the byte selects are disabled (BA-D HIGH), or during a write operation (CE1, CE2, and CE3 LOW, and WE LOW). The CY7C1062AV25 is available in a 119-ball pitch ball grid array (PBGA) package. WE CE1 CE2 CE3 OE BA BB BC BD OUTPUT BUFFERS 512K x 32 ARRAY SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 ROW DECODER INPUT BUFFERS CONTROL LOGIC Logic Block Diagram I/O0–I/O31 A 10 A 11 A 12 A 13 A 14 A 15 A 16 A 17 A 18 COLUMN DECODER Cypress Semiconductor Corporation Document #: 38-05333 Rev. *A • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised July 10, 2006 [+] Feedback CY7C1062AV25 Selection Guide –10 Maximum Access Time Unit 10 ns Maximum Operating Current Com’l/Ind’l 275 mA Maximum CMOS Standby Current Com’l/Ind’l 50 mA Pin Configuration 119-ball PBGA (Top View) 1 2 3 4 5 6 7 A I/O16 A A A A A I/O0 B C D E F G H J K L M N P I/O17 I/O18 I/O19 A Bc VDD A CE2 VSS CE1 NC VSS A CE3 VSS A Ba VDD I/O1 I/O2 I/O3 I/O20 VSS VDD VSS VDD VSS I/O4 I/O21 VDD VSS VSS VSS VDD I/O5 I/O22 VSS VDD VSS VDD VSS I/O6 I/O23 NC VDD VSS VSS VDD VSS VSS VSS VDD VDD VSS I/O7 DNU I/O24 I/O25 VDD VSS VSS VDD VSS VSS VSS VDD VDD VSS I/O8 I/O9 I/O10 R T U Document #: 38-05333 Rev. *A I/O26 VDD VSS VSS VSS VDD I/O27 VSS VDD VSS VDD VSS I/O11 I/O28 VDD VSS VSS VSS VDD I/O12 I/O29 A Bd NC Bb A I/O13 I/O30 A A WE A A I/O14 I/O31 A A OE A A I/O15 Page 2 of 9 [+] Feedback CY7C1062AV25 Maximum Ratings Current into Outputs (LOW)......................................... 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Static Discharge Voltage............................................ >2001V (per MIL-STD-883, Method 3015) Storage Temperature ................................. –65°C to +150°C Latch-up Current...................................................... >200 mA Ambient Temperature with Power Applied............................................. –55°C to +125°C Operating Range Supply Voltage on VCC Relative to GND [1] DC Voltage Applied to Outputs in High-Z State[1] ....................................–0.5V to VCC + 0.5V .... –0.5V to +3.6V Range Ambient Temperature VCC Commercial 0°C to +70°C 2.5V ± 0.2V DC Input Voltage[1] .................................–0.5V to VCC + 0.5V Industrial –40°C to +85°C DC Electrical Characteristics Over the Operating Range –10 Parameter Description Test Conditions VOH Output HIGH Voltage VCC = Min., IOH = –1.0 mA VOL Output LOW Voltage VCC = Min., IOL = 1.0 mA Min. Max. Unit 2.0 V 0.4 V VIH Input HIGH Voltage 2.0 VCC + 0.3 V VIL Input LOW Voltage[1] –0.3 0.8 V IIX Input Leakage Current GND < VI < VCC –1 +1 µA IOZ Output Leakage Current GND < VOUT < VCC, Output Disabled –1 +1 µA ICC VCC Operating Supply Current VCC = Max., f = fMAX = 1/tRC Com’l/Ind’l 275 mA ISB1 Automatic CE Power-down Current—TTL Inputs Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX Com’l/Ind’l 100 mA ISB2 Automatic CE Power-down Current —CMOS Inputs Max. VCC, CE > VCC – 0.2V, Com’l/Ind’l VIN > VCC – 0.2V, or VIN < 0.2V, f = 0 50 mA Capacitance[2] Parameter Description CIN Input Capacitance COUT I/O Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 2.5V Max. Unit 8 pF 10 pF AC Test Loads and Waveforms[3] 50Ω VTH = VDD/2 OUTPUT Z0 = 50Ω (a) 2.5V Including OUTPUT Jig and Scope 30 pF Including all Components R1 317Ω of Test Equipment 5 pF (b) R2 351Ω ALL INPUT PULSES 2.3V 90% 90% 10% 10% GND Fall time: > 1 V/ns Rise time > 1 V/ns THÉVENIN EQUIVALENT 167Ω OUTPUT 1.73V (c) Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. Tested initially and after any design or process changes that may affect these parameters. 3. Valid SRAM operation does not occur until the power supplies have reached the minimum operating VDD (2.3V). As soon as 1ms (Tpower) after reaching the minimum operating VDD, normal SRAM operation can begin including reduction in VDD to the data retention (VCCDR, 1.5V) voltage. Document #: 38-05333 Rev. *A Page 3 of 9 [+] Feedback CY7C1062AV25 AC Switching Characteristics Over the Operating Range[4] –10 Parameter Description Min. Max. Unit Read Cycle tpower VCC (typical) to the first access[5] 1 ms tRC Read Cycle Time 10 ns tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE1, CE2, or CE3 LOW to Data Valid 10 ns tDOE OE LOW to Data Valid 5 ns tLZOE OE LOW to Low-Z 10 [6] OE HIGH to High-Z tLZCE CE1, CE2, or CE3 LOW to Low-Z[6] CE1, CE2, or CE3 HIGH to CE1, CE2, or CE3 LOW to Power-up[7] tPD CE1, CE2, or CE3 HIGH to Power-down[7] tDBE Byte Enable to Data Valid tPU tLZBE tHZBE Byte Enable to Low-Z[6] Byte Disable to High-Z[6] ns 5 High-Z[6] tHZCE ns 1 [6] tHZOE Write 3 ns 3 ns ns 5 0 ns ns 10 ns 5 ns 1 ns 5 ns Cycle[8, 9] tWC Write Cycle Time 10 ns tSCE CE1, CE2, or CE3 LOW to Write End 7 ns tAW Address Set-up to Write End 7 ns tHA Address Hold from Write End 0 ns tSA Address Set-up to Write Start 0 ns tPWE WE Pulse Width 7 ns tSD Data Set-up to Write End 5.5 ns tHD Data Hold from Write End 0 ns tLZWE WE HIGH to Low-Z[6] 3 ns tHZWE WE LOW to High-Z [6] tBW Byte Enable to End of Write 5 7 ns ns Notes: 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.1V, input pulse levels of 0 to 2.3V, and output loading of the specified IOL/IOH and transmission line loads. Test conditions for the read cycle use output loading as shown in (a) of AC Test Loads, unless specified otherwise. 5. This part has a voltage regulator that steps down the voltage from 2.3V to 2V internally. tpower time has to be provided initially before a read/write operation is started. 6. tHZOE, tHZCE, tHZWE, tHZBE, and tLZOE, tLZCE, tLZWE, and tLZBE are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 7. These parameters are guaranteed by design and are not tested. 8. The internal write time of the memory is defined by the overlap of CE1 LOW, CE 2 HIGH, CE3 LOW, and WE LOW. The chip enables must be active and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 9. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 38-05333 Rev. *A Page 4 of 9 [+] Feedback CY7C1062AV25 Data Retention Waveform DATA RETENTION MODE 2.3V VCC 2.3V VDR > 1.5V tR tCDR CE Switching Waveforms Read Cycle No. 1[11,12] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[11,13] ADDRESS tRC CE1, CE3 CE2 tACE OE tHZOE tDOE tLZOE BA, BB, BC , BD tHZCE tDBE tLZBE DATA OUT HIGH IMPEDANCE tHZBE DATA VALID tLZCE VCC SUPPLY CURRENT HIGH IMPEDANCE tPD tPU 50% IICC CC 50% ISB Notes: 10. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 100 µs or stable at VCC(min.) > 100 µs 11. Device is continuously selected. OE, CE, BA, BB, BC, BD= VIL. 12. WE is HIGH for read cycle. 13. Address valid prior to or coincident with CE transition LOW. Document #: 38-05333 Rev. *A Page 5 of 9 [+] Feedback CY7C1062AV25 Switching Waveforms Write Cycle No. 1 (CE Controlled)[14,15,16] tWC ADDRESS CE tSA tSCE tAW tHA tPWE WE tBW BA, BB, BC , BD tSD tHD DATAI/O Write Cycle No. 2 (BLE or BHE Controlled)[14,15,16] tWC ADDRESS tSA tBW BA, BB, BC , BD tAW tHA tPWE WE tSCE CE tSD tHD DATAI/O Notes: 14. CE indicates a combination of all three chip enables. When ACTIVE LOW, CE indicates the CE1, CE2 and CE3 are LOW. 15. Data I/O is high-impedance if OE or BA, BB, BC, BD = VIH. 16. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05333 Rev. *A Page 6 of 9 [+] Feedback CY7C1062AV25 Switching Waveforms Write Cycle No. 3 (WE Controlled, OE LOW) tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BA, BB, BC, BD tHZWE tSD tHD DATA I/O tLZWE Truth Table CE1 CE2 CE3 I/O0– I/O7 I/O8– I/O15 I/O16– I/O23 I/O24– I/O31 OE WE BA BB Bc BD X X X X X High-Z High-Z High-Z High-Z Power Down Mode (ISB) Power H H H X L H L X X X X X X High-Z High-Z High-Z High-Z Power Down (ISB) L L L L H L L L L Data Out Data Out Data Out Data Out Read All Bits (ICC) L L L L H L H H H Data Out High-Z High-Z High-Z Read Byte A Bits Only (ICC) L L L L H H L H H High-Z Data Out High-Z High-Z Read Byte B Bits Only (ICC) L L L L H H H L H High-Z High-Z Data Out High-Z Read Byte C Bits Only (ICC) L L L L H H H H L High-Z High-Z High-Z Data Out Read Byte D Bits Only (ICC) L L L X L L L L L Data In Data In Data In Data In Write All Bits (ICC) L L L X L L H H H Data In High-Z High-Z High-Z Write Byte A Bits Only (ICC) L L L X L H L H H High-Z Data In High-Z High-Z Write Byte B Bits Only (ICC) L L L X L H H L H High-Z High-Z Data In High-Z Write Byte C Bits Only (ICC) L L L X L H H H L High-Z High-Z High-Z Data In Write Byte D Bits Only (ICC) L L L H H X X X X High-Z High-Z High-Z High-Z Selected, Outputs Disabled (ICC) Document #: 38-05333 Rev. *A Page 7 of 9 [+] Feedback CY7C1062AV25 Ordering Information Speed (ns) 10 Ordering Code CY7C1062AV25-10BGC CY7C1062AV25-10BGI Package Diagram 51-85115 Operating Range Commercial Industrial Package Type 119-ball Plastic Ball Grid Array (14 x 22 x 2.4 mm) Package Diagram 119-ball PBGA (14 x 22 x 2.4 mm) (51-85115) 51-85115-*B All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05333 Rev. *A Page 8 of 9 [+] Feedback CY7C1062AV25 Document History Page Document Title: CY7C1062AV25 512K x 32 Static RAM Document Number: 38-05333 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 119626 01/29/03 DFP New Data Sheet *A 493565 See ECN NXR Converted from Preliminary to Final Removed -8 and -10 speed bins Changed the description of IIX from Input Load Current to Input Leakage Current in DC Electrical Characteristics table Updated the ordering information table Document #: 38-05333 Rev. *A Page 9 of 9 [+] Feedback