DG858DW45 DG858DW45 Gate Turn-Off Thyristor Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000 FEATURES KEY PARAMETERS 3000A ITCM 4500V VDRM 1100A IT(AV) 750V/µs dVD/dt 300A/µs dIT/dt ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability ● Fault Protection Without Fuses ● High Surge Current Capability ● Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS ● Variable speed A.C. motor drive inverters (VSD-AC). ● Uninterruptable Power Supplies ● High Voltage Converters. ● Choppers. ● Welding. ● Induction Heating. ● DC/DC Converters. Package outline type code : W See Package Details for further information. Fig.1 Package outline VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM V Repetitive Peak Reverse Voltage VRRM V Conditions 4500 16 Tvj = 125oC, IDRM =100mA, IRRM = 50mA DG858DW45 CURRENT RATINGS Symbol ITCM Parameter Conditions o Repetitive peak controllable on-state current VD = VDRM, Tj = 125 C, diGQ/dt = 40A/µs, Cs = 4.0µF, LS ≤ 200nH Max. Units 3000 A IT(AV) Mean on-state current THS = 80oC. Double side cooled, half sine 50Hz. 1100 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled, half sine 50Hz. 1720 A 1/7 DG858DW45 SURGE RATINGS Symbol ITSM I2t diT/dt dVD/dt LS Parameter Conditions Max. Units 20.0 kA 2.0 x 106 A 2s 300 A/µs To 66% VDRM; RGK ≤ 22Ω, Tj = 125oC 20 V/µs To 66% VDRM; VRG = -2V, Tj = 125oC 750 V/µs IT = 3000A, VD = VDRM, Tj = 125˚C, diGQ/dt = 40A/µs, Cs = 4.0µF 200 nH Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC I2t for fusing 10ms half sine. Tj =125oC Critical rate of rise of on-state current VD = 3000V, IT = 3000A, Tj =125oC IFG > 40A, Rise time < 1.0µs Rate of rise of off-state voltage Peak stray inductance in snubber circuit GATE RATINGS Symbol Parameter Conditions Min. Max. Units This value maybe exceeded during turn-off - 16 V 20 100 A Average forward gate power - 20 W Peak reverse gate power - 24 kW VRGM Peak reverse gate voltage IFGM Peak forward gate current PFG(AV) PRGM diGQ/dt Rate of rise of reverse gate current 20 60 A/µs tON(min) Minimum permissable on time 50 - µs tOFF(min) Minimum permissable off time 100 - µs Min. Max. Units Double side cooled - 0.011 o C/W Anode side cooled - 0.017 o C/W Cathode side cooled - 0.03 o C/W - 0.0021 o C/W THERMAL AND MECHANICAL DATA Symbol Rth(j-hs) DC thermal resistance - junction to heatsink surface Conditions Clamping force 40kN With mounting compound per contact Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature -40 125 o C Operating junction/storage temperature range -40 125 o C Clamping force 36.0 44.0 kN TOP/Tstg 2/7 Parameter DG858DW45 CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 3000A peak, IG(ON) = 10A d.c. - 3.85 V IDM Peak off-state current VDRM = 4500V, VRG = 2V - 100 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1.2 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 4.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 2000V - 4400 mJ td Delay time IT = 3000A, dIT/dt = 300A/µs - 2.0 µs tr Rise time IFG = 40A, rise time < 1.0µs - 6.0 µs Turn-off energy - 12500 mJ tgs Storage time - 26 µs tgf Fall time IT = 3000A, VDM = 4200V - 2.5 µs tgq Gate controlled turn-off time Snubber Cap Cs = 4.0µF, - 28.5 µs QGQ Turn-off gate charge diGQ/dt = 40/µs - 12500 µC QGQT Total turn-off gate charge - 25000 µC IGQM Peak reverse gate current - 950 A EOFF RELIABILITY Conditions DC blocking reliability Vdc = 3500V, Tj = -40 to + 125˚C, ambient cosmic radiation at sea level, in open air, 100% duty cycle. Limit Units 100 FIT 3/7 DG858DW45 CURVES 4000 Instantaneous on-state current IT - (A) Measured under pulse conditions. IG(ON) = 10A Half sine wave 10ms 3000 2000 Tj = 125˚C 1000 Tj = 25˚C 0 1.0 1.5 2.0 2.5 3.0 Instantaneous on-state voltage VTM - (V) Figure 2. On-state characteristics 4/7 3.5 4.0 Anode voltage and current DG858DW45 0.9VD 0.9IT dVD/dt VD VD IT 0.1VD td VDM ITAIL VDP tgs tr tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 3000A IFG = 40A IG(ON) = 10A d.c. tw1(min) = 20µs IGQM = 1200A diGQ/dt = 40A/µs QGQ = 12500µC VRG(min) = 2V VRG(max) = 18V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Figure 3. General switching waveforms 5/7 DG858DW45 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (One in each electrode) 12˚ Auxiliary cathode connector Ø3.0 Gate connector Ø3.0 Anode 27.0 25.5 Ø120 max Ø84.6 nom Ø84.6 nom 72 max Cathode Nominal weight: 1700g Package outline type code: W 6/7 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. 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