TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL B H C G 2 3 1 D A E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS DQ PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 0.13 MAX 0.13 Inches 0.645 0.060 45° 0.250 0.130 0.560 0.05 x 45° 0.060 0.250 0.005 0.085 0.060 0.200 0.744 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 0.005 MAX 0.005 • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 35W 65V ±20V 1A –65 to 150°C 200°C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.01/01 D2003UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current V VGS = 0 ID = 10mA VDS = 28V VGS = 0 1 mA 1 mA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS gfs Forward Transconductance* VDS = 10V ID = 1A 65 1 0.18 S 13 dB 40 % 20:1 — TOTAL DEVICE GPS h VSWR Common Source Power Gain PO = 5W Drain Efficiency VDS = 28V Load Mismatch Tolerance f = 1GHz IDQ = 0.2A PER SIDE Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 12 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 6 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 0.5 pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 5.0°C / W Prelim.01/01 D2003UK 3RXW : 9GV 9 ,GT $ I *+] 3LQ: 3RXW G% : *DLQ 9GV 9 ,GT $ I *+] 3LQ: 3RXW *DLQ Figure 1 Output Power and Gain vs. Input power 'UDLQ(IILFLHQF\ 3RXW 'UDLQ(IILFLHQF\ Figure 2 Output Power and Efficiency vs. Input Power OPTIMUM SOURCE AND LOAD IMPEDANCE ,0' G%F I 0+] I 0+] 9GV 9 3RXW:3(3 Frequency MHz ZS ZL 1000MHZ 1.1 - j2.5 5.1 - j17.1 W W ,GT $ ,GT $ Figure 3 IMD Vs. Output Power. Typical S Parameters ! Vds=28V, Idq=0.1A # MHZ S MA R 50 Semelab plc. !Freq !MHz S11 mag ang S21 mag ang S12 mag ang S22 mag ang 70 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.97 0.94 0.88 0.84 0.82 0.79 0.78 0.77 0.77 0.77 0.78 0.78 0.78 0.79 0.79 0.78 0.78 0.79 0.78 0.79 -36.4 -48.0 -65.3 -78.5 -88.4 -97.1 -105.5 -113.3 -121.8 -128.9 -136.7 -144.0 -150.8 -156.7 -160.9 -164.2 -166.3 -168.5 -170.3 -172.5 15.8 14.1 12.3 10.2 8.8 7.7 6.9 6.0 5.4 4.9 4.6 4.4 4.0 3.7 3.4 3.0 2.7 2.6 2.5 2.4 156.6 146.3 129.9 114.7 106.0 98.3 88.5 84.5 77.8 75.3 68.3 65.4 57.2 52.3 46.7 41.4 39.5 38.4 36.8 33.0 0.017 0.021 0.027 0.029 0.029 0.029 0.028 0.026 0.024 0.022 0.020 0.020 0.020 0.022 0.025 0.028 0.032 0.036 0.044 0.053 67.2 58.1 45.5 34.8 28.1 27.3 22.2 24.2 23.3 29.6 35.0 46.6 57.6 68.5 76.6 81.6 87.8 92.3 97.4 97.4 0.91 0.88 0.81 0.77 0.75 0.73 0.72 0.71 0.70 0.70 0.70 0.70 0.70 0.71 0.70 0.69 0.68 0.68 0.70 0.70 -23.2 -30.1 -40.3 -48.1 -54.2 -59.1 -64.3 -69.3 -75.2 -80.4 -86.5 -93.6 -99.6 -105.8 -111.3 -115.6 -117.0 -119.3 -121.0 -124.2 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.01/01 D2003UK 1 0 + 2 8 V G a te - B ia s 6 .8 K L 3 1 K 2 1 0 0 n F 1 K 2 1 n F 1 K 2 L 1 T 1 1 T 2 T 1 3 0 p F T 3 3 0 p F T 6 3 .6 p F 1 0 0 u F L 2 T 1 2 T 1 3 D 2 0 0 3 U K 3 0 p F 1 -1 0 p F 1 -1 0 p F T 5 T 4 1 0 n F 9 .1 p F T 1 7 1 -1 0 p F 3 .6 p F 3 0 p F T 7 T 8 T 9 T 1 0 D 2 0 0 3 U K T 1 4 T 1 5 T 1 6 1000MHz TEST FIXTURE Substrate 0.8mm thick PTFE/glass All microstrip lines W = 2.7mm T1 T2, T17 T3, T7 T4, T8 T5, T9 T6, T10 T11,T14 T12,T15 T13,T16 15.7 45mm 50 OHM UT 34 semi-rigid coax 7mm 15mm 7.6mm 8mm 8mm 11.2mm 7mm L1, L2 L3 6 turns 24swg enamelled copper wire, 3mm i.d. 1.5 turn 24swg enamelled copper wire on Siemens B62152-A7X 2 hole core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.01/01