DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • SOT-323 Drain D Gate Gate Protection Diode TOP VIEW ESD PROTECTED TO 2kV Maximum Ratings G Source S TOP VIEW Pin Out Configuration EQUIVALENT CIRCUIT @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Pulsed (Note 3) Drain Current (Note 1) Thermal Characteristics ID Value 60 ±20 300 800 Units V V Value 200 625 -65 to +150 Units mW °C/W °C mA @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Symbol PD RθJA TJ, TSTG @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 ±10 V μA μA VGS = 0V, ID = 10μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS(ON) 2.5 2.0 3.0 Ω |Yfs| 1.6 ⎯ ⎯ ⎯ V Static Drain-Source On-Resistance 1.0 ⎯ ⎯ 80 ⎯ ms VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 0.2A VDS = 10V, ID = 0.2A Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 25 5.0 pF pF pF Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN601WK Document number: DS30653 Rev. 4 - 2 1 of 5 www.diodes.com April 2009 © Diodes Incorporated ID , DRAIN CURRENT (A) DMN601WK 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 1.5 1 0.5 1 0.1 0 -50 -25 75 100 125 150 0 25 50 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN601WK Document number: DS30653 Rev. 4 - 2 0 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 2 of 5 www.diodes.com April 2009 © Diodes Incorporated DMN601WK RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) IDR, REVERSE DRAIN CURRENT (A) VGS = 0V Pulsed TA = 125°C TA = 150°C TA = 85°C TA = 25°C TA = 0°C TA = -25° C TA = -55°C 0 IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) Tch, CHANNEL TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature 1 Ordering Information (Note 6) Part Number DMN601WK-7 Notes: 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current Case SOT-323 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. K7K Date Code Key Year Code Month Code 2005 S Jan 1 DMN601WK Document number: DS30653 Rev. 4 - 2 2006 T Feb 2 Mar 3 YM Marking Information DM = Product Type Marking Code YM = Date Code Marking Y = Year (ex: S = 2005) M = Month (ex: 9 = September) 2007 U Apr 4 2008 V May 5 Jun 6 3 of 5 www.diodes.com 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O 2012 Z Nov N Dec D April 2009 © Diodes Incorporated DMN601WK Package Outline Dimensions A SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K M J L D Suggested Pad Layout Y Z C X DMN601WK Document number: DS30653 Rev. 4 - 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 4 of 5 www.diodes.com April 2009 © Diodes Incorporated DMN601WK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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